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Discrete IGBTs

onsemi- Discrete IGBTs

onsemi (formerly ON Semiconductor) is a premier supplier of high-performance, energy-efficient silicon solutions for green electronics, headquartered in Phoenix, Arizona, USA. Founded in 1999 as a spin-off from Motorola's semiconductor division, it has grown into a global innovator. The core business covers power management, signal processing, logic, discrete, and custom semiconductor devices for automotive, industrial, communications, computing, consumer, medical, and military/aerospace applications. Its product portfolio includes power discrete and modules such as MOSFETs, IGBTs, and EliteSiC silicon carbide devices, along with power management ICs like LDOs, DC-DC converters, and controllers. In signal management, it offers operational amplifiers, comparators, voltage references, and data converters. Through the Catalyst Group acquisition, the company provides programmable memory products like EEPROM, Flash, NVRAM, and digital potentiometers. Sensor offerings include CMOS image sensors, LiDAR, ultrasonic, and proximity sensors for ADAS and smart sensing. onsemi operates a worldwide network of manufacturing facilities, design centers, and sales offices across North America, Europe, and Asia-Pacific. In 2009, it reported revenues of $1.769 billion, and as of 2024, it is a Fortune 500 company and a top-20 global semiconductor supplier, with a strong leadership position in automotive and industrial power semiconductors.

Discrete IGBTs - 型号列表

2,754 parts in total

Mfr Part #	Quantity Available	Price	RoHS	Packaging	Package / Case	Operating Temperature	Vce(on) (Max) @ Vge, Ic	Configuration	Power - Rated	Transistor Type	Rds On (Max) @ Id, Vgs	Current - Drain (Idss) @ Vds (Vgs=0)	Delay to 1st Tap	Mounting Style	Voltage - Gate Trigger (Vgt) (Max)	Mounting Type	Mechanical Life	Standard Package	Supplier Device Package	Product Category	Power - Max	Number of Positions	Fall Time	Rise Time (Typ)	Factory Pack Quantity	Vgs (Max)	Voltage - Breakdown	Power Dissipation (Max)	Channel Type	Other Names	Standard Package Name	Lead Style	Package Quantity	FET Type	FET Feature	Number of Elements	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Vgs(th) (Max) @ Id	On-State Resistance (Max)	Current - Peak Pulse (10/1000us)	Width	Voltage - Supply	Size / Dimension	Type	Operating Temperature - Junction	EU RoHS	SVHC	Tariff No	Delay Time - ON	Delay Time - OFF	Voltage - Threshold	Resistance - RDS(On)	Current Transfer Ratio (Max)	Current - Peak Pulse (8/20us)	Switch Time (Ton, Toff) (Max)	Height	Length	Weight	Polarization	Number of Pins	Package Cooled	Material Finish	Polarity	Card Standard	Length - Overall	Shell Size - Insert	Printed Circuit Board	Gate Charge (Qg) (Max) @ Vgs	DC Resistance (DCR) - Primary	Rad Hardened	Noise Figure	Power - Output	Frequency - Max	Current Drain (Id) - Max	Vce Saturation (Max) @ Ib, Ic	Voltage - Input (Min)	Current Transfer Ratio (Min)	Termination	Contact Voltage (Max)	Depth	Tape Width - Max	SMD Marking	Temperature - Test	Power - Peak Pulse	Voltage - Clamping	Power Line Protection	Capacitance @ Frequency	Applications	Input Type	Td (on/off) @ 25degC	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Current - Collector Pulsed (Icm)	Test Condition	Part # Aliases	Connector - Voltage Input	Channels	Current - Surge	Current - Output	Bidirectional Channels	Voltage - Supply (Min)	Current - Reverse Leakage @ Vr	Termination Style	Series	Port Direction	Vce Saturation (Max)	Current Rating (Max)	Tab Width	Unidirectional Channels
7 2N7000G Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bulk MOSFET N-CH 60V 200MA TO-92 2N7000G, N-channel MOSFET Transistor 0.2A 60V, 3-Pin TO-92 MOSFET 60V 200mA N-Channel MOSFET, N, 60V, 0.2A, TO-92 MOSFET;N-Ch;VDSS60VDC;RDS(ON)5Ohms;ID200mA;TO-92(TO-226);PD350mW;-55degc ON Semiconductor , N沟道 MOSFET, 200 mA, Vds=60 V, 3针 TO-92封装 on semiconductor	400	18: ¥3.808	Lead free / RoHS Compliant	Bulk	3TO-92	-55 to 150 °C	60 V	Single	0.35 W	N-Channel	5000@10V mOhm	200 mA	10 ns	Through Hole	+/- 20 V	Through Hole	-	Boxed, Bulk	TO-92-3	MOSFET	350mW	3	-	-	1000	±20 V	60 V	0.35 W	Enhancement	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	1	60V	60pF @ 25V	200mA (Ta)	3V @ 1mA	5 Ω	0.2 A	4.19mm	-	5.2 x 4.19 x 5.33mm	Small Signal	+150°C	-	:No SVHC (20-Jun-2013)	85331000	10ns	10ns	:3V	:5ohm	100Micromhos	:500mA	10(Max) ns	5.33mm	5.2mm	0.27	N-Channel	:3	TO-92	:MSL 1 - Unlimited	N	Small Signal	-	-	-	-	-	No	Not Required dB	Not Required dB	Not Required MHz	0.2 A	Not Required %	-	0.0001 S	:Through Hole	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:S(1)G(2)D(3)	-	-	-	-	-	-	-	-	-	-	-	-	-
10 2N7002LT1G Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R MOSFET N-CH 60V 115MA SOT-23 2N7002LT1G, N-channel MOSFET Transistor 0.115A 60V, 3-Pin SOT-23 MOSFET, N, SOT-23 N CHANNEL MOSFET, 60V, 115mA SOT-23, FULL REEL MOSFET;N-Ch;VDSS60VDC;RDS(ON)7.5Ohms;ID+/-115mA;SOT-23(TO-236);PD225mW;-55 ON Semiconductor , N沟道 MOSFET, 115 mA, Vds=60 V, 3针 SOT-23封装 MOSFET 60V 115mA N-Channel on semiconductor	283204	100: ¥0.68	Lead free / RoHS Compliant	Tape and Reel	3SOT-23	-55 to 150 °C	60V	Single	-	:N Channel	7500@10V mOhm	±115mA	40(Max) ns	-	-	Surface Mount	-	Tape & Reel	SOT-23-3 (TO-236)	-	225mW	3	-	-	-	±20 V	60 V	0.3 W	Enhancement	2N7002LT1GOSTR	SOT-23	Gull-wing	SOT-23	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1	60V	50pF @ 25V	115mA (Tc)	2.5V @ 250µA	7.5 Ω	0.115 A	1.3mm	-1.5V	2.9 x 1.3 x 0.94mm	-	+150°C	Compliant	:No SVHC (20-Jun-2013)	85412900	20ns	40ns	:2.5V	:7.5ohm	80Millimhos	:800mA	20(Max) ns	0.94mm	2.9mm	0.000033	N-Channel	:3	SOT-23	:MSL 1 - Unlimited	-	Small Signal	2.9	0.94	3	-	-	-	-	-	-	-	-	-	-	-	:60V	:2.5mm	:8mm	:702	:25°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 1SMB20CAT3 TVS Diodes - Transient Voltage Suppressors 20V 600W Diode TVS Single Bi-Dir 20V 600W 2-Pin SMB T/R TVS DIODE 20VWM 32.4VC SMB ON Semiconductor	10	1: ¥1.22	RoHS Compliant	Reel	DO-214AA	- 65 C	-	-	-	-	-	-	-	-	-	Surface Mount	Obsolete	2,500	SMB	TVS Diodes - Transient Voltage Suppressors	-	2	-	-	2500	-	22.2 V	-	-	1SMB20CAT3OSTR	DO-214-AA	J-Lead	SMB	-	-	1	-	-	-	-	-	-	3.81(Max)	20V	3.81(Max) mm W x 4.57(Max) mm L	Zener	-65 to 150	-	-	-	-	-	-	-	-	18.5	-	-	-	-	-	-	-	-	Bidirectional	-	4.57(Max)	2.41(Max)	2	-	-	-	-	-	-	-	-	20	-	-	-	-	-	-	-	600 W	32.4 V	No	425pF @ 1MHz	General Purpose	-	-	-	-	-	-	-	-	1 Channel	18.5 A	1	1	20 V	5	SMD/SMT	1SMB10CAT3G	Bi-Directional	-	-	-	-
2 MGP15N40CL IGBT Transistors 15A 410V Ignition Trans IGBT Chip N-CH 440V 15A 3-Pin(3+Tab) TO-220AB Rail IGBT 440V 15A 150W TO220AB ON Semiconductor	-		No	Tube	TO-220-3	+ 150 C	2.25V @ 4V, 15A	Single	150 W	-	-	-	-	Through Hole	-	Through Hole	Obsolete	50	TO-220AB	IGBT Transistors	150W	3	-	-	50	22 V	-	150000	N	MGP15N40CLOS	TO-220	Through Hole	TO-220AB	-	-	-	-	-	-	-	-	-	-	440 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150 W	-	-	-	-	-	-	-	440	-	-	-	-	-	-	-	-	-	-	-	-	Logic	-/4µs	15 A	15	50A	300V, 6.5A, 1 kOhm	-	-	-	-	-	-	-	-	-	-	-	10 V	-	-	-
7 BSS123LT1G Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R MOSFET N-CH 100V 170MA SOT-23 BSS123LT1G, N-channel MOSFET Transistor 0.17A 100V, 3-Pin SOT-23 MOSFET 100V 170mA N-Channel MOSFET, N CH, 100V, 170MA, SOT-23-3 MOSFET, N, SOT-23 MOSFET,Power;N-Ch;VDSS100VDC;RDS(ON)5Ohms;ID0.17A;SOT-23(TO-236);PD225mW ON Semiconductor , N沟道 MOSFET, 170 mA, Vds=100 V, 3针 SOT-23封装 on semiconductor	17694	1: ¥1.632	Lead free / RoHS Compliant	Tape and Reel	3SOT-23	-55 to 150 °C	100 V	Single	0.225 W	N-Channel	6000@10V mOhm	170 mA	40 ns	SMD/SMT	+/- 20 V	Surface Mount	-	Tape & Reel	SOT-23-3 (TO-236)	MOSFET	225mW	3	-	-	3000	±20 V	100 V	0.225 W	Enhancement	BSS123LT1GOSTR	SOT-23	Gull-wing	SOT-23	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1	100V	20pF @ 25V	170mA (Ta)	2.8V @ 1mA	6 Ω	0.17 A	1.3mm	1.3V	2.9 x 1.3 x 0.94mm	Power MOSFET	+150°C	Compliant	:No SVHC (16-Dec-2013)	85412900	20ns	40ns	:20V	:5ohm	80Millimhos	:680mA	20 ns	0.94mm	2.9mm	0.000033	N-Channel	:3	SOT-23	:MSL 1 - Unlimited	N	Power MOSFET	2.9	0.94	3	-	-	No	Not Required dB	Not Required dB	Not Required MHz	0.17 A	Not Required %	-	0.08 S	-	:100V	:2.5mm	:8mm	:SA	:25°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:170mA	-	-
8 BSS138LT1G Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R MOSFET N-CH 50V 200MA SOT-23 BSS138LT1G, N-channel MOSFET Transistor 0.2A 50V, 3-Pin SOT-23 MOSFET, N CH, 50V, 200MA, SOT-23-3 MOSFET, N, 50V, 0.2A, SOT-23 MOSFET,Power;N-Ch;VDSS50VDC;RDS(ON)3.5Ohms;ID200mA;SOT-23(TO-236);PD225mW ON Semiconductor , N沟道 MOSFET, 200 mA, Vds=50 V, 3针 SOT-23封装 MOSFET 50V 200mA N-Channel on semiconductor	6127	46: ¥0.7398	Lead free / RoHS Compliant	Tape and Reel	3SOT-23	-55 to 150 °C	50 V	Single	0.225 W	:N Channel	3500@5V mOhm	0.2 A	20 ns	-	-	Surface Mount	-	Tape & Reel	SOT-23-3 (TO-236)	-	225mW	3	-	-	-	±20 V	50 V	0.225 W	Enhancement	BSS138LT1GOSTR	SOT-23	Gull-wing	SOT-23	MOSFET N-Channel, Metal Oxide	Logic Level Gate	1	50V	50pF @ 25V	200mA (Ta)	1.5V @ 1mA	3.5 Ω	0.2 A	1.3mm	-	2.9 x 1.3 x 0.94mm	Power MOSFET	+150°C	Compliant	:No SVHC (16-Dec-2013)	85411000	20ns	20ns	:1.5V	:3.5ohm	100Millimhos	-	20(Max) ns	0.94mm	2.9mm	0.000033	N-Channel	:3	SOT-23	:MSL 1 - Unlimited	N	Power MOSFET	-	-	-	-	-	No	Not Required dB	Not Required dB	Not Required MHz	0.2 A	Not Required %	-	-	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSP1N60B_Q MOSFET N-Ch/600V/1a/12Ohm onsemi	-		No	Tube	TO-220	+ 150 C	600 V	Single	34 W	N-Channel	12 Ohms	1 A	25 ns	Through Hole	+/- 30 V	-	Obsolete	-	-	MOSFET	-	-	35 ns	45 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQU7N20LTU MOSFET onsemi	-		No	Rail	IPAK	+ 150 C	200 V	Single	2.5 W	N-Channel	0.75 Ohms	5.5 A	20 ns	Through Hole	+/- 20 V	-	Obsolete	-	-	-	-	-	65 ns	125 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQI30N06LTU MOSFET onsemi	-		No	Rail	I2PAK	+ 175 C	60 V	Single	3.75 W	N-Channel	0.035 Ohms	32 A	60 ns	SMD/SMT	+/- 20 V	-	Obsolete	-	-	-	-	-	110 ns	210 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FQI5N50TU MOSFET onsemi	-		No	Rail	I2PAK	+ 150 C	500 V	Single	3.13 W	N-Channel	1.8 Ohms	4.5 A	25 ns	SMD/SMT	+/- 30 V	-	Obsolete	-	-	-	-	-	35 ns	55 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDC6302P_Q MOSFET SSOT-6 P-CH -25V onsemi	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK3745LS MOSFET HIGH-VOLTAGE POWER MOSFET MOSFET N-CH 1500V 2A TO-220FI ON Semiconductor	24	1: ¥27.812	RoHS Compliant	Bulk	TO-220FP-3	+ 150 C	1500 V	Single	35 W	N-Channel	10 Ohms	2 A	-	Through Hole	+/- 20 V	Through Hole	-	100	TO-220FI(LS)	-	2W	-	-	-	-	-	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	-	1500V (1.5kV)	380pF @ 30V	2A (Ta)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	37.5nC @ 10V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFU420BTU MOSFET 500V N-Channel B-FET onsemi	-		RoHS Compliant	Tube	IPAK	+ 150 C	500 V	Single	2.5 W	N-Channel	2.6 Ohms	2.3 A	40 ns	Through Hole	+/- 30 V	-	Obsolete	-	-	MOSFET	-	-	35 ns	30 ns	70	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3.5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRFU420BTU_NL	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLR220ATF MOSFET 200V N-Channel a-FET Logic Level Trans MOSFET N-CH 200V 4.6A 3-Pin(2+Tab) DPAK T/R onsemi	-		RoHS Compliant	Reel	TO-252	+ 150 C	200 V	Single	2.5 W	N-Channel	0.8 Ohms	4.6 A	24 ns	SMD/SMT	+/- 20 V	Surface Mount	Obsolete	-	-	MOSFET	-	3	6 ns	6 ns	2000	±20	200	2500	N	-	DPAK	Gull-wing	DPAK	-	-	1	-	-	-	-	800@5V	4.6	6.1	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	6.6	2.3	2	-	3.3 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	IRLR220ATF_NL	-	-	-	-	-	-	-	-	-	-	-	-	Tab	-
FQI6N70TU MOSFET onsemi	-		No	Rail	I2PAK	+ 150 C	700 V	Single	3.13 W	N-Channel	1.5 Ohms	6.2 A	55 ns	SMD/SMT	+/- 30 V	-	Obsolete	-	-	-	-	-	50 ns	70 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 NTR0202PLT3G MOSFET -20V -400mA P-Channel Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-23 T/R MOSFET P-CH 20V 400MA SOT-23 ON Semiconductor	-		RoHS Compliant	Reel	SOT-23	+ 150 C	- 20 V	Single	0.225 W	P-Channel	0.55 Ohms	- 0.4 A	18 ns	SMD/SMT	+/- 20 V	Surface Mount	Obsolete	10,000	SOT-23-3 (TO-236)	MOSFET	225mW	3	6 ns	6 ns	10000	±20	20	225	Enhancement	-	SOT-23	Gull-wing	SOT-23	MOSFET P-Channel, Metal Oxide	Logic Level Gate	1	20V	70pF @ 5V	400mA (Ta)	2.3V @ 250µA	800@10V	0.4	-	-	-	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	2.18nC @ 10V	0.5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
1SMB10AT3 TVS Diodes - Transient Voltage Suppressors 10V 600W TVS DIODE 10VWM 17VC SMB Diode TVS Single Uni-Dir 10V 600W 2-Pin SMB T/R ON Semiconductor	10	1: ¥1.50	Contains lead / RoHS non-compliant	Tape & Reel (TR)	DO-214AA, SMB	-65°C ~ 150°C	-	-	-	-	-	-	-	-	-	Surface Mount	-	2,500	SMB	-	-	-	-	-	-	-	11.1V	-	-	1SMB10AT3OSTR	-	-	-	-	-	-	-	-	-	-	-	-	-	10V	-	Zener	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	600W	17V	No	1460pF @ 1MHz	General Purpose	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1
NGD15N41CLT4 IGBT Transistors 15A 410V Ignition Trans IGBT Chip N-CH 440V 15A 3-Pin(2+Tab) DPAK T/R IGBT 440V 15A 107W DPAK ON Semiconductor	-		Contains lead / RoHS non-compliant	Tape and Reel	TO-252-3, DPak (2 Leads + Tab), SC-63	175	2.1V @ 4.5V, 10A	-	-	-	-	-	-	-	-	Surface Mount	-	2,500	DPAK-3	-	107W	3	-	-	-	15	-	107000	N	NGD15N41CLT4OSTR	DPAK	Gull-wing	DPAK	-	-	-	-	-	-	-	-	-	-	440V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	440	-	-	-	-	-	-	-	-	-	-	-	-	Logic	-/4µs	15A	15	50A	300V, 6.5A, 1 kOhm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 NTD85N02RT4 MOSFET 24V 85A N-Channel MOSFET N-CH 24V 12A DPAK ON Semiconductor	3150	1713: ¥1.4892	No	Reel	DPAK	+ 150 C	24 V	Single	2.4 W	N-Channel	0.0048 Ohms	85 A	25 ns	SMD/SMT	+/- 20 V	Surface Mount	Obsolete	2,500	D-Pak	MOSFET	1.25W	-	12 ns	77 ns	2500	-	-	-	-	NTD85N02RT4OS	-	-	-	MOSFET N-Channel, Metal Oxide	Logic Level Gate	-	24V	2050pF @ 20V	12A (Ta), 85A (Tc)	2V @ 250µA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	17.7nC @ 5V	38 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2N7008_D26Z MOSFET DISC BY MFG 2/02 onsemi	-		No	-	-	-	-	-	-	-	-	-	-	-	-	-	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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onsemi- Discrete IGBTs

Discrete IGBTs - 型号列表

Rds On (Max) @ Id, Vgs

Current - Drain (Idss) @ Vds (Vgs=0)

Vce(on) (Max) @ Vge, Ic

Package / Case

Power - Rated

Delay to 1st Tap

Other Names

Rise Time (Typ)

Factory Pack Quantity

Voltage - Breakdown

Power Dissipation (Max)

Supplier Device Package

Standard Package

Power - Max

Vgs(th) (Max) @ Id

On-State Resistance (Max)

Drain to Source Voltage (Vdss)

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC

Packaging

Operating Temperature

Voltage - Supply

Fall Time

Current - Peak Pulse (10/1000us)

RoHS

Vgs (Max)

Voltage - Threshold

Current - Peak Pulse (8/20us)

Width

Standard Package Name

Package Quantity

Gate Charge (Qg) (Max) @ Vgs

DC Resistance (DCR) - Primary

Product Category

Tariff No

Transistor Type

Delay Time - OFF

Resistance - RDS(On)

Current Transfer Ratio (Max)

Switch Time (Ton, Toff) (Max)

Size / Dimension

Type

Lead Style

Length - Overall

Shell Size - Insert

SVHC

FET Type

FET Feature

Delay Time - ON

Current Drain (Id) - Max

Current Transfer Ratio (Min)

Voltage - Gate Trigger (Vgt) (Max)

Height

Length

Weight

Termination

Mounting Type

Mounting Style

Package Cooled

Number of Positions

Polarity

Channel Type

Card Standard

Operating Temperature - Junction

Contact Voltage (Max)

SMD Marking

Printed Circuit Board

Power - Peak Pulse

Voltage - Clamping

Voltage - Input (Min)

Capacitance @ Frequency

Current - Collector (Ic) (Max)

Part # Aliases