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MAGX-001214 transistors rf Series
High-power GaN transistors and evaluation boards for RF applications
The MAGX-001214 series from M/A-COM is a high-power Gallium Nitride (GaN) transistor lineup designed specifically for RF applications. These transistors are typically used in scenarios requiring robust amplification and efficient power handling, such as in base stations, radar systems, and satellite communications equipment.
Engineers tend to reach for these transistors when they need to boost signals over long distances without significant loss in power or quality. The MAGX-001214 series is particularly useful in systems that require linear amplification and can benefit from the high efficiency and wide bandwidth offered by GaN technology. One thing worth noting is that these transistors come with evaluation boards, which makes it easier for designers to quickly test and integrate them into their designs. This feature speeds up the prototyping process and helps ensure compatibility and performance right from the start.
Another practical observation is that these transistors are often found in environments where thermal management is critical. Given the high power levels involved, effective cooling solutions are essential to maintain reliability and prevent thermal runaway. If you're working on projects involving high-power RF amplifiers, the MAGX-001214 series could be a solid choice due to its combination of performance and ease of use.
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MAGX-001214 transistors rf - Part List
8 parts in total| Mfr Part # | Quantity Available | Price | Category | Product | Other Names | Standard Package | RoHS | Gain | Frequency | Power - Output | Voltage - Test | Voltage Rating | Transistor Type | Current - Output | Current Rating (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Packaging | Type | Current Transfer Ratio (Min) | Drain to Source Voltage (Vdss) | Voltage - Gate Trigger (Vgt) (Max) | Mounting Style | Package / Case | Operating Temperature | Rad Hardened | Mounting Type | Number of Positions | Operating Temperature - Junction |
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MAGX-001214-250L00 Transistors RF GaAs 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB TRANSISTOR,GAN,250W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB Trans JFET 8.8A GaN HEMT 3-Pin M/A-COM Technology Solutions | 10 | 15: ¥4,318.00 | - | RF JFET | 1465-1087 | 5 | RoHS Compliant | 17.6dB | 1.2GHz ~ 1.4GHz | 250W | 50V | 65V | HEMT | 250mA | 9A | 8 A | Bulk | GaN SiC HEMT | 5 S | 175 V | - 8 V | SMD/SMT | Cu/Mo/Cu flanged ceramic | - 40 C to + 95 C | No | Screw | 3 | 95C |
MAGX-001214-125L00 Transistors RF GaAs 1.2-1.4GHz 50Volt 125W Pk Gain 18dB TRANSISTOR,GAN,125W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 125W Pk Gain 18dB M/A-COM Technology Solutions | 10 | 19: ¥2,325.60 | - | RF JFET | 1465-1086 | 5 | RoHS Compliant | 18.4dB | * | 125W | 50V | 65V | HEMT | 100mA | 4.8A | 3.9 A | Bulk | GaN SiC HEMT | 2.5 S | 175 V | - 8 V | SMD/SMT | Cu/Mo/Cu flanged ceramic | - 40 C to + 95 C | - | - | - | - |
MAGX-001214-500L00 TRANSISTOR,GAN,500W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB M/A-Com Technology Solutions | 22 | 1: ¥6,205.68 | - | RF JFET | 1465-1088 | 5 | RoHS Compliant | 19.22dB | 1.2GHz ~ 1.4GHz | 500W | 42V | 65V | HEMT | 400mA | 18.1A | 21.5 A | Bulk | GaN SiC HEMT | - | - | - | - | - | - | - | - | - | - |
MAGX-001214-500L0S TRANSISTOR,GAN,500W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB M/A-Com Technology Solutions | 25 | 1: ¥6,205.68 | - | RF JFET | 1465-1089 | 5 | RoHS Compliant | 19.22dB | 1.2GHz ~ 1.4GHz | 500W | 50V | 65V | HEMT | 400mA | 18.1A | 21.5 A | Bulk | GaN SiC HEMT | - | - | - | - | - | - | - | - | - | - |
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