BAT54C
UMW · Discrete semiconductors
VerifiedFAE reviewed
| Parameter | BAT54CLT1G | BAT54C | Engineering note |
|---|---|---|---|
| Power dissipation and thermal resistance | 225 mW; 508 C/W at minimum pad and 311 C/W at a 1 inch square pad | 200 mW; 500 C/W | The target publishes lower power dissipation and does not state the test-board condition. Thermal headroom must be recalculated. |
| Maximum junction temperature | +150 C | +125 C | The target reduces the maximum junction temperature by 25 C. |
| Maximum forward voltage at 100 mA | 0.80 V | 1.00 V | The target has higher worst-case conduction loss at the highest published forward-current point. |
| Non-repetitive surge-current test condition | 600 mA for tp < 10 ms | 600 mA for t < 1 s | The documents state different pulse widths. Retain the application's original 10 ms or shorter qualification envelope unless bench evidence supports a longer pulse. |
FAE documentary review accepted for the exact onsemi BAT54CLT1G and UMW BAT54C order codes. Both are 30 V, 200 mA dual common-cathode Schottky diodes in SOT-23 with pins 1 and 2 as anodes and pin 3 as the common cathode; 600 mA non-repetitive surge, 2 uA maximum reverse current at 25 V, 10 pF maximum capacitance and 5 ns maximum reverse recovery are published for both. The target has lower power and junction-temperature ratings and a higher worst-case VF at 100 mA. Document review only; not bench, reliability or production qualified.
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