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Rectron Ltd.

Rectron Ltd.- IGBTs

Rectron Ltd., founded in 1977, is a global semiconductor manufacturer specializing in discrete components. Headquartered in Taipei, Taiwan, the company maintains major manufacturing operations in China, notably Rectron (China) Ltd., along with a worldwide sales network. Its core business encompasses the design and production of a comprehensive range of discrete power semiconductors, including rectifiers, diodes, transistors, and transient voltage suppressors. The product portfolio features advanced technologies such as Schottky barrier, super-fast, ultra-fast epitaxial, high-efficiency, fast recovery, and standard recovery rectifiers. Proprietary glass passivated junction structures are integral to many devices, enhancing long-term reliability and environmental ruggedness. Rectron serves diverse sectors like consumer electronics, automotive, industrial, and telecommunications, delivering critical solutions for power conversion and circuit protection. As a specialized manufacturer, Rectron holds a strong position in the discrete power semiconductor market, recognized for high-volume, cost-effective production. Its vertically integrated capabilities and dedicated China facility ensure competitive pricing and supply chain stability. With decades of experience, the company continues to innovate in discrete packaging, thermal management, and energy efficiency to meet evolving industry demands.

03

IGBTs - 型号列表

8 parts in total

Current - Continuous Drain (Id) @ 25degC

Packaging

Rds On (Max) @ Id, Vgs

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Package / Case

Supplier Device Package

Vgs(th) (Max) @ Id

Power Dissipation (Max)

Technology

Manufacturer

FET Type

Vgs (Max)

Drive Voltage (Max Rds On, Min Rds On)

Mounting Type

Operating Temperature

Mfr Part #Quantity AvailablePricePackagingTechnologyCurrent - Continuous Drain (Id) @ 25degCManufacturerPart StatusFET FeatureVgs(th) (Max) @ IdRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsMounting TypePackage / CaseSupplier Device PackageSeriesOperating TemperatureQualificationFET TypeVgs (Max)Power Dissipation (Max)Drive Voltage (Max Rds On, Min Rds On)MfrGradeRoHSPower - MaxGate Charge (Qg) (Max) @ VgsConfigurationBase Product Number
TTIP32C-C
TTIP32C-C

MOSFET TRANSISTOR

Rectron

101000: ¥1.9924Tube--------------------------
TTIP125
TTIP125

MOSFET PNP POWER TRANS MOSFET PNP Plastic Power Transistor

Rectron

101000: ¥3.3796BulkSi-Rectron------------------RoHS Compliant----
TC45H5
TC45H5

MOSFET TRAN PNP 10 AMP

Rectron

101000: ¥3.876BulkSi10 ARectron-----------------------
SI2309DS
SI2309DS

MOSFET Plastic-Encapsulated MOSFET P-CH-60V

Rectron

21610: ¥0.5177ReelSi-Rectron------------------RoHS Compliant----
RM12N650T2
RM12N650T2

MOSFET N-CH 650V 11.5A TO220-3

onsemi

-TubeMOSFET (Metal Oxide)11.5A (Tc)-Active-4V @ 250µA360mOhm @ 7A, 10V650 V870 pF @ 50 VThrough HoleTO-220-3TO-220-3--55°C ~ 150°C (TJ)-N-Channel±30V101W (Tc)10VRectron USA------
RM3407
RM3407

MOSFET P-CHANNEL 30V 4.3A SOT23

onsemi

-Tape & Reel (TR)MOSFET (Metal Oxide)4.3A (Ta)-Active-3V @ 250µA52mOhm @ 4A, 10V30 V700 pF @ 15 VSurface MountTO-236-3, SC-59, SOT-23-3SOT-23--55°C ~ 150°C (TJ)-P-Channel±20V1.5W (Ta)4.5V, 10VRectron USA------
RMD0A8P20ES9
RMD0A8P20ES9

MOSFET 2P-CH 20V 0.8A SOT363-6L

onsemi

-Tape & Reel (TR)MOSFET (Metal Oxide)800mA (Ta)Rectron USAActive-1V @ 250µA1.2Ohm @ 500mA, 4.5V20V87pF @ 10VSurface Mount6-TSSOP, SC-88, SOT-363SOT-363-6L--55°C ~ 150°C (TJ)--------800mW (Ta)0.0018C @ 4.5V2 P-Channel (Dual)RMD0A8
RM40P40LD
RM40P40LD

MOSFET P-CHANNEL 40V 40A TO252-2

onsemi

-Tape & Reel (TR)MOSFET (Metal Oxide)40A (Tc)-Active-3V @ 250µA14mOhm @ 12A, 10V40 V2960 pF @ 20 VSurface MountTO-252-3, DPAK (2 Leads + Tab), SC-63TO-252-2--55°C ~ 175°C (TJ)-P-Channel±20V80W (Tc)10VRectron USA------
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