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SSM6P mosfet Series

P-channel MOSFETs for low-power signal and switching applications

The SSM6P series from Toshiba Corporation is a lineup of P-channel MOSFETs designed for low-power applications, including both signal and switching roles. These devices are commonly found in circuits where power consumption needs to be minimized without compromising performance. If you're working on projects involving audio amplifiers, low-noise preamplifiers, or any system that requires precise control over power consumption, these MOSFETs are a solid choice.

One thing worth noting is their efficiency in low-power scenarios. The SSM6P series is particularly effective in reducing power loss, which is crucial in battery-powered devices or systems where every milliwatt counts. Engineers tend to reach for this when they need to optimize power usage while maintaining reliable operation. Additionally, their low on-resistance and high transconductance make them ideal for applications requiring fast switching speeds without significant power spikes.

Series Images (8)

Frequently Asked Questions

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SSM6P mosfet - Part List

14 parts in total

Rds On (Max) @ Id, Vgs

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC

Other Names

Vgs (Max)

On-State Resistance (Max)

Package / Case

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Series

Standard Package

Vce(on) (Max) @ Vge, Ic

Drain to Source Voltage (Vdss)

Packaging

Supplier Device Package

Operating Temperature

RoHS

FET Type

Power - Max

Power - Rated

Voltage - Breakdown

Current - Peak Pulse (10/1000us)

Current - Drain (Idss) @ Vds (Vgs=0)

Channel Type

Power Dissipation (Max)

Factory Pack Quantity

Transistor Type

Power - Average Forward

Voltage - Gate Trigger (Vgt) (Max)

Height

Length

Mfr Part #Quantity AvailablePriceCategoryPackagingPackage / CaseRoHSCurrent - Continuous Drain (Id) @ 25degCDrain to Source Voltage (Vdss)Standard PackageFET TypeFET FeaturePower - MaxRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsMounting TypeSupplier Device PackageVgs(th) (Max) @ IdOther NamesVgs (Max)On-State Resistance (Max)Vce(on) (Max) @ Vge, IcGate Charge (Qg) (Max) @ VgsFactory Pack QuantityTransistor TypeHeightLengthSeriesTechnologyManufacturerPower - RatedCurrent - Drain (Idss) @ Vds (Vgs=0)Channel TypeOperating TemperatureNumber of ChannelsPower - Average ForwardMounting StyleNumber of ElementsVoltage - BreakdownCurrent - Peak Pulse (10/1000us)Number of PositionsPower Dissipation (Max)Voltage - Gate Trigger (Vgt) (Max)Rad HardenedNoise FigurePower - OutputFrequency - MaxCurrent Drain (Id) - MaxVce Saturation (Max) @ Ib, IcPackage CooledTypePolarityStandard Package NameEU RoHSPackage QuantitySVHCTariff NoVoltage - ThresholdCurrent Rating (Max)Resistance - RDS(On)Contact Voltage (Max)WeightTerminationNumber of PinsMaterial FinishModule/Board TypeGate ChargeConfiguration
SSM6P16FE(TE85L,F)
SSM6P16FE(TE85L,F)

Trans MOSFET P-CH 20V 0.1A 6-Pin ES T/R MOSF P CH 20V 100MA ES6

toshiba

39471: ¥4.08-Tape & Reel (TR)6ESLead free / RoHS Compliant100mA (Ta)20VTape & ReelMOSFET P-Channel, Metal OxideLogic Level Gate150mW8000@4V mOhm11pF @ 3VSurface MountES6-SSM6P16FE(TE85LF)CT±10 V8 ohm20 V--------0.15 W0.1 AP-55 to 150 °C---220 V0.1 A6--NoNot Required dBNot Required dBNot Required MHz0.1 ANot Required %ESSmall SignalP----------------
SSM6P05FU(TE85LF
SSM6P05FU(TE85LF

Trans MOSFET P-CH 20V 0.2A 6-Pin US T/R

toshiba

103000: ¥1.2519-----------------------------------------------------------------
SSM6P26TU(TE85L,F)
SSM6P26TU(TE85L,F)

Trans MOSFET P-CH 20V 0.5A 6-Pin UF T/R

Toshiba

5825: ¥2.3085-Tape and Reel--------------±8230@4V-----------Enhancement150---2200.56500----------UFCompliantUF-------------
SSM6P15FE(TE85L,F)
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SSM6P15FE(TE85L,F)

MOSFET DUAL P-CH 30V .1A ES6

Toshiba

381: ¥0.4793-Tape & Reel (TR)SOT-563, SOT-666Lead free / RoHS Compliant100mA30V4,0002 P-Channel (Dual)Logic Level Gate150mW12 Ohm @ 10mA, 4V9.1pF @ 3VSurface MountES6 (1.6x1.6)1.7V @ 100µASSM6P15FE(TE85LF)CT-------------------------------------------------
SSM6P35FE(TE85L,F)
3
SSM6P35FE(TE85L,F)

MOSFET DUAL P-CH 20V .1A ES6

Toshiba

22911: ¥3.74-Tape & Reel (TR)SOT-563, SOT-666Lead free / RoHS Compliant100mA20V4,0002 P-Channel (Dual)Logic Level Gate150mW8 Ohm @ 50mA, 4V12.2pF @ 3VSurface MountES6 (1.6x1.6)1V @ 1mASSM6P35FE(TE85LF)CT-------------------------------------------------
SSM6P36FE(TE85L,F)
SSM6P36FE(TE85L,F)

MOSFET DUAL P-CH 20V .33A ES6

Toshiba

0-----------------------------------------------------------------
SSM6P41FE(TE85L,F)
3
SSM6P41FE(TE85L,F)

MOSFET DUAL P-CH 20V .72A ES6

Toshiba

661: ¥2.1601-Tape & Reel (TR)SOT-563, SOT-666Lead free / RoHS Compliant720mA20V4,0002 P-Channel (Dual)Logic Level Gate150mW300 mOhm @ 400mA, 4.5V110pF @ 10VSurface MountES6 (1.6x1.6)1V @ 1mASSM6P41FE(TE85LF)CT---1.76nC @ 4.5V---------------------------------------------
SSM6P47NU,LF
2
SSM6P47NU,LF

MOSFET P CH 20V 4A 2-2Y1A MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 8V GS

Toshiba

103000: ¥1.7748-Tape & Reel (TR)6-WDFN Exposed PadLead free / RoHS Compliant4A20V3,0002 P-Channel (Dual)Logic Level Gate1W95 mOhm @ 1.5A, 4.5V290pF @ 10VSurface Mount6-uDFN (2x2)1V @ 1mASSM6P47NULFCT8 V242 mOhms- 20 V4.6nC @ 4.5V3000P-Channel0.75 mm2 mmSSM6P47SiToshiba1 W- 4 A--2 Channel1 WSMD/SMT-----8 V-------------------------
SSM6P49NU,LF
2
SSM6P49NU,LF

MOSFET P CH 20V 4A 2-1Y1A MOSFET SM Sig MOS 2 in 1 P-Ch -4A -20V 12V GS

Toshiba

54811: ¥3.128-Tape & Reel (TR)6-WDFN Exposed PadLead free / RoHS Compliant4A20V3,0002 P-Channel (Dual)Logic Level Gate1W45 mOhm @ 3.5A, 10V480pF @ 10VSurface Mount6-uDFN (2x2)1.2V @ 1mASSM6P49NULFCT12 V157 mOhms- 20 V6.74nC @ 4.5V3000P-Channel0.75 mm2 mmSSM6P49SiToshiba1 W- 4 A--2 Channel1 WSMD/SMT-----12 V-------------------------
SSM6P36FE,LM(T
3
SSM6P36FE,LM(T

MOSFET DUAL P-CH 20V .33A ES6

Toshiba Semiconductor and Storage

104000: ¥1.1628-Tape & Reel (TR)SOT-563, SOT-666Lead free / RoHS Compliant330mA20V4,0002 P-Channel (Dual)Logic Level Gate150mW1.31 Ohm @ 100mA, 4.5V43pF @ 10VSurface MountES6 (1.6x1.6)1V @ 1mA----1.2nC @ 4V---------------------------------------------
SSM6P05FU(TE85L,F)
SSM6P05FU(TE85L,F)

MOSFET P CH 0.2A 20V SOT23

TOSHIBA

0--:US6-:200mA:-20V----------:-4V:3.2ohm---:P Channel----------------:300mW-------------:No SVHC (20-Jun-2013)85412900:1.1V:-200mA:3.3ohm:20V0.000008:SMD:6:-:Dual--
SSM6P47NU,LF(T
SSM6P47NU,LF(T

MOSFET 2P-CH 20V 4A 2-2Y1A

Toshiba Semiconductor and Storage

53821: ¥5.576-----------------------------------------------------------------
SSM6P36FE,LM
SSM6P36FE,LM

MOSFET 2P-CH 20V 0.33A ES6 MOSFET Small Signal MOSFET

Toshiba Semiconductor and Storage

26401: ¥3.468-ReelES6-6RoHS Compliant- 330 mA, - 330 mA---------- 300 mV, - 300 mV-+/- 8 V, +/- 8 V3.6 Ohms, 3.6 Ohms- 20 V, - 20 V-4000P-Channel0.55 mm1.6 mmSSM6P36SiToshiba--Enhancement+ 150 C2 Channel150 mWSMD/SMT-----------------------------1.2 nC, 1.2 nCDual
SSM6P35FE,LM
SSM6P35FE,LM

MOSFET Small-signal MOSFET P-Channel

Toshiba

0-ReelES6-6RoHS Compliant----------------4000-0.55 mm1.6 mmSSM6P35SiToshiba--------------------------------------
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