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GA05JT transistor Series

High-voltage silicon carbide transistors for robust electronic applications

The GA05JT transistor series from GeneSiC Semiconductor is designed for high-voltage applications, leveraging silicon carbide (SiC) technology to offer superior performance and reliability. These transistors are ideal for power electronics systems where voltage tolerance and switching speed are critical. If you're working on electric vehicles, renewable energy inverters, or industrial motor drives, these transistors could be a game-changer due to their ability to handle high voltages efficiently.

One thing worth noting is that the GA05JT transistors exhibit excellent thermal stability, which is crucial in high-power circuits where heat management can be challenging. Engineers tend to reach for this when they need a reliable solution that can operate under harsh conditions without degrading quickly. Another practical benefit is their fast switching speeds, which help in reducing switching losses and improving overall system efficiency. This makes them particularly suitable for applications requiring frequent on/off cycles.

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Frequently Asked Questions

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GA05JT transistor - Part List

6 parts in total

Standard Package

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25degC

Packaging

Operating Temperature

RoHS

Transistor Type

Power Dissipation (Max)

Package / Case

Vce(on) (Max) @ Vge, Ic

Mfr Part #Quantity AvailablePriceCategoryRoHSTransistor TypeCurrent - Continuous Drain (Id) @ 25degCPackagingOperating TemperatureStandard PackageSeriesDrain to Source Voltage (Vdss)Package / CaseTariff NoPower Dissipation (Max)WeightNumber of PinsFactory Pack QuantityPower - Average ForwardVce(on) (Max) @ Vge, IcOn-State Resistance (Max)Mounting StyleManufacturerConfigurationOther NamesFET TypeFET FeaturePower - MaxRds On (Max) @ Id, VgsMounting TypeSupplier Device PackageVgs(th) (Max) @ IdFall TimeVgs (Max)Gate ChargeRise Time (Typ)Delay to 1st TapNumber of ChannelsTechnologyChannel Type
GA05JT12-SMB3L
GA05JT12-SMB3L

TRANS SJT 1.2KV 5A

GeneSiC Semiconductor

102500: ¥65.28-Lead free / RoHS Compliant----500*-------------1242-1173-1---------------
GA05JT12-247
2
GA05JT12-247

TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-247AB MOSFET 1200V 15A Standard

GeneSiC Semiconductor

101: ¥76.50--:JFET5A (Tc)*:175°30*1200V (1.2kV)*85412900:57W0:3--------Silicon Carbide, Normally OffSuper Junction57W280 mOhm @ 5A, 100mA**---------
GA05JT12-220ISO
GA05JT12-220ISO

TRANS SJT 5A 1.2KV

GeneSiC Semiconductor

0-------------------------------------
GA05JT12-263
2
GA05JT12-263

TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-263 MOSFET 1200V 15A Standard

GeneSiC Semiconductor

1011: ¥76.50-Lead free / RoHS Compliant:JFET:5A:Each:175°50*:1.2kV-85412900:58W0:3-----------------------
GA05JT01-46
GA05JT01-46

TRANS SJT 100V 9A JFET SiC High Temperature JT

GeneSiC Semiconductor

181: ¥374.884-RoHS CompliantN-Channel9 ABulk- 55 C--5.8 ATO-46-3----5020 W100 V620 mOhmsThrough HoleGeneSiC SemiconductorSingle-------30 V--------
GA05JT03-46
GA05JT03-46

TRANS SJT 300V 9A MOSFET SiC High Temperature JT

GeneSiC Semiconductor

441: ¥498.032-RoHS CompliantN-Channel9 ABulk+ 225 C---TO-46-3----5020 W300 V620 mOhmsThrough HoleGeneSiC SemiconductorSingle--------12.4 ns30 V14.6 nC6.6 ns12 ns1 ChannelSiCEnhancement
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