JSCJ · Discrete semiconductors
| Parameter | 1N4007 | 1N4007 | Engineering note |
|---|---|---|---|
| Operating junction temperature range | -65 °C to +150 °C | -55 °C to +150 °C | The target does not cover source operation from -65 °C to below -55 °C. |
| Maximum reverse current | 1.0 uA at 25 °C and 50 uA at 100 °C | 5 uA at 25 °C and 50 uA at 100 °C | The target has a higher room-temperature leakage limit; the 100 °C limit is the same. |
| Lifecycle | The exact non-G 1N4007 is listed as discontinued | Current exact 1N4007 datasheet | The source document lists the non-G exact MPN as discontinued while the lead-free onsemi ordering codes remain current. |
FAE documentary review accepted: both exact 1N4007 parts are 1 A / 1000 V general-purpose rectifiers in DO-41 with the cathode indicated by the band. Both specify 30 A non-repetitive surge current and 1.1 V maximum forward voltage at 1 A. The target narrows the low-temperature limit and raises the 25 C leakage maximum, so low-temperature and high-impedance leakage applications need explicit review. Document review only; not bench, reliability or production qualified.

