GeneSiC Semiconductor, Inc.- Bipolar Transistors

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant presence in the global SiC market, serving tier-one automotive and industrial customers. Prior to the acquisition, GeneSiC was recognized as one of the few independent SiC suppliers with a fully integrated manufacturing capability from epitaxy to packaged products.

Bipolar Transistors - 型号列表

8 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	RoHS	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25degC	Packaging	Series	Other Names	FET Type	FET Feature	Power - Max	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Supplier Device Package	Tariff No	Transistor Type	Power Dissipation (Max)	Weight	Number of Pins	Operating Temperature	Factory Pack Quantity	Manufacturer
2N7636-GA TRANS SJT 650V 4A TO-257 TRANS SJT 650V 4A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C GeneSiC Semiconductor	10	8: ¥1,428.748	2	No	650V	4A (Tc) (165°C)	Tube	2N76	1242-1147	Silicon Carbide, Normally Off	Super Junction	7W	415 mOhm @ 4A	324pF @ 35V	Surface Mount	TO-276AA	TO-276	-	-	-	-	-	-	10	GeneSiC Semiconductor
2 2N7635-GA TRANS SJT 650V 4A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 4A 225 Degree C SIC JUNCTION TRANS, 650V, 7NA, TO-257-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 4A 225 Degree C GeneSiC Semiconductor	10	1: ¥1,597.32	2	No	650V	4A (Tc) (165°C)	Bulk	2N76	1242-1146	Silicon Carbide, Normally Off	Super Junction	7W	415 mOhm @ 4A	324pF @ 35V	Through Hole	TO-257-3	TO-257	85412900	:JFET	:7W	0	:3	:250°	-	-
2 2N7638-GA TRANS SJT 650V 8A TO-257 TRANS SJT 650V 8A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 8A 225 Degree C SIC JUNCTION TRANS, 650V, 8A, TO-276-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 8A 225 Degree C GeneSiC Semiconductor	10	1: ¥1,947.90	2	No	650V	8A (Tc) (158°C)	Bulk	2N76	1242-1149	Silicon Carbide, Normally Off	Super Junction	11W	170 mOhm @ 8A	720pF @ 35V	Surface Mount	TO-276AA	TO-276	85412900	:JFET	:11W	0	:3	:250°	-	-
2 2N7637-GA TRANS SJT 650V 7A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 7A 225 Degree C SIC JUNCTION TRANS, 650V, 7A, TO-257-3 Bipolar Transistors - BJT SiC High Temp SJT 650V 7A 225 Degree C GeneSiC Semiconductor	10	1: ¥2,002.26	2	No	650V	7A (Tc) (165°C)	Tube	2N76	1242-1148	Silicon Carbide, Normally Off	Super Junction	8W	170 mOhm @ 7A	720pF @ 35V	Through Hole	TO-257-3	TO-257	85412900	:JFET	:8W	0	:3	:250°	-	-
2N7640-GA TRANS SJT 650V 16A TO-257 TRANS SJT 650V 16A TO276 Transistors Bipolar - BJT SiC High Temp SJT 650V 16A 225Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 16A 225Degree C GeneSiC Semiconductor	10	8: ¥1,880.88	2	No	650V	16A (Tc) (155°C)	Bulk	2N76	1242-1151	Silicon Carbide, Normally Off	Super Junction	27W	105 mOhm @ 16A	1534pF @ 35V	Surface Mount	TO-276AA	TO-276	-	-	-	-	-	-	10	GeneSiC Semiconductor
2N7639-GA TRANS SJT 650V 15A TO-257 Transistors Bipolar - BJT SiC High Temp SJT 650V 15A 225Degree C Bipolar Transistors - BJT SiC High Temp SJT 650V 15A 225Degree C GeneSiC Semiconductor	10	8: ¥1,917.056	2	No	650V	15A (Tc) (155°C)	Bulk	2N76	1242-1150	Silicon Carbide, Normally Off	Super Junction	22W	105 mOhm @ 15A	1534pF @ 35V	Through Hole	TO-257-3	TO-257	-	-	-	-	-	-	10	GeneSiC Semiconductor
2 GA05JT12-263 TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-263 MOSFET 1200V 15A Standard GeneSiC Semiconductor	101	1: ¥76.50	50	Lead free / RoHS Compliant	:1.2kV	:5A	:Each	*	-	-	-	-	-	-	-	-	-	85412900	:JFET	:58W	0	:3	:175°	-	-
2 GA10JT12-263 TRANS SJT 1.2KV 10A SIC JUNCTION TRANS, 1.2KV, 10A, TO-263 MOSFET 1200V 25A Standard GeneSiC Semiconductor	82	1: ¥134.368	50	Lead free / RoHS Compliant	:1.2kV	:10A	:Each	*	-	-	-	-	-	-	-	-	-	85412900	:JFET	:94W	0	:3	:175°	-	-