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genesic-semi

genesic-semi- Bipolar Transistors

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant prese

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Bipolar Transistors - 型号列表

8 parts in total

Current - Continuous Drain (Id) @ 25degC

Other Names

Power - Max

Rds On (Max) @ Id, Vgs

Power Dissipation (Max)

Input Capacitance (Ciss) (Max) @ Vds

Packaging

Standard Package

RoHS

Drain to Source Voltage (Vdss)

Mounting Type

Package / Case

Supplier Device Package

Series

Operating Temperature

Mfr Part #Quantity AvailablePriceStandard PackageRoHSDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25degCPackagingSeriesOther NamesFET TypeFET FeaturePower - MaxRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsMounting TypePackage / CaseSupplier Device PackageTariff NoTransistor TypePower Dissipation (Max)WeightNumber of PinsOperating TemperatureFactory Pack QuantityManufacturer
2N7636-GA
2N7636-GA

GeneSiC Semiconductor

108: $1,428.7482No650V4A (Tc) (165°C)Tube2N761242-1147Silicon Carbide, Normally OffSuper Junction7W415 mOhm @ 4A324pF @ 35VSurface MountTO-276AATO-276------10GeneSiC Semiconductor
2N7635-GA
2
2N7635-GA

GeneSiC Semiconductor

101: $1,597.322No650V4A (Tc) (165°C)Bulk2N761242-1146Silicon Carbide, Normally OffSuper Junction7W415 mOhm @ 4A324pF @ 35VThrough HoleTO-257-3TO-25785412900:JFET:7W0:3:250°--
2N7638-GA
2
2N7638-GA

GeneSiC Semiconductor

101: $1,947.902No650V8A (Tc) (158°C)Bulk2N761242-1149Silicon Carbide, Normally OffSuper Junction11W170 mOhm @ 8A720pF @ 35VSurface MountTO-276AATO-27685412900:JFET:11W0:3:250°--
2N7637-GA
2
2N7637-GA

GeneSiC Semiconductor

101: $2,002.262No650V7A (Tc) (165°C)Tube2N761242-1148Silicon Carbide, Normally OffSuper Junction8W170 mOhm @ 7A720pF @ 35VThrough HoleTO-257-3TO-25785412900:JFET:8W0:3:250°--
2N7640-GA
2N7640-GA

GeneSiC Semiconductor

108: $1,880.882No650V16A (Tc) (155°C)Bulk2N761242-1151Silicon Carbide, Normally OffSuper Junction27W105 mOhm @ 16A1534pF @ 35VSurface MountTO-276AATO-276------10GeneSiC Semiconductor
2N7639-GA
2N7639-GA

GeneSiC Semiconductor

108: $1,917.0562No650V15A (Tc) (155°C)Bulk2N761242-1150Silicon Carbide, Normally OffSuper Junction22W105 mOhm @ 15A1534pF @ 35VThrough HoleTO-257-3TO-257------10GeneSiC Semiconductor
GA05JT12-263
2
GA05JT12-263

GeneSiC Semiconductor

1011: $76.5050Lead free / RoHS Compliant:1.2kV:5A:Each*---------85412900:JFET:58W0:3:175°--
GA10JT12-263
2
GA10JT12-263

GeneSiC Semiconductor

821: $134.36850Lead free / RoHS Compliant:1.2kV:10A:Each*---------85412900:JFET:94W0:3:175°--
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