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Semikron Elektronik GmbH & Co. KG

Semikron Elektronik GmbH & Co. KG- IGBTs

Semikron is a globally leading power electronics manufacturer headquartered in Nuremberg, Germany, and founded in 1951 as a family-owned company with over 2,800 employees worldwide. The company specializes in power modules and systems for medium to high power applications, typically ranging from approximately 2 kW to 10 MW. Its products form the core of modern energy-efficient motor drives, industrial automation systems, power supplies, renewable energy (wind and solar), and multipurpose vehicles. The portfolio includes IGBT modules, MOSFET modules, diode/thyristor modules, and intelligent power modules such as SKiiP and MiniSKiiP, along with driver controllers and customized power assemblies. Semikron has pioneered innovations such as pressure contact technology and SKiiP technology, enabling highly reliable and compact designs. With production sites in Germany, Brazil, China, France, India, Italy, South Korea, Slovakia, South Africa, and the United States, and a total of 30 subsidiaries, it ensures rapid local support globally. As a top-tier power semiconductor manufacturer, Semikron holds a significant market share in power modules, particularly in IGBT and diode modules, and is recognized for its energy-saving solutions. In 2009, the company launched an online direct sales platform to complement its distribution channels. In 2022, Semikron merged with Danfoss Silicon Power to form Semikron Danfoss, further strengthening its position in the power semiconductor market.

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IGBTs - 型号列表

29 parts in total

Power - Max

Current - Collector (Ic) (Max)

Other Specifications

Package / Case

Vce Saturation (Max) @ Ib, Ic

Type

Current Rating (Max)

Resistance @ 25degC

Switching Energy

Voltage - Off State

Transistor Type

Voltage - Supply

Operating Temperature - Junction

Rise / Fall Time (Typ)

Weight

Mounting Type

Package Quantity

Spg

Mfr Part #Quantity AvailablePricePackage / CaseTypePower - MaxVoltage - SupplyVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Primary MaterialPolarityOther SpecificationsTransistor TypeCurrent Rating (Max)Resistance @ 25degCWeightPackage QuantitySpgNumber of UnitsOperating Temperature - JunctionVgs (Max)Switching EnergyVoltage - ThresholdRise / Fall Time (Typ)Operating TemperatureVoltage - Off StateMounting TypeTurn On TimeDelay Time - OFFCurrent - Collector Pulsed (Icm)Size / DimensionSchematicRoHSPower Dissipation (Max)Turn On / Turn Off Time (Typ)ConfigurationConnection Method
SK200GD066T
SK200GD066T

IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS

SEMIKRON

-T74Trench25.9mJ600V1.45V174ASiN-Channel12.2nFIGBT------------------------
SK30DGDL066ET
SK30DGDL066ET

IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS

SEMIKRON

--Bridge--------38A-----T49-----------------
SK50DGDL126T
SK50DGDL126T

IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS

SEMIKRON

--Bridge--------68A-----T75-----------------
SKM200GB123D
2
SKM200GB123D

IGBT;D-56;IGBT;1200V;200A;1200V;20V;5.5V(Typ.) Transistor: IGBT; 1.2kV; 200A; SEMITRANS3

SEMIKRON

-D56Standard41mJ1200V2.5V200ASiN-Channel10nFIGBT-0.09K/W0.3 kg12121-±20V24mJ5.5V(Typ.)70ns–40to+150°C-screwed100ns70ns400Aseesee-----
SK100DGDL066T
SK100DGDL066T

IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS

SEMIKRON

--Bridge--------106A-----T75-----------------
SK30GB128
SK30GB128

DUALIGBTMODULE,1200V,SEMITOP2

SEMIKRON

-Semitop2SPT4.99mJ1200V2V35ASiN-Channel1.9nF-------------------------
SKKD701/12
SKKD701/12

Semiconductor,IGBT;701A;1200V;Semipack5 Diode power module; 1.2kV; SEMIPACK5

Sindopower / Semikron

-SEMIPACK5--------diode power module703A-0.43 g111------1.2kV-----------
SKKD701/16
SKKD701/16

Semiconductor,IGBT;701A;1600V;Semipack5 Diode power module; 1.6kV; SEMIPACK5

Sindopower / Semikron

101: ¥2,715.376SEMIPACK5--------diode power module703A-0.43 g111------1.6kV-----------
SKKD701/22
SKKD701/22

Semiconductor,IGBT;701A;2200V;Semipack5

Sindopower / Semikron

-----------------------------------
SKM300GB123D
SKM300GB123D

Transistor,IGBT;D-56;IGBT;300A;1200V;20V;5.5V(Typ.)

Sindopower / Semikron

-D56Standard54mJ1200V2.5V300ASiN-Channel18nFIGBT-0.075K/W-----±20V28mJ5.5V(Typ.)70ns–40to+150°C------------
SK60GB128
SK60GB128

DUALIGBTMODULE,1200V,SEMITOP3

Sindopower / Semikron

-T27SPT10.6mJ1200V1.9V63ASiN-Channel4.46nF-------------------------
SK30GD123
SK30GD123

SIXPACKIGBTMODULE,1200V,SEMITOP3

Sindopower / Semikron

101: ¥1,028.50T12Standard6mJ1200V2.5V33ASiN-Channel1.65nFIGBT-------------------RoHS Compliant Part----
SK75GD066T
SK75GD066T

IGBTHALFBRIDGEULTRAFAST,1200V,SEMITRANS

Sindopower / Semikron

-T74Trench5.9mJ600V1.45V83ASiN-Channel4.7nFIGBT------------------------
SKM400GB123D
SKM400GB123D

IGBT;D-56;IGBT;1200V;400A;1200V;20V;5.5V(Typ.)

Sindopower / Semikron

-D56Standard78mJ1200V2.5V400ASiN-Channel22nFIGBT-0.05K/W-----±20V38mJ5.5V(Typ.)80ns–40to+150°C------------
SKHI10/12R
SKHI10/12R

HighPowerIGBTDriverPCB

Sindopower / Semikron

101: ¥1,605.888----------------------------------
SKKD701/18
SKKD701/18

Semiconductor,IGBT;701A;1800V;Semipack5 Diode power module; 1.8kV; SEMIPACK5

Sindopower / Semikron

-SEMIPACK5--------diode power module703A-0.43 g111------1.8kV-----------
SEMIX202GB12T4S
SEMIX202GB12T4S

IGBTModule,Trench,Half-Bridge,1200V,314AMax.,SEMiX2s

Sindopower / Semikron

-SEMiX®2sTrench43mJ1200V1.8V314ASiN-Channel12.3nF--0.14K/W----------------------
SEMIX754GB128DS
SEMIX754GB128DS

IGBTModule,SPT,Half-Bridge,1200V,680AMax.,SEMiX4s

Sindopower / Semikron

-SEMiX®4sSPT92mJ1200V1.9V680ASiN-Channel37.7nF--0.05K/W----------------------
SK50GB065
SK50GB065

DUALIGBTMODULE,600V,SEMITOP2

Sindopower / Semikron

-T32Ultrafast1.8mJ600V2V54ASiN-Channel3.2nFIGBT------------------------
SK35GD065ET
2
SK35GD065ET

SIXPACKIGBTMODULE,600V,SEMITOP3 IGBT module SEMITOP 3 600 V, SK35GD065ET, Semikron

Sindopower / Semikron

-T52Ultrafast1.9mJ600V2V45ASiN-Channel2.7nFIGBT-------------1 x M4------1.30.63-phaseSoldering pins
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