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Electrical
| Vgs (Max) | ±20 V | Number of Elements | 1 |
| Voltage - Breakdown | 1000 V | Power Dissipation (Max) | 150 W |
| On-State Resistance (Max) | 1.8 Ω | Gate Charge (Qg) (Max) @ Vgs | 120 nC V @ 10 |
| Current - Peak Pulse (10/1000us) | 8 A | Input Capacitance (Ciss) (Max) @ Vds | 1300 pF V @ 25 |
Mechanical
| Width | 4.8mm | Height | 19mm |
| Length | 15.9mm | Mounting Type | Through Hole |
| Package Cooled | TO-3P W, TO-3PN | Size / Dimension | 15.9 x 4.8 x 19mm |
| Number of Positions | 3 | ||
Product Info
| Channel Type | Enhancement | Card Standard | Power MOSFET |
| Configuration | Single | ||
Environmental
| Operating Temperature | +150 °C | ||
