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M/A-COM Technology Solutions Holdings, Inc.

M/A-COM Technology Solutions Holdings, Inc.- IGBT Modules

M/A-COM Technology Solutions Holdings, Inc. (MACOM) is a leading supplier of high-performance analog RF, microwave, and millimeter-wave semiconductor products. Established in 1950 as Microwave Associates, the company is headquartered in Lowell, Massachusetts, USA. MACOM serves a wide range of markets including high-speed optical, satellite, radar, wired and wireless networks, CATV, automotive, industrial, medical, and mobile devices. With over 60 years of experience, it acts as a trusted partner in solving complex challenges across the RF-to-light spectrum. The company offers a broad portfolio of standard and custom devices, integrated circuits, components, modules, and assemblies, encompassing 38 product lines and more than 3,000 products. Key product families include GaAs and GaN-based power amplifiers, low-noise amplifiers, mixers, RF switches, diodes, optical transimpedance amplifiers (TIAs), and clock and data recovery (CDR) ICs. MACOM is recognized as a pillar of the semiconductor industry, holding a strong technology position in high-frequency analog solutions. Its global footprint includes design centers, wafer fabrication, assembly, and test facilities across North America, Europe, Asia, and Australia. The company is certified to ISO9001 and ISO14001 standards and markets its products worldwide through a combination of direct sales, authorized representatives, and leading distributors.

03

IGBT Modules - 型号列表

25 parts in total

Other Names

Current Rating (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Gain

Frequency

Power - Output

Current - Output

Current Transfer Ratio (Min)

Standard Package

Voltage - Test

Voltage Rating

Type

Operating Temperature - Junction

Mfr Part #Quantity AvailablePriceProductOther NamesStandard PackageRoHSGainFrequencyPower - OutputVoltage - TestVoltage RatingTransistor TypeCurrent - OutputCurrent Rating (Max)Current Transfer Ratio (Min)Drain to Source Voltage (Vdss)Voltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)PackagingMounting StylePackage / CaseTypeOperating TemperatureRad HardenedMounting TypeNumber of PositionsOperating Temperature - JunctionPower - RatedChannel TypeConfiguration
V23990-P544-A2>
V23990-P544-A2>

MCMV23990-P544-A20-PM IGBT MODULE

m/a-com technology solutions

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V23990-P840-A4>
V23990-P840-A4>

MCMV23990-P840-A48-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P848-C4>
V23990-P848-C4>

MCMV23990-P848-C48-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P541-A2>
V23990-P541-A2>

MCMV23990-P541-A28-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P543-A2>
V23990-P543-A2>

MCMV23990-P543-A28-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P840-C4>
V23990-P840-C4>

MCMV23990-P840-C48-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P849-A4>
V23990-P849-A4>

MCMV23990-P849-A48-PM IGBT MODULE_TR_RO

m/a-com technology solutions

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V23990-P545-A>>
V23990-P545-A>>

MCMV23990-P545-A21-PM POWER MODULE

m/a-com technology solutions

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V23990-P586-A2>
V23990-P586-A2>

MCMV23990-P586-A20-PM POWER MODULE

m/a-com technology solutions

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V23990-P587-A2>
V23990-P587-A2>

MCMV23990-P587-A20-PM POWER MODULE

m/a-com technology solutions

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V23990-P588-A4>
V23990-P588-A4>

MCMV23990-P588-A41-PM POWER MODULE

m/a-com technology solutions

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V23990-P580-A4>
V23990-P580-A4>

MCMV23990-P580-A41-PM POWER MODULE

m/a-com technology solutions

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V23990-P580-A>>
V23990-P580-A>>

MCMV23990-P580-A46-PM POWER MODULE

m/a-com technology solutions

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V23990-P589-A4>
V23990-P589-A4>

MCMV23990-P589-A41-PM POWER MODULE

m/a-com technology solutions

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V23990-P769-A->
V23990-P769-A->

MCMV23990-P769-A-PM POWER MODULE

m/a-com technology solutions

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MAGX-001214-250L00
MAGX-001214-250L00

Transistors RF GaAs 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB TRANSISTOR,GAN,250W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB Trans JFET 8.8A GaN HEMT 3-Pin

M/A-COM Technology Solutions

1015: ¥4,318.00RF JFET1465-10875RoHS Compliant17.6dB1.2GHz ~ 1.4GHz250W50V65VHEMT250mA9A5 S175 V- 8 V8 ABulkSMD/SMTCu/Mo/Cu flanged ceramicGaN SiC HEMT- 40 C to + 95 CNoScrew395C---
MAGX-002731-180L00
MAGX-002731-180L00

Transistors RF GaAs 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB FETS RF GAN HEMT 180W 2.7-3.1GHZ Transistors RF JFET 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB Trans JFET N-CH GaN HEMT 3-Pin

M/A-COM Technology Solutions

1016: ¥4,433.60RF JFET1465-10935RoHS Compliant11.2dB2.7GHz ~ 3.1GHz180W50V65VHEMT500mA500mA5 S175 V- 8 V10 ABulkSMD/SMTCu/Mo/Cu flanged ceramicGaAs HEMT- 40 C to + 95 CNoScrew395C-NSingle
MAGX-002731-030L00
MAGX-002731-030L00

Transistors RF GaAs 2.7-3.1GHz 50Volt 30W Pk Gain 11.6dB TRANSISTOR,GAN,30WPK,2.7-3.1GHZ Transistors RF JFET 2.7-3.1GHz 50Volt 30W Pk Gain 11.6dB

M/A-COM Technology Solutions

1025: ¥1,611.60RF JFET1465-109110RoHS Compliant11.2dB2.7GHz ~ 3.1GHz30W50V65VHEMT250mA1.5A1 S175 V- 8 V1.5 ABulkSMD/SMTCu/Mo/Cu flanged ceramicGaAs HEMT- 40 C to + 95 C----27 W--
MAGX-001214-125L00
MAGX-001214-125L00

Transistors RF GaAs 1.2-1.4GHz 50Volt 125W Pk Gain 18dB TRANSISTOR,GAN,125W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 125W Pk Gain 18dB

M/A-COM Technology Solutions

1019: ¥2,325.60RF JFET1465-10865RoHS Compliant18.4dB*125W50V65VHEMT100mA4.8A2.5 S175 V- 8 V3.9 ABulkSMD/SMTCu/Mo/Cu flanged ceramicGaN SiC HEMT- 40 C to + 95 C-------
MAGX-000035-030000
MAGX-000035-030000

Transistors RF GaAs 30-3500MHz 50Volt 30W Pk Gain 25dB TRANSISTOR,GAN,30WCW,0.03-3.5GHZ Transistors RF JFET 30-3500MHz 50Volt 30W Pk Gain 25dB Trans JFET 1.2A GaN HEMT 3-Pin

M/A-COM Technology Solutions

101: ¥1,725.50RF JFET1465-107810RoHS Compliant13.6dB1MHz30W65V50VHEMT100mA2.5mA1 S175 V- 8 V1.2 ABulkSMD/SMTCu/Mo/Cu flanged ceramicGaAs HEMT- 40 C to + 95 CNoScrew3150C27 W--
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