Toshiba Corporation- IGBTs

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality and reliability makes it a trusted partner for global electronics manufacturers.

IGBTs - 型号列表

1,304 parts in total

Mfr Part #	Quantity Available	Price	Mounting Type	Standard Package	Vgs (Max)	Package / Case	Channel Type	Operating Temperature	Fall Time (Typ)	Voltage - Breakdown	Rds On (Max) @ Id, Vgs	Propagation Delay (Max)	Current - Peak Pulse (10/1000us)	RoHS	FET Type	FET Feature	Power - Max	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Packaging	Supplier Device Package	Configuration	Current - Collector Cutoff (Max)	Voltage - Supply	Voltage - Gate Trigger (Vgt) (Max)	Height	Length	Number of Pins	Package Quantity	Function	Voltage - Input (Min)	Product Category	Factory Pack Quantity	Fall Time	Power - Rated	Output Function	Rise Time (Typ)	Transistor Type	Number of Channels	Number of Elements	Resistance - Input	Power - Average Forward	Power Dissipation (Max)	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Current - Drain (Idss) @ Vds (Vgs=0)	Width	Mounting Style	Package Cooled	Size / Dimension	Number of Positions	Series	Technology	Manufacturer	Card Standard
2SK2398 Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-3PN toshiba	-		Through Hole	Rail / Tube	±20 V	3TO-3PN	Enhancement	-55 to 150 °C	40 ns	60 V	30@10V mOhm	20 ns	45 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3068TE24L Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FL/SM T/R toshiba	-		Through Hole	Tape & Reel	±30 V	3TO-220FL/SM	Enhancement	-55 to 150 °C	36 ns	500 V	520@10V mOhm	22 ns	12 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2776TE24L Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220FL T/R toshiba	-		Through Hole	Tape & Reel	±30 V	3TO-220FL	Enhancement	-55 to 150 °C	40 ns	500 V	850@10V mOhm	26 ns	8 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2611T Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN toshiba	-		Through Hole	Rail / Tube	±30 V	3TO-3PN	Enhancement	-55 to 150 °C	20 ns	900 V	1400@10V mOhm	25 ns	9 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2847 Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P(N)IS toshiba	-		Through Hole	Rail / Tube	±30 V	3TO-3P(N)IS	Enhancement	-55 to 150 °C	20 ns	900 V	1400@10V mOhm	25 ns	8 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2917 Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-3P toshiba	-		Through Hole	Rail / Tube	±30 V	3TO-3P	Enhancement	-55 to 150 °C	50 ns	500 V	270@10V mOhm	30 ns	18 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA6006-H(TE12LQM TPCA6006-H(TE12LQ, MALAYSIA toshiba	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ360(TE12R,F) Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R toshiba	-		Surface Mount	Tape & Reel	±20 V	4PW-Mini	P	-55 to 150 °C	20 ns	60 V	730@10V mOhm	17 ns	1 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ438(Q) Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) TO-220NIS toshiba	583	50: ¥6.95	Through Hole	Rail / Tube	±20 V	3TO-220NIS	P	-55 to 150 °C	55 ns	60 V	190@10V mOhm	25 ns	5 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SJ537(Q) Trans MOSFET P-CH 50V 5A 3-Pin TO-92 Mod toshiba	-		Through Hole	Bulk	±20 V	3TO-92 Mod	P	-55 to 150 °C	20 ns	50 V	190@10V mOhm	25 ns	5 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2173(F) Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-3PN toshiba	10	100: ¥19.8098	Through Hole	Rail / Tube	±20 V	3TO-3PN	Enhancement	-55 to 150 °C	60 ns	60 V	17@10V mOhm	25 ns	50 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2233(F) Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-3P(N) toshiba	-		Through Hole	Rail / Tube	±20 V	3TO-3P(N)	Enhancement	-55 to 150 °C	40 ns	60 V	30@10V mOhm	20 ns	45 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3128(Q) Trans MOSFET N-CH 30V 60A 3-Pin(3+Tab) TO-3PN MOSFET N-CH 30V 60A TO-3PN toshiba	10	50: ¥16.83	Through Hole	Bulk	±20 V	3TO-3PN	Enhancement	-55 to 150 °C	75 ns	30 V	12@10V mOhm	12 ns	60 A	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	150W	3V @ 1mA	66nC @ 10V	30V	2300pF @ 10V	60A (Ta)	Tube	TO-3P(N)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 2SK3176(F) Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-3PN MOSFET N-CH 200V 30A TO-3PN 2SK3176(F), N-channel MOSFET Transistor 30A 200V, 3-Pin TO-3PN MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm Toshiba , N沟道 MOSFET, 30 A, Vds=200 V, 3针 TO-3PN封装 toshiba	11	1: ¥24.49	Through Hole	Bulk	±20 V	3TO-3PN	Enhancement	-55 to 150 °C	25 ns	200 V	52@10V mOhm	15 ns	30 A	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Logic Level Gate	150W	3.5V @ 1mA	125nC @ 10V	200V	5400pF @ 10V	30A (Ta)	Tube	TO-3P(N)	Single	-	200 V	+/- 20 V	19mm	15.9mm	3	TO-3PN	Y	-	MOSFET	50	25 ns	150 W	增强	15 ns	N-Channel	1 Channel	1	0.052 Ω	150 W	150 W	200 V	0.052 Ω	30 A	4.8mm	Through Hole	TO-3PN	15.9 x 4.8 x 19mm	3	2SK3176	Si	Toshiba	Power MOSFET
4 2SK3767(Q,M) Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220SIS MOSFET N-CH 600V 2A TO-220SIS toshiba	10	500: ¥3.9508	Through Hole	Bulk	±30 V	3TO-220SIS	Enhancement	-55 to 150 °C	20 ns	600 V	4500@10V mOhm	15 ns	2 A	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	25W	4V @ 1mA	9nC @ 10V	600V	320pF @ 10V	2A (Ta)	Tube	TO-220SIS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3798(Q,M) Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220NIS MOSFET N-CH 900V 4A TO220SIS toshiba	10	50: ¥12.9404	Through Hole	Rail / Tube	±30 V	3TO-220NIS	Enhancement	-55 to 150 °C	45 ns	900 V	3500@10V mOhm	20 ns	4 A	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	Standard	40W	4V @ 1mA	26nC @ 10V	900V	800pF @ 25V	4A (Ta)	Bulk	TO-220SIS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK1359 Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-3PN toshiba	-		Through Hole	Rail / Tube	±30 V	3TO-3PN	Enhancement	-55 to 150 °C	12 ns	1000 V	3800@10V mOhm	18 ns	5 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT50J301(Q) Trans IGBT Chip N-CH 600V 50A 3-Pin TO-3P(LH) Toshiba , N沟道 IGBT, 50 A, Vce=600 V, 3针 TO-3PLH封装 toshiba	816	50: ¥62.00	通孔	-	-	-	N	+150 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50 A	600 V	±20V	26mm	20.5mm	3	TO-3PLH	Y	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT30J322(Q) Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3P(N)IS toshiba	22	1: ¥38.30	Through Hole	Rail / Tube	±20 V	3TO-3P(N)IS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single	30 A	-	-	-	-	-	-	-	600 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GT5G103(Q) Trans IGBT Chip N-CH 400V 5A 3-Pin(2+Tab) Case DP toshiba	-		Surface Mount	Bulk	±6 V	3Case DP	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Single	5 A	-	-	-	-	-	-	-	400 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

Page 1 / 50

Toshiba Corporation- IGBTs

IGBTs - 型号列表

Rds On (Max) @ Id, Vgs

Current - Peak Pulse (10/1000us)

Package / Case

Fall Time (Typ)

Propagation Delay (Max)

Voltage - Breakdown

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC

Standard Package

Vgs (Max)

Mounting Type

Channel Type

Power - Max

Vgs(th) (Max) @ Id

Current - Collector Cutoff (Max)

Operating Temperature

FET Feature

Packaging

Supplier Device Package

Voltage - Supply

Voltage - Gate Trigger (Vgt) (Max)

Height

Length

Package Quantity

Voltage - Input (Min)