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Toshiba Corporation

Toshiba Corporation- Discrete Semiconductors

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality and reliability makes it a trusted partner for global electronics manufacturers.

03

Discrete Semiconductors - 型号列表

39 parts in total

Input Capacitance (Ciss) (Max) @ Vds

Current - Drain (Idss) @ Vds (Vgs=0)

Package / Case

Other Names

On-State Resistance (Max)

Current - Continuous Drain (Id) @ 25degC

Height

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

Vce(on) (Max) @ Vge, Ic

Drain to Source Voltage (Vdss)

Supplier Device Package

Series

Power Dissipation (Max)

Vgs(th) (Max) @ Id

Voltage - Breakdown

Current - Peak Pulse (10/1000us)

Power - Rated

Rds On (Max) @ Id, Vgs

Package Cooled

Mounting Type

Operating Temperature

FET Feature

Power - Max

Length

Width

Size / Dimension

Standard Package

Configuration

Power - Average Forward

Packaging

RoHS

FET Type

Transistor Type

Voltage - Threshold

Current Rating (Max)

Resistance - RDS(On)

Contact Voltage (Max)

Weight

Number of Pins

Number of Positions

Rise Time (Typ)

Voltage - Cutoff (VGS off) @ Id

Factory Pack Quantity

Number of Channels

Current Transfer Ratio (Min)

Mounting Style

Channel Type

Termination

Package Quantity

Fall Time

Gate Charge

Voltage - Gate Trigger (Vgt) (Max)

Delay to 1st Tap

Switch Time (Ton, Toff) (Max)

Input Capacitance

Mfr Part #Quantity AvailablePriceMounting TypeConfigurationInput Capacitance (Ciss) (Max) @ VdsPackage / CaseStandard PackageOperating TemperatureRoHSPackagingVgs (Max)Transistor TypeCurrent - Continuous Drain (Id) @ 25degCFET TypePower - RatedVce(on) (Max) @ Vge, IcDrain to Source Voltage (Vdss)Current - Drain (Idss) @ Vds (Vgs=0)Mounting StyleSupplier Device PackagePower - MaxOn-State Resistance (Max)HeightVgs(th) (Max) @ IdVoltage - BreakdownCurrent - Peak Pulse (10/1000us)Other NamesFactory Pack QuantityPower - Average ForwardLengthSeriesChannel TypeManufacturerPower Dissipation (Max)Gate Charge (Qg) (Max) @ VgsPackage CooledFET FeatureRds On (Max) @ Id, VgsNumber of ElementsNumber of PositionsCard StandardVoltage - Gate Trigger (Vgt) (Max)WidthSize / DimensionInput CapacitanceVoltage - Cutoff (VGS off) @ IdNumber of PinsProduct CategoryNumber of ChannelsTechnologySVHCTariff NoVoltage - ThresholdCurrent Rating (Max)Resistance - RDS(On)Contact Voltage (Max)WeightTerminationMaterial FinishRise Time (Typ)Current Transfer Ratio (Min)Package QuantityFall TimeGate ChargeDelay to 1st TapSwitch Time (Ton, Toff) (Max)ProductTypeStandard Package NameEU RoHSLead StyleOutputFall Time (Typ)Propagation Delay (Max)Current Transfer Ratio (Max)Voltage - Forward (Vf) (Max) @ IfPropagation Delay tpLH / tpHL (Max)Number of ContactsCurrent - Peak Pulse (8/20us)Current Drain (Id) - MaxVoltage - Breakdown (V(BR)GSS)
TIM6472-45SL
TIM6472-45SL

TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 125W Trans JFET 15V 20A 3-Pin 2-16G1B

toshiba

-ScrewSingle-32-16G1BTrays, Rail / Tube-65 to 175 °C---5 V-------------15 V20000 mA-------------------------------------------------------
TIM5964-4UL
TIM5964-4UL

TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,23W Trans JFET 15V 3.5A 3-Pin 2-11D1B

toshiba

-ScrewSingle-32-11D1BTrays-65 to 175 °C---5 V-------------15 V3500 mA-------------------------------------------------------
TPCP8103-H(TE8>
TPCP8103-H(TE8>

Trans MOSFET P-CH 40V 4.8A 8-Pin PS T/R

toshiba

--------------------------------------------------------------------------------
SSM3J118TU(TE85L)
2
SSM3J118TU(TE85L)

MOSFET Vds=-30V Id=-1.4A 3Pin MOSF 30V 1.4A UFM MOSFET P-CH 30V 1.4A UFM

Toshiba

1001: ¥3.264*Single137pF @ 15V3-SMD, Flat Leads3,000+ 150 CLead free / RoHS CompliantTape & Reel (TR)20 VP-Channel1.4A (Ta)MOSFET P-Channel, Metal Oxide800 mW- 30 V30V- 1.4 ASMD/SMTUFM800mW360 mOhms0.7 mm---SSM3J118TU(TE85L)CT3000800 mW2 mmSSM3J118EnhancementToshiba---Logic Level Gate, 4V Drive240 mOhm @ 650mA, 10V---------MOSFET1 ChannelSi----------1.5 S / 0.8 S-----MOSFET Small SignalSmall Signal-------------
SSM6K18TU(TE85L,F)
SSM6K18TU(TE85L,F)

MOSFET Vds=20V Id=4A 6Pin MOSFET, N CH, 4A, 20V, SSOTFMLP

Toshiba

101: ¥1.2172-Single-ES-6-:150°CRoHS CompliantReel:4VN-Channel:4A-500 mW20 V:20V4 AThrough Hole--------3000-----:500mW---34 mOhms--------:6MOSFET--:No SVHC (20-Jun-2013)85412900:1.1V:4A:40mohm:20V0.0005:SMD:-----------------------
TPC6006-H(TE85L,F)
3
TPC6006-H(TE85L,F)

MOSFET MOSFET N-Ch 40V 3.9A MOSFET N-CH 40V 3.9A VS6 2-3T1A TPC6006-H(TE85L,F), N-channel MOSFET Transistor 3.9A 40V, 6-Pin VS MOSFET, N CH, 3.9A, 40V, TSOP6

Toshiba

101: ¥1.836Surface MountQuad Drain, Single251pF @ 10VSOT-23-6 Thin, TSOT-23-63,000+150 °CCompliantTape & Reel (TR)±20 V:N Channel3.9A (Ta)MOSFET N-Channel, Metal Oxide--40V--VS-6 (2.9x2.8)-0.075 Ω0.7mm2.3V @ 1mA40 V3.9 A---2.9mm-Enhancement-2.2 W4.4nC @ 10VVSLogic Level Gate75 mOhm @ 1.9A, 10V16Power MOSFET-1.6mm2.9 x 1.6 x 0.7mm--:6---:No SVHC (20-Jun-2013)85412900:2.3V:3.9A:75mohm:40V0.0004:SMD:-----------------------
TPC8018-H(TE12L,Q)
TPC8018-H(TE12L,Q)

MOSFET PW TR N-Ch 30V 18A 1.9W 3.5mOhms Trans MOSFET N-CH 30V 18A 8-Pin SOP T/R TPC8018-H(TE12L,Q), N-channel MOSFET Transistor, 18A 30V, 8-Pin SOP

Toshiba

52675: ¥11.1384Surface MountQuad Drain, Single, Triple Source2265 pF V @ 10--+150 °CCompliantTape and Reel±20 V----------0.005 Ω1.5mm-30 V18 A-----Enhancement-1.9 W21 nC V @ 5, 38 nC V @ 10SOP--18Power MOSFET--------------------SOP------SOICCompliantGull-wing----------
TLP832(F)
2
TLP832(F)

Photointerrupter Transmissive 5mm Phototransistor 4-Pin PWB Photointerrupter Transistor 5mm Gap 4pin Toshiba 通孔安装 槽形光电开关 , 晶体管 输出, 4针 PWB

toshiba

826710: ¥7.0992PCB Through Hole--------------------------------PWB----------4------------15µs-PWB---------Infrared LED, Phototransistor15µs15µs100%1.3V15µs4---
2SK4103(TE16L1,NQ)
2SK4103(TE16L1,NQ)

MOSFET N-CH 500V 5A PW-MOLD 2SK4103(TE16L1,NQ), N-channel MOSFET Transistor 5A 500V, 3-Pin PW Mold

Toshiba

881810: ¥6.6572Surface MountSingle---+150 °C-------------1.5 Ω2.3mm-500 V5 A---6.5mm-N-40 W16 nC V @ 10PW Mold--13Power MOSFET-5.5mm6.5 x 5.5 x 2.3mm-------------------------------------
2SK3566(STA4,Q,M)
6
2SK3566(STA4,Q,M)

MOSFET N-CH 900V 2.5A TO-220SIS MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm MOSFET, N, 900V, TO-220SIS

Toshiba

7961: ¥6.405Through HoleSingle470pF @ 25VTO-220-3 Full Pack50- 55 CRoHS CompliantTube:10VN-Channel2.5A (Ta)MOSFET N-Channel, Metal Oxide40 W900 V900V2.5 AThrough HoleTO-220SIS40W--4V @ 1mA---------:40W12nC @ 10V-Standard6.4 Ohm @ 1.5A, 10V---30 V----:3MOSFET--:No SVHC (20-Jun-2013)85412900:4V:2.5A:6.4ohm:900V0.0017:Through Hole:-20 ns2 S-30 ns12 nC--------------:7.5A--
2SK4003(Q)
2
2SK4003(Q)

MOSFET N-CH 600V 3A PW-MOLD 2SK4003(Q), N-channel MOSFET Transistor 3A 600V, 3-Pin PW Mold2

Toshiba

126105: ¥4.6512Through HoleSingle600 pF V @ 25--+150 °C--±30 V----------2.2 Ω5.5mm-600 V3 A---6.5mm-Enhancement-20 W15 nC V @ 10PW Mold2--13Power MOSFET-2.3mm6.5 x 2.3 x 5.5mm-------------------------------------
TK7A60W,S4VX
2
TK7A60W,S4VX

MOSFET N CH 600V 7A TO-220SIS MOSFET N-Ch 7A 30W FET 600V 490pF 15nC TK7A60W,S4VX

Toshiba

1050: ¥6.5096Through HoleSingle490pF @ 300VTO-220-3 Full Pack50- 55 CRoHS CompliantTube30 VN-Channel7A (Ta)MOSFET N-Channel, Metal Oxide30 W600 V600V7 AThrough HoleTO-220SIS30W500 mOhms15 mm3.7V @ 350µA--TK7A60WS4VX5030 W10 mmTK7A60WEnhancementToshiba-15nC @ 10V-Super Junction600 mOhm @ 3.5A, 10V---30 V------1 ChannelSi---------18 ns--7 ns15 nC55 ns40 ns---------------
SSM5N15FU(TE85L,F)
2
SSM5N15FU(TE85L,F)

MOSFET N CH 30V, 100MA USV MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1

Toshiba Semiconductor and Storage

60003000: ¥0.5848Surface MountDual7.8pF @ 3V6-TSSOP (5 Lead), SC-88A, SOT-3533,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel100mAMOSFET N-Channel, Metal Oxide200 mW30 V30V100 mASMD/SMTUSV200mW4 Ohms0.9 mm1.5 V--SSM5N15FU(TE85LF)CT3000200 mW2 mmSSM5N15-Toshiba---Logic Level Gate4 Ohm @ 10mA, 4V----------2 ChannelSi--------------180 ns50 ns---------------
2SK208-Y(TE85L,F)
3
2SK208-Y(TE85L,F)

MOSFET N-CH 50V S-MINI JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Toshiba Semiconductor and Storage

38651: ¥0.8261Surface MountSingle8.2pF @ 10VTO-236-3, SC-59, SOT-23-33,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel6.5 mAMOSFET N-Channel, Metal Oxide100 mW- 5 V50V6.5 mASMD/SMTS-Mini100mW--- 30 V--2SK208-Y(TE85LF)TR3000100 mW-2SK208-Toshiba---*----- 30 V--8.2 pF400mV @ 100nA-----------------------------------
2SK880GRTE85LF
2
2SK880GRTE85LF

MOSF N CH 50V 100MW USM JFET N-Ch Junction FET 10mA -50V VGDS JFET N-CH 50V 100MW USM

Toshiba Semiconductor and Storage

82241: ¥4.216Surface MountSingle13pF @ 10VSC-70, SOT-3233,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel14 mAN-Channel100 mW- 1.5 V-6.5mA @ 10VSMD/SMTSC-70100mW--- 50 V--2SK880GRTE85LFCT3000100 mW-2SK880-Toshiba-----------13 pF1.5V @ 100nA---------------------------------14 mA50V
2SK879-GR(TE85L,F)
2
2SK879-GR(TE85L,F)

JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Toshiba Semiconductor and Storage

2401: ¥1.554Surface MountSingle8.2pF @ 10VSC-70, SOT-3233,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel6.5 mAN-Channel100 mW- 5 V10 V2.6mA @ 10VSMD/SMTUSM100mW--- 30 V--2SK879-GR(TE85LF)TR3000100 mW-2SK879-Toshiba--------- 30 V--8.2 pF400mV @ 100nA-----------------------------------
2SK879-Y(TE85L,F)
2
2SK879-Y(TE85L,F)

JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Toshiba Semiconductor and Storage

5741: ¥1.43Surface MountSingle8.2pF @ 10VSC-70, SOT-3233,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel6.5 mAN-Channel100 mW- 5 V10 V1.2mA @ 10VSMD/SMTUSM100mW--400mV @ 100nA--2SK879-Y(TE85LF)TR3000100 mW-2SK879-Toshiba--------- 30 V--8.2 pF400mV @ 100nA-----------------------------------
2SK3320-BL(TE85L,F
2
2SK3320-BL(TE85L,F

JFET DUAL N-CH USV JFET Junction FET N-Ch x2 1.2V to 14mA 10mA

Toshiba Semiconductor and Storage

2021: ¥6.6255Surface MountDual13pF @ 10V6-TSSOP (5 Lead), SC-88A, SOT-3533,000-Lead free / RoHS CompliantTape & Reel (TR)-N-Channel14 mAN-Channel200 mW- 1.5 V10 V6mA @ 10VSMD/SMTUSV200mW--- 30 V--2SK3320-BL(TE85LFTR-200 mW-2SK3320-Toshiba--------- 30 V--13 pF200mV @ 100nA-----------------------------------
TPCA8006-H(TE12L,Q,M)
TPCA8006-H(TE12L,Q,M)

TPCA8006-H(TE12L,Q,M), N-channel MOSFET Transistor 18A 100V, 8-Pin SOP Advanced

Toshiba

90185: ¥6.5076Surface MountQuad Drain, Single, Triple Source780 pF V @ 10--+150 °C--±20 V----------0.067 Ω0.95mm-100 V18 A---5mm-Enhancement-45 W12 nC V @ 10SOP Advanced--18Power MOSFET-5mm5 x 5 x 0.95mm-------------------------------------
TPC8114(TE12L,Q)
TPC8114(TE12L,Q)

TPC8114(TE12L,Q), P-channel MOSFET Transistor 18A 30V, 8-Pin SOP

Toshiba

73485: ¥7.99Surface MountQuad Drain, Single, Triple Source7480 pF V @ 10--+150 °C--±20 V----------0.005 Ω1.5mm-30 V18 A---5mm-Enhancement-1.9 W180 nC V @ 10SOP--18Power MOSFET-4.4mm5 x 4.4 x 1.5mm-------------------------------------
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