MMBT2222A
UMW · Discrete semiconductors
VerifiedFAE reviewed
| Parameter | MMBT2222ALT1G | MMBT2222A | Engineering note |
|---|---|---|---|
| Power dissipation and thermal-resistance test condition | 225 mW at 556 C/W on FR-5 board; 300 mW at 417 C/W on alumina substrate | 300 mW at 417 C/W without a stated board or substrate | The target numbers match the source alumina-substrate condition, but the target document does not identify the measurement environment. Do not assume the 300 mW rating on an arbitrary PCB. |
| Minimum DC current gain | 35 at IC = 0.1 mA; 100 at IC = 150 mA; 40 at IC = 500 mA | 40 at IC = 0.1 mA; 100 at IC = 150 mA; 42 at IC = 500 mA | The target minimum gain is higher at the low- and high-current points. |
| Order-code and gain rank | MMBT2222ALT1G, SOT-23, 3000-piece tape and reel | UMW MMBT2222A, SOT-23, 3000-piece tape and reel, available marked ranks 100-200 and 200-300 | The UMW order code does not select a gain rank. Rank-sensitive designs must control the received marking or add incoming inspection. |
FAE documentary review accepted for the exact onsemi MMBT2222ALT1G and UMW MMBT2222A order codes. Both are 40 V, 600 mA NPN transistors in SOT-23 with pin 1 BASE, pin 2 EMITTER and pin 3 COLLECTOR; 75 V VCBO, 6 V VEBO, 300 mW at 417 C/W, 150 C junction temperature and matching saturation-voltage limits. The UMW datasheet does not identify the thermal test board and does not bind its order code to a gain rank. Document review only; not bench, reliability or production qualified.
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