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GA05JT transistor Series
High-voltage silicon carbide transistors for robust electronic applications
The GA05JT transistor series from GeneSiC Semiconductor is designed for high-voltage applications, leveraging silicon carbide (SiC) technology to offer superior performance and reliability. These transistors are ideal for power electronics systems where voltage tolerance and switching speed are critical. If you're working on electric vehicles, renewable energy inverters, or industrial motor drives, these transistors could be a game-changer due to their ability to handle high voltages efficiently.
One thing worth noting is that the GA05JT transistors exhibit excellent thermal stability, which is crucial in high-power circuits where heat management can be challenging. Engineers tend to reach for this when they need a reliable solution that can operate under harsh conditions without degrading quickly. Another practical benefit is their fast switching speeds, which help in reducing switching losses and improving overall system efficiency. This makes them particularly suitable for applications requiring frequent on/off cycles.
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GA05JT transistor - Part List
6 parts in total| Mfr Part # | Quantity Available | Price | Category | RoHS | Transistor Type | Current - Continuous Drain (Id) @ 25degC | Packaging | Operating Temperature | Standard Package | Series | Drain to Source Voltage (Vdss) | Package / Case | Tariff No | Power Dissipation (Max) | Weight | Number of Pins | Factory Pack Quantity | Power - Average Forward | Vce(on) (Max) @ Vge, Ic | On-State Resistance (Max) | Mounting Style | Manufacturer | Configuration | Other Names | FET Type | FET Feature | Power - Max | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Fall Time | Vgs (Max) | Gate Charge | Rise Time (Typ) | Delay to 1st Tap | Number of Channels | Technology | Channel Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 10 | 2500: ¥65.28 | - | Lead free / RoHS Compliant | - | - | - | - | 500 | * | - | - | - | - | - | - | - | - | - | - | - | - | - | 1242-1173-1 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
GA05JT12-247 TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-247AB MOSFET 1200V 15A Standard GeneSiC Semiconductor | 10 | 1: ¥76.50 | - | - | :JFET | 5A (Tc) | * | :175° | 30 | * | 1200V (1.2kV) | * | 85412900 | :57W | 0 | :3 | - | - | - | - | - | - | - | - | Silicon Carbide, Normally Off | Super Junction | 57W | 280 mOhm @ 5A, 100mA | * | * | - | - | - | - | - | - | - | - | - |
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
GA05JT12-263 TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-263 MOSFET 1200V 15A Standard GeneSiC Semiconductor | 101 | 1: ¥76.50 | - | Lead free / RoHS Compliant | :JFET | :5A | :Each | :175° | 50 | * | :1.2kV | - | 85412900 | :58W | 0 | :3 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 18 | 1: ¥374.884 | - | RoHS Compliant | N-Channel | 9 A | Bulk | - 55 C | - | - | 5.8 A | TO-46-3 | - | - | - | - | 50 | 20 W | 100 V | 620 mOhms | Through Hole | GeneSiC Semiconductor | Single | - | - | - | - | - | - | - | 30 V | - | - | - | - | - | - | - | - | |
| 44 | 1: ¥498.032 | - | RoHS Compliant | N-Channel | 9 A | Bulk | + 225 C | - | - | - | TO-46-3 | - | - | - | - | 50 | 20 W | 300 V | 620 mOhms | Through Hole | GeneSiC Semiconductor | Single | - | - | - | - | - | - | - | - | 12.4 ns | 30 V | 14.6 nC | 6.6 ns | 12 ns | 1 Channel | SiC | Enhancement |


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