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SKM100GB semiconductor Series
High-power IGBT modules for industrial and electronic applications
The SKM100GB series from Semikron is a lineup of high-power IGBT (Insulated Gate Bipolar Transistor) modules designed for industrial and electronic applications that require significant power handling. These modules are particularly useful in systems where high efficiency and reliability are paramount, such as in variable frequency drives, inverters, and power supplies.
If you're working on projects involving large-scale machinery or heavy-duty electrical systems, these IGBT modules are a go-to choice. They offer robust performance under harsh conditions, making them suitable for environments where temperature fluctuations and mechanical stress are common. One thing worth noting is their compact design, which allows for easier integration into existing systems without compromising on performance.
Engineers tend to reach for this series when they need a reliable solution for high-power switching applications. The modules come with built-in thermal management features, which help maintain optimal operating temperatures even during extended operation. This is crucial in industrial settings where continuous operation is required, and downtime can be costly.
Another practical observation is the ease of use. Semikron’s IGBT modules often come with comprehensive documentation and support, which can significantly reduce the time and effort needed to integrate them into your system. Overall, the SKM100GB series is a solid choice for anyone looking to boost the power handling capabilities of their industrial or electronic projects.
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SKM100GB semiconductor - Part List
10 parts in total| Mfr Part # | Quantity Available | Price | Category | Vce(on) (Max) @ Vge, Ic | Current - Collector (Ic) (Max) | Mfr | Capacity (Pounds) | Voltage - Supply | Package / Case | Operating Temperature | Current - Collector Cutoff (Max) | Width | Height | Length | Mounting Type | Size / Dimension | Channel Type | Transistor Type | Power - Max | Resistance @ 25degC | Type | RoHS | Vgs (Max) | Voltage - Input (Min) | Package Cooled | Number of Positions | Configuration | Turn On Time | Delay Time - OFF | Current - Collector Pulsed (Icm) | Voltage - Gate Trigger (Vgt) (Max) | Weight | Number of Pins | Package Quantity | Spg | Schematic | Channels per IC | Number of Units | Vce Saturation (Max) @ Ib, Ic | Primary Material | Polarity | Other Specifications | Power Dissipation (Max) | Turn On / Turn Off Time (Typ) | Connection Method | Voltage Rating | Switching Energy | Voltage - Threshold | Rise / Fall Time (Typ) | Function |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SKM100GB12T4 SKM100GB12T4, IGBT Halfbridge Module, N-channel, Dual, 160A 1200V, 7-Pin GB IGBTMOD.100A1200V IGBT module SEMITRANS 2 1200 V, SKM100GB12T4, Semikron Semikron | 232 | 1: ¥670.83 | - | 1200 V | 100 A | 斯洛伐克 | 0.16 千克 | 1.8 | SEMITRANS 2 | +175 °C | 160 A | 34mm | 30.1mm | 94mm | Screw | 94 x 34 x 30.1mm | N | - | - | - | - | RoHS Compliant Part | ±20V | 1200 V | GB | 7 | Dual | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 15 | 10.2 | 3 x M5 | - | - | - | - | - |
SKM100GB125DN SKM100GB125DN, IGBT Module, N-channel, Dual, 100A 1200V, 7-Pin D 93 IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS SEMITRANS Transistor: IGBT; 1.2kV; 100A; SEMITRANS2N Semikron N通道 IGBT 模块, 双半桥, 100 A 1200 V, 7针 SEMITRANS2封装 Semikron | 138 | 1: ¥948.70 | - | 1200 V | 100A | 意大利 | 0.18 千克 | 3.3V | SEMITRANS2N | +150 °C | 100 A | 34.5mm | 30.5mm | 94.5mm | Screw | 94.5 x 34.5 x 30.5mm | N | IGBT | - | - | - | RoHS Compliant Part | ±20V | 1200 V | D 93 | 7 | Dual | 40ns | 20ns | 150A | ±20V | 0.17 kg | 7 | 8 | 8 | see | 双半桥 | 1 | - | - | - | - | - | - | - | - | - | - | - | - |
SKM100GB12V SEMIKRON | 10 | 1: ¥906.00 | - | 1200 V | 100 A | 斯洛伐克 | 0.16 千克 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 26 | 1: ¥761.04 | - | 600 V | 130A | 斯洛伐克 | 0.16 千克 | 600V | D61 | -40to150°C | - | - | - | - | - | - | - | IGBT | 7mJ | 0.27K/W | Standard | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2.1V | Si | N-Channel | 5.6nF | - | - | - | 600V,130A | 4mJ(Typ.) | 4.5V(Min.)to6.5V(Max.) | 35nS(Typ.) | - | |
SKM100GB176D SEMITRANS;IGBTSTANDARDHALFBRIDG;1700V Transistor: IGBT; 1.7kV; 125A; SEMITRANS2 Semikron N通道 IGBT 模块, 双半桥, 125 A 1700 V, 7针 SEMITRANS2封装 Sindopower / Semikron | 10 | 1: ¥636.10 | - | 1700 V | 125A | 斯洛伐克 | 0.16 千克 | 1700V | SEMITRANS2 | +150 °C | 125 A | 34mm | 30.5mm | 94mm | screwed | see | N | IGBT | 44mJ | 0.24K/W | Trench | - | - | - | - | - | - | 40ns | 140ns | 150A | ±20V | 0.16 kg | 7 | 8 | 8 | see | 双半桥 | 1 | 2V | Si | N-Channel | 5.7nF | - | - | - | - | - | - | - | Y |
| 0 | - | 1200 V | 160A | 斯洛伐克 | 0.325 千克 | 1200V | SEMITRANS3 | - | - | - | - | - | - | - | - | - | 10.7mJ | 0.038K/W | Trench | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
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