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California Eastern Laboratories

California Eastern Laboratories- RF Front-End Modules

California Eastern Laboratories (CEL), headquartered in Santa Clara, California, is a leading distributor and solutions provider for compound semiconductor devices and wireless connectivity products. With over five decades of experience, CEL serves as the exclusive sales and marketing partner in the Americas for Renesas Electronics Corporation’s component semiconductor portfolio, which originated from NEC Electronics. The company offers a broad range of RF components including GaAs FETs, MMICs, and RFICs that power wireless infrastructure and mobile communication systems. Its product line also features high-reliability optocouplers and solid-state relays for industrial control and automation, as well as laser diodes and photodetectors for optical sensing and communications. For IoT and embedded wireless, CEL designs and manufactures the MeshWorks™ and MeshConnect™ families of IEEE 802.15.4 and ZigBee modules, software, and development tools. These professional-grade solutions simplify wireless design and accelerate time-to-market for smart home, building automation, and industrial IoT applications. CEL serves a diverse customer base including OEMs, contract manufacturers, and design houses in RF & wireless, broadband communications, automated test equipment, and industrial control markets. The company maintains large inventories and provides world-class engineering and applications support from its technical centers in Santa Clara, California and Wauconda, Illinois. With its extensive network of sales offices, representatives, and distributors across the Americas, CEL ensures rapid fulfillment and localized technical assistance. The company’s long-standing alliance with Renesas and its proprietary wireless products make it a trusted bridge between advanced Japanese semiconductor technology and the North and South American markets.

03

RF Front-End Modules - 型号列表

37 parts in total

Other Names

Gain

Package / Case

Noise Figure

Frequency

Current Rating (Max)

Current Transfer Ratio (Min)

Current - Drain (Idss) @ Vds (Vgs=0)

Power - Rated

Supplier Device Package

Packaging

Type

Operating Temperature

Standard Package

Power - Output

Vce(on) (Max) @ Vge, Ic

Factory Pack Quantity

Current - Output

P1dB

Product Category

RoHS

Voltage - Supply

Transistor Type

Voltage - Gate Trigger (Vgt) (Max)

Mfr Part #Quantity AvailablePricePackagingRoHSFrequencyPackage / CaseTypeOperating TemperatureProduct CategoryMounting StyleProductGainPower - RatedCurrent Transfer Ratio (Min)Voltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)Noise FigureDrain to Source Voltage (Vdss)Current - OutputStandard PackageTransistor TypeVoltage - TestVoltage RatingCurrent Rating (Max)Supplier Device PackageOther NamesPower - OutputP1dBVce(on) (Max) @ Vge, IcFactory Pack QuantityVoltage - SupplyIdle Current, Typ @ 25degCSensitivityData InterfaceData Rate (Max)Current - ReceivingCurrent - TransmittingAntenna ConnectorApplicationsModulation or ProtocolConfiguration
UPG2253T6S-A
UPG2253T6S-A

RF Front End GaAs HJ-FET,RF FEIC 3.0V/95mA

CEL

101: ¥24.684BulkRoHS Compliant2.45 GHzQFN-16Bluetooth+ 85 CRF Front EndSMD/SMT--------95 mA-----------3 V4 uA---------
UPG2253T6S-E2-A
UPG2253T6S-E2-A

RF Front End GaAs HJ-FET,RF FEIC 3.0V/95mA

CEL

102155: ¥14.416ReelRoHS Compliant2.45 GHzQFN-16Bluetooth+ 85 CRF Front EndSMD/SMT--------95 mA-----------3 V4 uA---------
ZFSM-101-1
ZFSM-101-1

Zigbee / 802.15.4 Modules FreeStar Zigbee100mW MODULE ZIGBEE 802.15.4

CEL

-Bulk-2.4GHz ~ 2.4835GHzPCB Module--40°C ~ 85°C-----------50------100mW (20dBm)---2.4 V ~ 3.6 V--92dBmPads for Pins250kbps42mA150mAOn-Board, TraceGeneral Purpose802.15.4 Zigbee-
NE3508M04-A
NE3508M04-A

Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-TSMM Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET

CEL

101: ¥13.056BulkRoHS Compliant2GHzSOT-343FGaAs HEMT+ 150 CTransistors RF JFETSMD/SMTRF JFET14dB175 mW100 mS- 3 V120 mA0.45dB4 V10mA1HFET2V4V120mAF4TSMM, M04NE3508M04A18dBm18 dBm-------------
NE3512S02-A
NE3512S02-A

Transistors RF GaAs C to Ku Band Super Low Noise Amp N-Ch HJ-FET NCH 13.5DB S02 Transistors RF JFET C to Ku Band Super Low Noise Amp N-Ch

CEL

101: ¥16.252BulkRoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5dB165 mW55 mS- 3 V70 mA0.35dB4 V10mA1HFET2V4V70mAS02NE3512S02A--4 V------------
NE3515S02-A
NE3515S02-A

Transistors RF GaAs X to Ku-BAND SUPER LOW NOISE AMP N-CH FET RF HFET 12GHZ 2V 10MA S02 Transistors RF JFET X to Ku-BAND SUPER LOW NOISE AMP N-CH

CEL

101: ¥25.296BulkRoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET12.5dB165 mW70 mS- 3 V88 mA0.3dB4 V10mA1HFET2V4V88mAS02NE3515S02A14dBm14 dBm-------------
NE3512S02-T1C-A
NE3512S02-T1C-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET HJ-FET NCH 13.5DB S02 Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET

CEL

23711: ¥8.0294Tape & Reel (TR)Lead free / RoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5dB165 mW55 mS- 3 V70 mA0.35dB4 V10mA2,000HFET2V4V70mAS02NE3512S02-T1C-ACT---------------
NE3511S02-T1C-A
NE3511S02-T1C-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET HJ-FET NCH 13.5DB S02 Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET

CEL

20002000: ¥8.9046Tape & Reel (TR)RoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5dB165 mW65 mS- 3 V70 mA0.3dB4 V10mA2,000HFET2V4V70mAS02----2000-----------
NE3503M04-A
NE3503M04-A

Transistors RF GaAs Low Noise HJ FET AMP HJ-FET 12GHZ SOT-343 Transistors RF JFET Low Noise HJ FET AMP HJ-FET 12GHZ M04

CEL

101: ¥14.756BulkRoHS Compliant12GHzSC-82A, SOT-343GaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET12dB125 mW55 mS- 3 V70 mA0.45dB4 V10mA1HFET2V4V70mASOT-343NE3503M04A--- 0.7 V50-----------
NE3511S02-A
NE3511S02-A

Transistors RF GaAs X to Ku Band Super Low Noise Amp N-Ch HJ-FET NCH 13.5DB S02 Transistors RF JFET X to Ku Band Super Low Noise Amp N-Ch

CEL

101: ¥21.352BulkRoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5dB165 mW65 mS- 3 V70 mA0.3dB4 V10mA1HFET2V4V70mAS02NE3511S02A--- 0.7 V------------
NE3517S03-A
NE3517S03-A

Transistors RF GaAs 20GHz NF .7dB Typ Ga 13.5dB Typ FET RF HJFET 20GHZ 4V 15MA S03 Transistors RF JFET 20GHz NF .7dB Typ Ga 13.5dB Typ

CEL

3861: ¥30.464BulkRoHS Compliant20GHz4-SMD, Flat LeadsGaAs HEMT+ 125 C-SMD/SMTRF JFET13.5dB165 mW55 mS- 3 V70 mA0.7dB4 V10mA1HFET2V4V15mAS03NE3517S03A---------------
NE3510M04-A
NE3510M04-A

Transistors RF GaAs L-S Band Lo No Amp HJ-FET N-CH 4GHZ M04 Transistors RF JFET L-S Band Lo No Amp

CEL

101: ¥13.736BulkRoHS Compliant4GHzSOT-343FGaAs HEMT+ 150 CTransistors RF JFETSMD/SMTRF JFET16dB125 mW70 mS- 3 V97 mA0.45dB4 V15mA120HFET2V4V97mAM04NE3510M04A11dBm11 dBm- 0.7 V50-----------
NE3210S01
NE3210S01

Transistors RF GaAs Super Lo Noise HJFET Transistors RF JFET Super Lo Noise HJFET

CEL

1028: ¥46.784Cut TapeRoHS Compliant12 GHzSO-1GaAs pHEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5 dB165 mW55 mS- 3 V70 mA0.35 dB4 V----------2 V------------
NE3515S02-T1C-A
NE3515S02-T1C-A

Transistors RF GaAs Super Low Noise Pseudomorphic FET RF HFET 12GHZ 2V 10MA S02 Transistors RF JFET Super Low Noise Pseudomorphic

CEL

8881: ¥19.788Tape & Reel (TR)Lead free / RoHS Compliant12GHz4-SMD, Flat LeadsGaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET12.5dB165 mW70 mS- 3 V88 mA0.3dB4 V10mA2,000HFET2V4V88mAS02NE3515S02-T1C-ACT14dBm14 dBm-------------
NE3509M04-A
NE3509M04-A

Transistors RF GaAs L to S Band Lo Noise Amplifier N-Ch HJFET AMP HJ-FET 2GHZ 4-SMINI Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET

CEL

101: ¥13.056BulkRoHS Compliant2GHzSOT-343FGaAs HEMT+ 150 CTransistors RF JFETSMD/SMTRF JFET17.5dB150 mW80 mS- 3 V60 mA0.4dB4 V10mA1HFET2V4V60mAM04NE3509M04A11dBm11 dBm- 0.5 V50-----------
NE4503S01-A
NE4503S01-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET

CEL

101: ¥13.94BulkRoHS Compliant--GaAs-Transistors RF JFET-RF JFET------------------------------
NE4210S01
NE4210S01

Transistors RF GaAs Super Lo Noise HJFET Transistors RF JFET Super Lo Noise HJFET

CEL

102660: ¥12.784BulkRoHS Compliant12 GHzS0-1GaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13 dB165 mW55 mS- 3 V70 mA0.5 dB4 V-----------------------
NE552R479A-T1-A
NE552R479A-T1-A

Transistors RF GaAs L&S Band Med Power Transistors RF JFET L&S Band Med Power

CEL

10625: ¥29.92ReelRoHS Compliant2.45 GHz79AGaAs+ 125 CTransistors RF JFETSMD/SMTRF JFET11 dB3 W0.4 S2 V230 mA----N-Channel--------1000----------Single
NE3515S02-T1D-A
NE3515S02-T1D-A

Transistors RF GaAs Super Low Noise Pseudomorphic Transistors RF JFET Super Low Noise Pseudomorphic

CEL

106670: ¥8.16ReelRoHS Compliant12 GHzS0-2GaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET12.5 dB165 mW70 mS- 3 V88 mA0.3 dB4 V---------14 dBm-------------
NE3512S02-T1D-A
NE3512S02-T1D-A

Transistors RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET

CEL

107650: ¥3.298ReelRoHS Compliant12 GHzS0-2GaAs HEMT+ 125 CTransistors RF JFETSMD/SMTRF JFET13.5 dB165 mW55 mS- 3 V70 mA0.35 dB4 V-----------10000-----------
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