1N5819
JSCJ · Discrete semiconductors
VerifiedFAE reviewed
| Parameter | 1N5819 | 1N5819 | Engineering note |
|---|---|---|---|
| Operating junction temperature range | -65 °C to +125 °C | -55 °C to +125 °C | The target does not cover source operation from -65 °C to below -55 °C. |
| Non-repetitive forward surge current | 25 A | 30 A | The target specifies a higher 8.3 ms single half-sine surge rating. |
| Reverse leakage test temperature | 10 mA maximum at +100 °C | 10 mA maximum at +125 °C | The target states the same maximum leakage at a higher junction temperature. |
FAE documentary review accepted: both exact 1N5819 parts are 1 A / 40 V Schottky rectifiers in DO-41 with the cathode indicated by the band. Both specify 0.60 V maximum forward voltage at 1 A and 1 mA maximum room-temperature reverse leakage. The target has the same high-temperature current limit with a higher +125 C test temperature and a higher surge rating, but its low-temperature limit is -55 C rather than -65 C. Document review only; not bench, reliability or production qualified.
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