STMicroelectronics N.V.- IGBTs

STMicroelectronics N.V., commonly known as ST, was formed in 1987 through the merger of Italian SGS Microelettronica and French Thomson Semiconducteurs. Headquartered in Geneva, Switzerland, it is one of the largest semiconductor companies globally. The company went public in 1994 and is listed on the New York Stock Exchange (NYSE: STM), Euronext Paris, and Borsa Italiana in Milan. STMicroelectronics serves customers across a broad spectrum of electronics applications with innovative semiconductor solutions. Its core business areas include automotive, industrial, personal electronics, and communications infrastructure. The company boasts an extensive product portfolio featuring microcontrollers (MCU), specifically the STM32 family which is widely adopted for embedded applications. In analog and mixed-signal ICs, ST offers operational amplifiers, comparators, and data converters, while its power management products include a wide range of voltage regulators and motor drivers. ST is a leader in power discrete and modules, such as MOSFETs, IGBTs, and silicon carbide (SiC) devices, crucial for high-efficiency power conversion. The sensor product line covers MEMS sensors like accelerometers, gyroscopes, and environmental sensors, as well as time-of-flight ranging sensors. ST is recognized as a top-tier semiconductor company, consistently ranking among the top 10 globally by revenue, and holds leading market positions in automotive ICs, MEMS sensors, and general-purpose MCUs, leveraging its advanced manufacturing and R&D strengths.

IGBTs - 型号列表

2,740 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	Vgs (Max)	Mounting Type	Package / Case	Channel Type	Operating Temperature	Voltage - Breakdown	Current - Peak Pulse (10/1000us)	Switch Time (Ton, Toff) (Max)	RoHS	Rds On (Max) @ Id, Vgs	Packaging	Supplier Device Package	Power - Max	Propagation Delay (Max)	Standard Package Name	EU RoHS	Delay to 1st Tap	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Lead Style	Package Quantity	Number of Positions	FET Type	FET Feature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Product Category	Fall Time (Typ)	Number of Elements	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Mounting Style	Configuration	Other Names	Factory Pack Quantity	Power - Rated	Transistor Type	Width	Fall Time	Rise Time (Typ)	Voltage - Gate Trigger (Vgt) (Max)	Current - Drain (Idss) @ Vds (Vgs=0)	Length - Overall	Shell Size - Insert	Printed Circuit Board	Technology	Package Cooled	Current Transfer Ratio (Min)	Weight	Polarity	MOQ	Unit Pack	Automotive	Leadfree Defin	Power (Watts) - Per Port	Height	Length	Matchcode	Standard Leadtime	Rad Hardened	Power - Output	Current Rating (Max)	Vce Saturation (Max) @ Ib, Ic	Tab Width	Type	Logic Type	Voltage - Supply (Vcc/Vdd)	Thermal Resistance @ GPM	SVHC	Tariff No	Noise Figure	Frequency - Max	Voltage - Threshold	Resistance - RDS(On)	Contact Voltage (Max)	Current Drain (Id) - Max	Termination	Number of Pins	Material Finish	Size / Dimension	Card Standard	Series	Gate Charge	Voltage - Supply	Frequency	Input Type	Switching Energy	Td (on/off) @ 25degC	Voltage - Input (Min)	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Current - Collector Pulsed (Icm)	Test Condition	Number of Channels	Power - Average Forward	Manufacturer	DELETED	Current - Peak Pulse (8/20us)	Spg	Number of Units	Diode Configuration	Vce Saturation (Max)	Delay Time - ON	Delay Time - OFF	Current Transfer Ratio (Max)	Polarization	Operating Temperature - Junction	Gain	Voltage - Test	Voltage Rating	Current - Output
3 STW20NM60 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247 Tube MOSFET N-CH 600V 20A TO-247 MOSFET N-Ch 600 Volt 20 Amp MOSFET, N CH, 600V, 20A, TO-247 stmicroelectronics	76	1: ¥19.362	Rail / Tube	±30 V	Through Hole	3TO-247	Enhancement	-65 to 150 °C	600 V	20 A	25 ns	Lead free / RoHS Compliant	290@10V mOhm	Tube	TO-247-3	192W	20 ns	TO-247	Compliant	42 ns	:192W	54nC @ 10V	Through Hole	TO-247	3	MOSFET N-Channel, Metal Oxide	Standard	5V @ 250µA	600V	1500pF @ 25V	20A (Tc)	MOSFET	11 ns	1	600 V	0.29 ohm	Through Hole	Single	497-3263-5	30	192 W	N-Channel	5.15(Max)	11 ns	20 ns	+/- 30 V	20 A	15.75(Max)	20.15(Max)	3	-	TO-247	-	0.0002	N	-	-	-	-	-	-	-	-	-	No	Not Required dB	:20A	Not Required %	Tab	Power MOSFET	-	-	-	:No SVHC (20-Jun-2013)	85423300	Not Required dB	Not Required MHz	:4V	:250mohm	:600V	20 A	:Through Hole	:3	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 STD5NK40ZT4 Trans MOSFET N-CH 400V 3A 3-Pin(2+Tab) DPAK T/R N-CH 400V 4A 1800mOhm TO252-3 MOSFET N-CH 400V 3A DPAK STD5NK40ZT4, N-channel MOSFET Transistor, 3A 400V, 3-Pin TO-252 MOSFET N-Ch 400 Volt 3 Amp Zener SuperMESH MOSFET, N, D-PAK Transistor: N-MOSFET; unipolar; 400V; 3A; 45W; DPAK STMicroelectronics , N沟道 MOSFET, 3 A, Vds=400 V, 3针 TO-252封装 stmicroelectronics	49	1: ¥4.662	Tape & Reel	±30 V	Surface Mount	3DPAK	Enhancement	-55 to 150 °C	400 V	3 A	9.2 ns	Lead free / RoHS Compliant	1800@10V mOhm	Tape and Reel	D-Pak	45W	6 ns	DPAK	Compliant	22.5 ns	45 W	17nC	Gull-wing	DPAK	3	MOSFET N-Channel, Metal Oxide	Standard	4.5V @ 50µA	400V	305pF @ 25V	3A (Tc)	MOSFET	11 ns	1	400 V	1.8 Ω	SMD/SMT	Single	497-2477-2	2500	45 W	N-Channel	6.2mm	11 ns	6 ns	+/- 30 V	4.0A	-	-	-	SuperMESH	TO-252	2.2 S	0.00031	unipolar	2500	2500	NO	RoHS-conform	45W	2.4mm	6.6mm	STD5NK40ZT4	10 weeks	-	-	:3A	-	-	-	NO	400V	2.77K/W	:No SVHC (20-Jun-2013)	85412900	-	-	:3.75V	:1.8ohm	:400V	-	:SMD	:3	:MSL 1 - Unlimited	6.6 x 6.2 x 2.4mm	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:12A	100	1	-	-	-	-	-	-	-	-	-	-	-
2 STS8DNF3LL Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R MOSFET 2N-CH 30V 8A 8-SOIC stmicroelectronics	10	1: ¥17.577	Tape & Reel	±16 V	Surface Mount	8SO N	Enhancement	-55 to 150 °C	30 V	8 A	18 ns	Lead free / RoHS Compliant	20@10V mOhm	Tape and Reel	8-SO	1.6W	32 ns	SOIC	Compliant	21 ns	2000	17nC @ 5V	Gull-wing	SO N	8	2 N-Channel (Dual)	Logic Level Gate	1V @ 250µA	30V	800pF @ 25V	8A	-	11 ns	2	-	20@10V	-	-	497-2470-2	-	-	-	4(Max)	-	-	-	-	5(Max)	1.65(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	STripFET™	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 STGD6NC60HDT4 Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R IGBT 600V 15A 1,9V TO252-3 IGBT 600V 15A 56W DPAK IGBT Transistors PowerMESH IGBT Trans IGBT Chip N-CH 600V 15A 3-Pin (2+Tab) DPAK T/R IGBT Transistors PowerMESH" IGBT stmicroelectronics	10	1: ¥2.73	Cut Tape	±20 V	Surface Mount	3DPAK	N	- 55 C	-	-	12nS	Lead free / RoHS Compliant	-	Tape and Reel	D-Pak	56W	-	DPAK	Compliant	-	56000	100 nA	Gull-wing	DPAK	3	-	-	-	-	-	-	IGBT Transistors	-	-	600V	-	SMD/SMT	Single	497-5112-2	2500	50 W	-	-	-	-	-	-	-	-	-	PowerMESH	-	-	-	-	2500	2500	NO	RoHS-conform	56W	-	-	STGD6NC60HDT4	10 weeks	-	-	-	1.9V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	13.6nC	600V	5nS	Standard	88µJ	76nS	600 V	21ns	15A	15 A	21A	390V, 3A, 10 Ohm, 15V	-	-	-	-	-	-	-	YES	1.9 V	-	-	-	-	-	-	-	-	-
4 STS5PF30L Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R P-CH 30V 5A 55mOhm SO-8 MOSFET P-CH 30V 5A 8-SOIC STS5PF30L, P-channel MOSFET Transistor 5A 30V, 8-Pin SO MOSFET P-Ch 30 Volt 5 Amp MOSFET,Power;P-Ch;VDSS30V;RDS(ON)0.045Ohm;ID5A;SO-8;PD2.5W;VGS+/-16V;gFS1 STMicroelectronics , P沟道 MOSFET, 5 A, Vds=30 V, 8针 SOIC封装 stmicroelectronics	3270	1: ¥7.004	Tape & Reel	±16 V	Surface Mount	8SO N	P	-55 to 150 °C	30 V	5 A	25 ns	Lead free / RoHS Compliant	80@10V mOhm	Tape and Reel	8-SO	2.5W	35 ns	SOIC	Compliant	125 ns	2.5 W	16nC	Gull-wing	SO N	8	MOSFET P-Channel, Metal Oxide	Logic Level Gate	2.5V @ 250µA	30V	1350pF @ 25V	5A (Tc)	MOSFET	-	1	- 30 V	0.08 Ω	SMD/SMT	Quad Drain, Single, Triple Source	497-3231-2	2500	2.5 W	P-Channel	4mm	35 ns	35 ns	+/- 16 V	-5A	5(Max)	1.65(Max)	8	StripFET	SO	13 S	0.002998 oz	P	2500	2500	NO	RoHS-conform	2.5W	1.25mm	5mm	STS5PF30L	10 weeks	No	Not Required dB	-	Not Required %	-	Power MOSFET	YES	-30V	n.s.K/W	-	-	Not Required dB	Not Required MHz	-	-	-	5 A	-	-	-	5 x 4 x 1.25mm	Power MOSFET	-	-	1.2V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	25ns	125ns	10S	P-Channel	+150°C	-	-	-	-
2 STGP19NC60WD Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220 Tube IGBT 600V 40A 125W TO220 IGBT Transistors N Ch 600V 19A stmicroelectronics	10	1: ¥15.164	Rail / Tube	±20 V	Through Hole	3TO-220	N	- 55 C	-	-	-	Lead free / RoHS Compliant	-	Tube	TO-220AB	125W	-	TO-220	Compliant	-	125000	-	Through Hole	TO-220	3	-	-	-	-	-	-	IGBT Transistors	-	-	2.5V @ 15V, 12A	-	Through Hole	Single	497-6027-5	1000	-	-	4.6(Max)	-	-	-	-	10.4(Max)	9.15(Max)	3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Tab	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	53nC	600V	-	Standard	206µJ	25ns/90ns	600 V	31ns	40A	40 A	35A	390V, 12A, 10 Ohm, 15V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB11NM60-1 Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Tube MOSFET N-CH 650V 11A I2PAK MOSFET N-Ch 600 Volt 11 Amp stmicroelectronics	10	1: ¥21.012	Rail / Tube	±30 V	Through Hole	3I2PAK	Enhancement	-65 to 150 °C	600 V	11 A	20 ns	Lead free / RoHS Compliant	450@10V mOhm	Tube	I2PAK	160W	-	I2PAK	Compliant	6 ns	160000	30nC @ 10V	Through Hole	I2PAK	3	MOSFET N-Channel, Metal Oxide	Standard	5V @ 250µA	650V	1000pF @ 25V	11A (Tc)	MOSFET	11 ns	1	600 V	450@10V	SMD/SMT	Single	-	50	160 W	N-Channel	-	11 ns	20 ns	+/- 30 V	11 A	-	-	-	-	-	5.2 S	0.050717 oz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB80NE03L-06-1 Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) I2PAK Tube stmicroelectronics	-		Rail / Tube	±20 V	Through Hole	3I2PAK	Enhancement	-55 to 175 °C	30 V	80 A	40 ns	-	6@10V mOhm	-	-	-	260 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	165 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STS4DNFS30L Trans MOSFET N-CH 30V 4A 8-Pin SO N T/R MOSFET N-CH 30V 4A 8-SOIC stmicroelectronics	10	2500: ¥3.4564	Tape & Reel	±16 V	Surface Mount	8SO N	Enhancement	-55 to 150 °C	30 V	4 A	11 ns	Lead free / RoHS Compliant	55@10V mOhm	Tape and Reel	8-SO	2W	100 ns	SOIC	Compliant	25 ns	2000	9nC @ 5V	Gull-wing	SO N	8	MOSFET N-Channel, Metal Oxide	Diode (Isolated)	1V @ 250µA	30V	330pF @ 25V	4A (Tc)	-	22 ns	1	-	55@10V	-	-	497-3227-2	-	-	-	4(Max)	-	-	-	-	5(Max)	1.65(Max)	8	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 STB80NF03L-04T4 Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R MOSFET N-CH 30V 80A D2PAK MOSFET N-Ch 30 Volt 80 Amp stmicroelectronics	53	1: ¥32.64	Tape & Reel	±20 V	Surface Mount	3D2PAK	Enhancement	-65 to 175 °C	30 V	80 A	30 ns	Lead free / RoHS Compliant	4@10V mOhm	Tape and Reel	D2PAK	300W	270 ns	D2PAK	Compliant	110 ns	300000	110nC @ 4.5V	Gull-wing	D2PAK	3	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1V @ 250µA	30V	5500pF @ 25V	80A (Tc)	MOSFET	95 ns	1	30 V	0.004 ohm	SMD/SMT	Single	497-7952-6	1000	300 W	N-Channel	9.35(Max)	95 ns	270 ns	+/- 20 V	80 A	10.4(Max)	4.6(Max)	2	Si	D2PAK	50 S	-	N	-	-	-	-	-	4.6 mm	10.4 mm	-	-	No	Not Required dB	-	Not Required %	Tab	Power MOSFET	-	-	-	-	-	Not Required dB	Not Required MHz	-	-	-	80 A	-	-	-	-	-	N-channel STripFET	-	-	-	-	-	-	-	-	-	-	-	-	1 Channel	300 W	STMicroelectronics	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 STF16NF25 Trans MOSFET N-CH 250V 14A 3-Pin(3+Tab) TO-220FP Tube N-CH 250V 13A 235mOhm TO220FP MOSFET N-CH 250V 14A TO-220FP STF16NF25, N-channel MOSFET Transistor, 14A 250V, 3-Pin TO-220FP MOSFET N-Channel 650V Pwr Mosfet STMicroelectronics , N沟道 MOSFET, 14 A, Vds=250 V, 3针 TO-220FP封装 stmicroelectronics	282	1: ¥13.056	Rail / Tube	±20 V	Through Hole	3TO-220FP	Enhancement	-55 to 150 °C	250 V	14 A	9 ns	Lead free / RoHS Compliant	235@10V mOhm	Tube	TO-220FP	25W	17 ns	TO-220F	Compliant	35 ns	25 W	18nC	Through Hole	TO-220FP	3	MOSFET N-Channel, Metal Oxide	Standard	4V @ 250µA	250V	680pF @ 25V	14A (Tc)	MOSFET	-	1	250 V	0.235 Ω	Through Hole	Single	-	-	25 W	N-Channel	4.6mm	17 ns	17 ns	+/- 20 V	13A	10.4(Max)	16.4(Max)	3	STripFET	TO-220FP	-	-	-	2000	50	NO	RoHS-conform	25W	16.4mm	10.4mm	STF16NF25	10 weeks	-	-	-	-	Tab	-	NO	250V	5K/W	-	-	-	-	-	-	-	-	-	-	-	10.4 x 4.6 x 16.4mm	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PD57002S Trans MOSFET N-CH 65V 0.25A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) stmicroelectronics	-		Rail / Tube	±20 V	Surface Mount	4PowerSO-10RF (Straight lead)	Enhancement	-65 to 165 °C	65 V	0.25 A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 STB11NK50ZT4 Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R N-CH 500V 10A 520mOhm TO263-3 MOSFET N-CH 500V 10A D2PAK MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH MOSFET, N CH, 500V, 10A, D2PAK stmicroelectronics	330	1: ¥2.40	Tape & Reel	±30 V	Surface Mount	3D2PAK	Enhancement	-55 to 150 °C	500 V	10 A	14.5 ns	Lead free / RoHS Compliant	520@10V mOhm	Tape and Reel	D2PAK	125W	18 ns	D2PAK	Compliant	41 ns	:125W	68nC	Gull-wing	D2PAK	3	MOSFET N-Channel, Metal Oxide	Standard	4.5V @ 100µA	500V	1390pF @ 25V	10A (Tc)	MOSFET	15 ns	1	500 V	520@10V	SMD/SMT	Single	497-2451-2	1000	125 W	N-Channel	9.35(Max)	15 ns	18 ns	+/- 30 V	10A	10.4(Max)	4.6(Max)	2	SuperMESH	-	77 S	0.0002	-	1000	1000	NO	RoHS-conform	125W	-	-	STB11NK50ZT4	14 weeks	-	-	:10A	-	Tab	-	NO	500V	1K/W	:No SVHC (20-Jun-2013)	85412900	-	-	:3.75V	:480mohm	:500V	-	:SMD	:3	:MSL 1 - Unlimited	-	-	-	49 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STB20PF75T4 Trans MOSFET P-CH 75V 20A 3-Pin(2+Tab) D2PAK T/R stmicroelectronics	-		Tape & Reel	±20 V	Surface Mount	3D2PAK	P	-55 to 175 °C	75 V	20 A	20 ns	-	120@10V mOhm	-	-	-	51 ns	-	-	40 ns	-	-	-	-	-	-	-	-	-	-	-	-	13 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP13NK62Z MOS 600V 0.43 OHM stmicroelectronics	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PD55003 Trans MOSFET N-CH 40V 2.5A 4-Pin(2+2Tab) PowerSO-10RF (Formed lead) IC TRANS RF PWR LDMOST PWRSO-10 stmicroelectronics	10	1: ¥55.76	Rail / Tube	±20 V	Surface Mount	4PowerSO-10RF (Formed lead)	Enhancement	-65 to 165 °C	40 V	2.5 A	-	Lead free / RoHS Compliant	-	Tube	10-PowerSO	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	LDMOS	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3W	2.5A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	500MHz	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	17dB	12.5V	40V	50mA
STB160NF3LLT4 Trans MOSFET N-CH 30V 160A 3-Pin(2+Tab) D2PAK T/R MOSFET N-CH 30V 160A D2PAK stmicroelectronics	10	1000: ¥10.9956	Tape & Reel	±15 V	Surface Mount	3D2PAK	Enhancement	-55 to 175 °C	30 V	160 A	50 ns	Lead free / RoHS Compliant	3@10V mOhm	Tape & Reel (TR)	D2PAK	300W	350 ns	-	-	150 ns	-	110nC @ 4.5V	-	-	-	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1V @ 250µA	30V	5500pF @ 25V	160A (Tc)	-	120 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD12NF06L-1 Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube MOSFET N-CH 60V 12A IPAK MOSFET N-Ch 60 Volt 12 Amp stmicroelectronics	5560	2780: ¥2.5391	Rail / Tube	±16 V	Through Hole	3IPAK	Enhancement	-55 to 175 °C	60 V	12 A	10 ns	Lead free / RoHS Compliant	100@10V mOhm	Tube	I-Pak	30W	35 ns	IPAK	Compliant	20 ns	30000	10nC @ 5V	Through Hole	IPAK	3	MOSFET N-Channel, Metal Oxide	Logic Level Gate	2V @ 250µA	60V	350pF @ 25V	12A (Tc)	MOSFET	13 ns	1	60 V	0.1 ohm	Through Hole	Single	-	75	30 W	N-Channel	-	13 ns	35 ns	+/- 16 V	12 A	-	-	-	Si	IPAK	7 S	-	N	-	-	-	-	-	6.2 mm	6.6 mm	-	-	No	-	-	-	-	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	N-channel STripFET	-	-	-	-	-	-	-	-	-	-	-	-	1 Channel	30 W	STMicroelectronics	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 STD35NF06LT4 Trans MOSFET N-CH 60V 35A 3-Pin(2+Tab) TO-252 T/R N-CH 60V 35A 17mOhm TO252-3 MOSFET N-CH 60V 35A DPAK STD35NF06LT4, N-channel MOSFET Transistor 35A 60V, 3-Pin TO-252 MOSFET N-Ch 60 Volt 35 Amp MOSFET, N CH, 60V, 35A, DPAK MOSFETN35A60VTO252 STMicroelectronics , N沟道 MOSFET, 35 A, Vds=60 V, 3针 TO-252封装 stmicroelectronics	2500	2500: ¥4.2724	Tape & Reel	±15 V	Surface Mount	3TO-252	Enhancement	-55 to 175 °C	60 V	35 A	20 ns	Lead free / RoHS Compliant	17@10V mOhm	Tape and Reel	D-Pak	80W	100 ns	DPAK	Compliant	40 ns	80 W	33nC	Gull-wing	TO-252	3	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1V @ 250µA	60V	1700pF @ 25V	35A (Tc)	MOSFET	-	1	60 V	0.017 Ω	SMD/SMT	Single	497-7965-1	2500	80 W	N-Channel	6.2mm	20 ns	100 ns	+/- 16 V	35A	-	-	-	StripFET	TO-252	28 S	0.0002	N	2500	2500	NO	RoHS-conform	80W	2.4mm	6.6mm	STD35NF06LT4	10 weeks	No	Not Required dB	:35A	Not Required %	-	Power MOSFET	YES	60V	1.88K/W	:No SVHC (20-Jun-2013)	85412900	Not Required dB	Not Required MHz	:1V	:14mohm	:60V	35 A	:SMD	:3	:MSL 1 - Unlimited	6.6 x 6.2 x 2.4mm	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STD7NB20 Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) DPAK Tube stmicroelectronics	-		Rail / Tube	±30 V	Surface Mount	3DPAK	Enhancement	-65 to 150 °C	200 V	7 A	10 ns	-	400@10V mOhm	-	-	-	15 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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STMicroelectronics N.V.- IGBTs

IGBTs - 型号列表

Rds On (Max) @ Id, Vgs

Current - Peak Pulse (10/1000us)

Power - Max

Delay to 1st Tap

Power Dissipation (Max)

Propagation Delay (Max)

Gate Charge (Qg) (Max) @ Vgs

Switch Time (Ton, Toff) (Max)

Current - Continuous Drain (Id) @ 25degC

On-State Resistance (Max)

Input Capacitance (Ciss) (Max) @ Vds

Package / Case

Other Names

Power - Rated

Voltage - Breakdown

Vce(on) (Max) @ Vge, Ic

Current - Drain (Idss) @ Vds (Vgs=0)

Package Quantity

Supplier Device Package

Standard Package Name

Fall Time

Fall Time (Typ)

Rise Time (Typ)

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Width

Current Transfer Ratio (Min)

Package Cooled

Operating Temperature

Power (Watts) - Per Port

Matchcode

Factory Pack Quantity

Current Rating (Max)

Shell Size - Insert

Voltage - Supply (Vcc/Vdd)

Height

Length

Technology

Thermal Resistance @ GPM

Vgs (Max)

Resistance - RDS(On)

Contact Voltage (Max)

Current Drain (Id) - Max

Weight

Standard Package

FET Type

FET Feature

Transistor Type

Voltage - Threshold

Voltage - Gate Trigger (Vgt) (Max)

Packaging

Length - Overall

Polarity

Channel Type

Printed Circuit Board

MOQ

Unit Pack

Size / Dimension

Gate Charge

Product Category

Tariff No

Power - Output

Number of Elements

Vce Saturation (Max) @ Ib, Ic

Lead Style

Termination

Mounting Type

Mounting Style

Material Finish

Number of Positions

Configuration

Logic Type

Standard Leadtime

Series

Frequency

Switching Energy

Voltage - Supply

Td (on/off) @ 25degC