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MAGX-001214 transistors rf Series

High-power GaN transistors and evaluation boards for RF applications

The MAGX-001214 series from M/A-COM is a high-power Gallium Nitride (GaN) transistor lineup designed specifically for RF applications. These transistors are typically used in scenarios requiring robust amplification and efficient power handling, such as in base stations, radar systems, and satellite communications equipment.

Engineers tend to reach for these transistors when they need to boost signals over long distances without significant loss in power or quality. The MAGX-001214 series is particularly useful in systems that require linear amplification and can benefit from the high efficiency and wide bandwidth offered by GaN technology. One thing worth noting is that these transistors come with evaluation boards, which makes it easier for designers to quickly test and integrate them into their designs. This feature speeds up the prototyping process and helps ensure compatibility and performance right from the start.

Another practical observation is that these transistors are often found in environments where thermal management is critical. Given the high power levels involved, effective cooling solutions are essential to maintain reliability and prevent thermal runaway. If you're working on projects involving high-power RF amplifiers, the MAGX-001214 series could be a solid choice due to its combination of performance and ease of use.

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MAGX-001214 transistors rf - Part List

8 parts in total

Other Names

Gain

Power - Output

Current - Output

Current Rating (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Frequency

Voltage - Test

Current Transfer Ratio (Min)

Mfr Part #Quantity AvailablePriceCategoryProductOther NamesStandard PackageRoHSGainFrequencyPower - OutputVoltage - TestVoltage RatingTransistor TypeCurrent - OutputCurrent Rating (Max)Current - Drain (Idss) @ Vds (Vgs=0)PackagingTypeCurrent Transfer Ratio (Min)Drain to Source Voltage (Vdss)Voltage - Gate Trigger (Vgt) (Max)Mounting StylePackage / CaseOperating TemperatureRad HardenedMounting TypeNumber of PositionsOperating Temperature - Junction
MAGX-001214-250L00
MAGX-001214-250L00

Transistors RF GaAs 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB TRANSISTOR,GAN,250W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB Trans JFET 8.8A GaN HEMT 3-Pin

M/A-COM Technology Solutions

1015: ¥4,318.00-RF JFET1465-10875RoHS Compliant17.6dB1.2GHz ~ 1.4GHz250W50V65VHEMT250mA9A8 ABulkGaN SiC HEMT5 S175 V- 8 VSMD/SMTCu/Mo/Cu flanged ceramic- 40 C to + 95 CNoScrew395C
MAGX-001214-125L00
MAGX-001214-125L00

Transistors RF GaAs 1.2-1.4GHz 50Volt 125W Pk Gain 18dB TRANSISTOR,GAN,125W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 125W Pk Gain 18dB

M/A-COM Technology Solutions

1019: ¥2,325.60-RF JFET1465-10865RoHS Compliant18.4dB*125W50V65VHEMT100mA4.8A3.9 ABulkGaN SiC HEMT2.5 S175 V- 8 VSMD/SMTCu/Mo/Cu flanged ceramic- 40 C to + 95 C----
MAGX-001214-500L00
MAGX-001214-500L00

TRANSISTOR,GAN,500W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB

M/A-Com Technology Solutions

221: ¥6,205.68-RF JFET1465-10885RoHS Compliant19.22dB1.2GHz ~ 1.4GHz500W42V65VHEMT400mA18.1A21.5 ABulkGaN SiC HEMT----------
MAGX-001214-500L0S
MAGX-001214-500L0S

TRANSISTOR,GAN,500W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB

M/A-Com Technology Solutions

251: ¥6,205.68-RF JFET1465-10895RoHS Compliant19.22dB1.2GHz ~ 1.4GHz500W50V65VHEMT400mA18.1A21.5 ABulkGaN SiC HEMT----------
MAGX-001214-650L00
MAGX-001214-650L00

TRANSISTOR GAN 650W 1.2-1.4GHZ

M/A-Com Technology Solutions

0--------------------------
MAGX-001214-SB0PPR
MAGX-001214-SB0PPR

EVAL BOARD FOR MAGX-001214-125L0

M/A-Com Technology Solutions

101: ¥12,240.00--------------------------
MAGX-001214-SB1PPR
MAGX-001214-SB1PPR

EVAL BOARD FOR MAGX-001214-250L0

M/A-Com Technology Solutions

101: ¥12,240.00--------------------------
MAGX-001214-SB3PPR
MAGX-001214-SB3PPR

EVAL BOARD FOR MAGX-001214-500L0

M/A-Com Technology Solutions

101: ¥12,240.00--------------------------
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