
M/A-COM Technology Solutions Holdings, Inc.- IGBT Modules
IGBT Modules - 型号列表
25 parts in total| Mfr Part # | Quantity Available | Price | Product | Other Names | Standard Package | RoHS | Gain | Frequency | Power - Output | Voltage - Test | Voltage Rating | Transistor Type | Current - Output | Current Rating (Max) | Current Transfer Ratio (Min) | Drain to Source Voltage (Vdss) | Voltage - Gate Trigger (Vgt) (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Packaging | Mounting Style | Package / Case | Type | Operating Temperature | Rad Hardened | Mounting Type | Number of Positions | Operating Temperature - Junction | Power - Rated | Channel Type | Configuration |
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MAGX-001214-250L00 Transistors RF GaAs 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB TRANSISTOR,GAN,250W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 250W Pk Gain 17.8dB Trans JFET 8.8A GaN HEMT 3-Pin M/A-COM Technology Solutions | 10 | 15: ¥4,318.00 | RF JFET | 1465-1087 | 5 | RoHS Compliant | 17.6dB | 1.2GHz ~ 1.4GHz | 250W | 50V | 65V | HEMT | 250mA | 9A | 5 S | 175 V | - 8 V | 8 A | Bulk | SMD/SMT | Cu/Mo/Cu flanged ceramic | GaN SiC HEMT | - 40 C to + 95 C | No | Screw | 3 | 95C | - | - | - |
MAGX-002731-180L00 Transistors RF GaAs 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB FETS RF GAN HEMT 180W 2.7-3.1GHZ Transistors RF JFET 2.7-3.1GHz 50Volt 180W Pk Gain 11.6dB Trans JFET N-CH GaN HEMT 3-Pin M/A-COM Technology Solutions | 10 | 16: ¥4,433.60 | RF JFET | 1465-1093 | 5 | RoHS Compliant | 11.2dB | 2.7GHz ~ 3.1GHz | 180W | 50V | 65V | HEMT | 500mA | 500mA | 5 S | 175 V | - 8 V | 10 A | Bulk | SMD/SMT | Cu/Mo/Cu flanged ceramic | GaAs HEMT | - 40 C to + 95 C | No | Screw | 3 | 95C | - | N | Single |
MAGX-002731-030L00 Transistors RF GaAs 2.7-3.1GHz 50Volt 30W Pk Gain 11.6dB TRANSISTOR,GAN,30WPK,2.7-3.1GHZ Transistors RF JFET 2.7-3.1GHz 50Volt 30W Pk Gain 11.6dB M/A-COM Technology Solutions | 10 | 25: ¥1,611.60 | RF JFET | 1465-1091 | 10 | RoHS Compliant | 11.2dB | 2.7GHz ~ 3.1GHz | 30W | 50V | 65V | HEMT | 250mA | 1.5A | 1 S | 175 V | - 8 V | 1.5 A | Bulk | SMD/SMT | Cu/Mo/Cu flanged ceramic | GaAs HEMT | - 40 C to + 95 C | - | - | - | - | 27 W | - | - |
MAGX-001214-125L00 Transistors RF GaAs 1.2-1.4GHz 50Volt 125W Pk Gain 18dB TRANSISTOR,GAN,125W 1.2-1.4GHZ Transistors RF JFET 1.2-1.4GHz 50Volt 125W Pk Gain 18dB M/A-COM Technology Solutions | 10 | 19: ¥2,325.60 | RF JFET | 1465-1086 | 5 | RoHS Compliant | 18.4dB | * | 125W | 50V | 65V | HEMT | 100mA | 4.8A | 2.5 S | 175 V | - 8 V | 3.9 A | Bulk | SMD/SMT | Cu/Mo/Cu flanged ceramic | GaN SiC HEMT | - 40 C to + 95 C | - | - | - | - | - | - | - |
MAGX-000035-030000 Transistors RF GaAs 30-3500MHz 50Volt 30W Pk Gain 25dB TRANSISTOR,GAN,30WCW,0.03-3.5GHZ Transistors RF JFET 30-3500MHz 50Volt 30W Pk Gain 25dB Trans JFET 1.2A GaN HEMT 3-Pin M/A-COM Technology Solutions | 10 | 1: ¥1,725.50 | RF JFET | 1465-1078 | 10 | RoHS Compliant | 13.6dB | 1MHz | 30W | 65V | 50V | HEMT | 100mA | 2.5mA | 1 S | 175 V | - 8 V | 1.2 A | Bulk | SMD/SMT | Cu/Mo/Cu flanged ceramic | GaAs HEMT | - 40 C to + 95 C | No | Screw | 3 | 150C | 27 W | - | - |

