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DN2540 MOSFET Series
MOSFET 400V 25Ohm
The DN2540 series from Microchip Technology Inc. is a lineup of small signal N-channel MOSFETs designed for voltages up to 400V and featuring a 25Ω on-resistance. These MOSFETs are compact, making them ideal for space-constrained applications while still delivering respectable performance.
If you're working on circuits that require precise control over switching and minimal power loss, these MOSFETs are a solid choice. They’re commonly found in applications such as battery chargers, LED drivers, and switching regulators where voltage regulation and efficient power conversion are critical. One thing worth noting is their low on-resistance, which helps minimize power dissipation during operation, making them particularly useful in high-frequency switching applications.
Engineers tend to reach for this series when they need a reliable, low-cost solution for small signal switching. The TO-92 package ensures easy integration into existing designs, and the wide availability of different part numbers allows for flexibility in selecting the exact fit for specific requirements. Whether you're designing a portable device or a compact power supply, the DN2540 series offers a robust option that balances performance with cost-effectiveness.
Frequently Asked Questions
DN2540 MOSFET - Part List
20 parts in total| Mfr Part # | Quantity Available | Price | Category | On-State Resistance (Max) | Vgs (Max) | Channel Type | Operating Temperature | Vce(on) (Max) @ Vge, Ic | Factory Pack Quantity | RoHS | Transistor Type | Number of Channels | Current - Continuous Drain (Id) @ 25degC | Packaging | Mounting Style | Package / Case | Technology | Manufacturer | Fall Time | Rise Time (Typ) | Delay to 1st Tap | Power - Average Forward | Switch Time (Ton, Toff) (Max) | Width | Height | Length | Configuration | Number of Elements | Power Dissipation (Max) | Package Quantity | Mounting Type | Product | Number of Positions | Standard Package | FET Type | FET Feature | Power - Max | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Standard Package Name | EU RoHS | Voltage - Breakdown | Current - Peak Pulse (10/1000us) | Power - Rated | Current - Drain (Idss) @ Vds (Vgs=0) | Type | Polarity | Lead Style | Delay Time - ON | Output Function | Delay Time - OFF | Voltage - Supply | Resistance - Input | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Resistance - Post Trip (R1) (Max) | Number of Pins | Size / Dimension | Function | Variation Suffix | Other Specifications | Rad Hardened | Package Cooled |
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| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 1000 | TO-92 | - | - | 3 | - | - | - | - | - | - | - | - | TO-92 | Not Compliant | 400 | 0.12 | - | - | - | - | Formed | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 1600 | SOT-89 | - | - | 4 | - | - | - | - | - | - | - | - | SOT-89 | Not Compliant | 400 | 0.17 | - | - | - | - | Flat | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25000@0V | ±20 | Depletion | 150 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | 15000 | TO-220 | - | - | 3 | - | - | - | - | - | - | - | - | TO-220 | Not Compliant | 400 | 0.5 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25 ohm | �20 V | Depletion | -55C to 150C | 400 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 1 | - | - | Through Hole | - | 3 +Tab | - | - | - | - | - | - | - | - | - | - | - | - | 15 W | 0.5 A | Power MOSFET | N | - | - | - | - | - | - | - | - | - | - | - | - | - | - | No | TO-220 | ||
DN2540N3-G MOSFET N-CH 400V 120MA 3TO-92 Small Signal FET TO-92 N 400 V, DN2540N3-G, Microchip Microchip , N沟道 MOSFET, 120 mA, Vds=400 V, 3针 TO-92封装 MOSFET 400V 25Ohm Microchip Technology | 10 | 1: ¥8.4739 | - | 25 Ohms | 20 V | N | +150 °C | 400 V | 1000 | RoHS Compliant | Si | 1 Channel | 120mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 0.165in | 0.21in | 5.2mm | Single | 1 | 1 W | TO-92 | * | - | - | 1,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | 1 | 150 mA | FET | N | - | 10 ns | 消耗 | 15 ns | 400 V | 25 Ω | 3.5V | ±20 V | 25 Ohm@ 120 mA | 3 | 0.205 x 0.165 x 0.21in | Y | Depletion mode | 400 V | - | - |
DN2540N5-G MOSFET N-CH 400V 500MA 3TO-220 Small Signal FET TO-220 N 400 V, DN2540N5-G, Microchip Microchip , N沟道 MOSFET, 500 mA, Vds=400 V, 3针 TO-220封装 MOSFET 400V 25Ohm Microchip Technology | 500 | 1: ¥8.84 | - | 25 Ohms | 20 V | N | +150 °C | 400 V | 50 | RoHS Compliant | Si | 1 Channel | 500mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 15 W | 10 ns | 0.19in | 0.65in | 10.6mm | Single | 1 | 15 W | TO-220 | * | - | - | 50 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 15W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | 15 | 150 mA | - | N | - | 10 ns | 消耗 | 15 ns | 400 V | 25 Ω | 3.5V | ±20 V | 25 Ohm@ 120 mA | 3 | 0.42 x 0.19 x 0.65in | Y | Depletion mode | 400 V | - | - |
DN2540N3-G-P003 MOSFET N-CH 400V 120MA 3TO-92 MOSFET N-Channel MOSFET 400V 0.12A 3P TO-92 Microchip Technology | 20000 | 1: ¥5.168 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120mA (Tj) | * | Through Hole | * | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | * | MOSFET Small Signal | - | 2,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| 10 | 1: ¥40.2094 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 170mA (Tj) | * | SMD/SMT | * | Si | Microchip Technology | 15 ns | 15 ns | 15 ns | 1.6 W | 10 ns | 2.6 mm | 1.6 mm | 4.6 mm | Single | - | - | - | * | MOSFET Small Signal | - | 2,000 | MOSFET N-Channel, Metal Oxide | Depletion Mode | 1.6W | 25 Ohm @ 120mA, 0V | 400V | 300pF @ 25V | * | - | - | - | - | - | - | FET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 0 | - | 25 Ohms | - | - | - | 400 V | 2000 | RoHS Compliant | 1 N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||
| 0 | - | 25 Ohms | 20 V | Depletion | + 150 C | 400 V | 2000 | RoHS Compliant | N-Channel | 1 Channel | 120 mA | Reel | Through Hole | TO-92-3 | Si | Microchip Technology | 20 ns | 15 ns | 15 ns | 1 W | 10 ns | 4.19 mm | 5.33 mm | 5.21 mm | Single | - | - | - | - | MOSFET Small Signal | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |


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