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Toshiba Corporation
DIACs - Trigger Diodes

Toshiba Corporation- DIACs - Trigger Diodes

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality and reliability makes it a trusted partner for global electronics manufacturers.

DIACs - Trigger Diodes - 型号列表

38 parts in total

Mfr Part #	Quantity Available	Price	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Standard Package	Vgs (Max)	RoHS	Packaging	Transistor Type	Current - Continuous Drain (Id) @ 25degC	FET Type	Power - Rated	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Height	Mounting Style	Supplier Device Package	Voltage - Breakdown	Current - Peak Pulse (10/1000us)	Power - Max	Length	Channel Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Other Names	Factory Pack Quantity	Power - Average Forward	Series	Manufacturer	Number of Elements	Package Cooled	Number of Positions	Card Standard	FET Feature	Rds On (Max) @ Id, Vgs	Width	Size / Dimension	Voltage - Gate Trigger (Vgt) (Max)	Input Capacitance	Voltage - Cutoff (VGS off) @ Id	Product Category	Number of Channels	Technology	SVHC	Tariff No	Voltage - Threshold	Current Rating (Max)	Resistance - RDS(On)	Contact Voltage (Max)	Weight	Termination	Number of Pins	Material Finish	Current Transfer Ratio (Min)	Fall Time	Gate Charge	Rise Time (Typ)	Delay to 1st Tap	Switch Time (Ton, Toff) (Max)	Product	Type	Standard Package Name	EU RoHS	Lead Style	Package Quantity	Current - Peak Pulse (8/20us)	Current Drain (Id) - Max	Voltage - Breakdown (V(BR)GSS)
TIM6472-45SL TRANSISTOR,GAAS FET INTERNALLY MATCHED, 6GHZ, 125W Trans JFET 15V 20A 3-Pin 2-16G1B toshiba	-		Single	Screw	-	32-16G1B	-65 to 175 °C	Trays, Rail / Tube	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	20000 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TIM5964-4UL TRANSISTOR,GAAS FET INTERNALLY MATCHED,6GHZ,23W Trans JFET 15V 3.5A 3-Pin 2-11D1B toshiba	-		Single	Screw	-	32-11D1B	-65 to 175 °C	Trays	-5 V	-	-	-	-	-	-	-	-	-	-	-	-	-	15 V	3500 mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCP8103-H(TE8> Trans MOSFET P-CH 40V 4.8A 8-Pin PS T/R toshiba	-		-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SSM3J118TU(TE85L) MOSFET Vds=-30V Id=-1.4A 3Pin MOSF 30V 1.4A UFM MOSFET P-CH 30V 1.4A UFM Toshiba	100	1: ¥3.264	Single	*	137pF @ 15V	3-SMD, Flat Leads	+ 150 C	3,000	20 V	Lead free / RoHS Compliant	Tape & Reel (TR)	P-Channel	1.4A (Ta)	MOSFET P-Channel, Metal Oxide	800 mW	- 30 V	360 mOhms	30V	- 1.4 A	0.7 mm	SMD/SMT	UFM	-	-	800mW	2 mm	Enhancement	-	-	-	SSM3J118TU(TE85L)CT	3000	800 mW	SSM3J118	Toshiba	-	-	-	-	Logic Level Gate, 4V Drive	240 mOhm @ 650mA, 10V	-	-	-	-	-	MOSFET	1 Channel	Si	-	-	-	-	-	-	-	-	-	-	1.5 S / 0.8 S	-	-	-	-	-	MOSFET Small Signal	Small Signal	-	-	-	-	-	-	-
SSM6K18TU(TE85L,F) MOSFET Vds=20V Id=4A 6Pin MOSFET, N CH, 4A, 20V, SSOTFMLP Toshiba	10	1: ¥1.2172	Single	-	-	ES-6	:150°C	-	:4V	RoHS Compliant	Reel	N-Channel	:4A	-	500 mW	20 V	-	:20V	4 A	-	Through Hole	-	-	-	-	-	-	:500mW	-	-	-	3000	-	-	-	-	-	-	-	-	34 mOhms	-	-	-	-	-	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:1.1V	:4A	:40mohm	:20V	0.0005	:SMD	:6	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPC6006-H(TE85L,F) MOSFET MOSFET N-Ch 40V 3.9A MOSFET N-CH 40V 3.9A VS6 2-3T1A TPC6006-H(TE85L,F), N-channel MOSFET Transistor 3.9A 40V, 6-Pin VS MOSFET, N CH, 3.9A, 40V, TSOP6 Toshiba	10	1: ¥1.836	Quad Drain, Single	Surface Mount	251pF @ 10V	SOT-23-6 Thin, TSOT-23-6	+150 °C	3,000	±20 V	Compliant	Tape & Reel (TR)	:N Channel	3.9A (Ta)	MOSFET N-Channel, Metal Oxide	-	-	0.075 Ω	40V	-	0.7mm	-	VS-6 (2.9x2.8)	40 V	3.9 A	-	2.9mm	Enhancement	2.2 W	2.3V @ 1mA	4.4nC @ 10V	-	-	-	-	-	1	VS	6	Power MOSFET	Logic Level Gate	75 mOhm @ 1.9A, 10V	1.6mm	2.9 x 1.6 x 0.7mm	-	-	-	-	-	-	:No SVHC (20-Jun-2013)	85412900	:2.3V	:3.9A	:75mohm	:40V	0.0004	:SMD	:6	:-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8018-H(TE12L,Q) MOSFET PW TR N-Ch 30V 18A 1.9W 3.5mOhms Trans MOSFET N-CH 30V 18A 8-Pin SOP T/R TPC8018-H(TE12L,Q), N-channel MOSFET Transistor, 18A 30V, 8-Pin SOP Toshiba	5267	5: ¥11.1384	Quad Drain, Single, Triple Source	Surface Mount	2265 pF V @ 10	-	+150 °C	-	±20 V	Compliant	Tape and Reel	-	-	-	-	-	0.005 Ω	-	-	1.5mm	-	-	30 V	18 A	-	-	Enhancement	1.9 W	-	21 nC V @ 5, 38 nC V @ 10	-	-	-	-	-	1	SOP	8	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SOIC	Compliant	Gull-wing	SOP	-	-	-
2SK4103(TE16L1,NQ) MOSFET N-CH 500V 5A PW-MOLD 2SK4103(TE16L1,NQ), N-channel MOSFET Transistor 5A 500V, 3-Pin PW Mold Toshiba	8818	10: ¥6.6572	Single	Surface Mount	-	-	+150 °C	-	-	-	-	-	-	-	-	-	1.5 Ω	-	-	2.3mm	-	-	500 V	5 A	-	6.5mm	N	40 W	-	16 nC V @ 10	-	-	-	-	-	1	PW Mold	3	Power MOSFET	-	-	5.5mm	6.5 x 5.5 x 2.3mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 2SK3566(STA4,Q,M) MOSFET N-CH 900V 2.5A TO-220SIS MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm MOSFET, N, 900V, TO-220SIS Toshiba	796	1: ¥6.405	Single	Through Hole	470pF @ 25V	TO-220-3 Full Pack	- 55 C	50	:10V	RoHS Compliant	Tube	N-Channel	2.5A (Ta)	MOSFET N-Channel, Metal Oxide	40 W	900 V	-	900V	2.5 A	-	Through Hole	TO-220SIS	-	-	40W	-	-	:40W	4V @ 1mA	12nC @ 10V	-	-	-	-	-	-	-	-	-	Standard	6.4 Ohm @ 1.5A, 10V	-	-	30 V	-	-	MOSFET	-	-	:No SVHC (20-Jun-2013)	85412900	:4V	:2.5A	:6.4ohm	:900V	0.0017	:Through Hole	:3	:-	2 S	30 ns	12 nC	20 ns	-	-	-	-	-	-	-	-	:7.5A	-	-
2 2SK4003(Q) MOSFET N-CH 600V 3A PW-MOLD 2SK4003(Q), N-channel MOSFET Transistor 3A 600V, 3-Pin PW Mold2 Toshiba	12610	5: ¥4.6512	Single	Through Hole	600 pF V @ 25	-	+150 °C	-	±30 V	-	-	-	-	-	-	-	2.2 Ω	-	-	5.5mm	-	-	600 V	3 A	-	6.5mm	Enhancement	20 W	-	15 nC V @ 10	-	-	-	-	-	1	PW Mold2	3	Power MOSFET	-	-	2.3mm	6.5 x 2.3 x 5.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TK7A60W,S4VX MOSFET N CH 600V 7A TO-220SIS MOSFET N-Ch 7A 30W FET 600V 490pF 15nC TK7A60W,S4VX Toshiba	10	50: ¥6.5096	Single	Through Hole	490pF @ 300V	TO-220-3 Full Pack	- 55 C	50	30 V	RoHS Compliant	Tube	N-Channel	7A (Ta)	MOSFET N-Channel, Metal Oxide	30 W	600 V	500 mOhms	600V	7 A	15 mm	Through Hole	TO-220SIS	-	-	30W	10 mm	Enhancement	-	3.7V @ 350µA	15nC @ 10V	TK7A60WS4VX	50	30 W	TK7A60W	Toshiba	-	-	-	-	Super Junction	600 mOhm @ 3.5A, 10V	-	-	30 V	-	-	-	1 Channel	Si	-	-	-	-	-	-	-	-	-	-	-	7 ns	15 nC	18 ns	55 ns	40 ns	-	-	-	-	-	-	-	-	-
2 SSM5N15FU(TE85L,F) MOSFET N CH 30V, 100MA USV MOSFET N-Ch Sm Sig FET 0.1A 30V 2-in-1 Toshiba Semiconductor and Storage	6000	3000: ¥0.5848	Dual	Surface Mount	7.8pF @ 3V	6-TSSOP (5 Lead), SC-88A, SOT-353	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	100mA	MOSFET N-Channel, Metal Oxide	200 mW	30 V	4 Ohms	30V	100 mA	0.9 mm	SMD/SMT	USV	-	-	200mW	2 mm	-	-	1.5 V	-	SSM5N15FU(TE85LF)CT	3000	200 mW	SSM5N15	Toshiba	-	-	-	-	Logic Level Gate	4 Ohm @ 10mA, 4V	-	-	-	-	-	-	2 Channel	Si	-	-	-	-	-	-	-	-	-	-	-	-	-	-	180 ns	50 ns	-	-	-	-	-	-	-	-	-
3 2SK208-Y(TE85L,F) MOSFET N-CH 50V S-MINI JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	3865	1: ¥0.8261	Single	Surface Mount	8.2pF @ 10V	TO-236-3, SC-59, SOT-23-3	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	MOSFET N-Channel, Metal Oxide	100 mW	- 5 V	-	50V	6.5 mA	-	SMD/SMT	S-Mini	-	-	100mW	-	-	-	- 30 V	-	2SK208-Y(TE85LF)TR	3000	100 mW	2SK208	Toshiba	-	-	-	-	*	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK880GRTE85LF MOSF N CH 50V 100MW USM JFET N-Ch Junction FET 10mA -50V VGDS JFET N-CH 50V 100MW USM Toshiba Semiconductor and Storage	8224	1: ¥4.216	Single	Surface Mount	13pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	14 mA	N-Channel	100 mW	- 1.5 V	-	-	6.5mA @ 10V	-	SMD/SMT	SC-70	-	-	100mW	-	-	-	- 50 V	-	2SK880GRTE85LFCT	3000	100 mW	2SK880	Toshiba	-	-	-	-	-	-	-	-	-	13 pF	1.5V @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	14 mA	50V
2 2SK879-GR(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	240	1: ¥1.554	Single	Surface Mount	8.2pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	-	10 V	2.6mA @ 10V	-	SMD/SMT	USM	-	-	100mW	-	-	-	- 30 V	-	2SK879-GR(TE85LF)TR	3000	100 mW	2SK879	Toshiba	-	-	-	-	-	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK879-Y(TE85L,F) JFET N-CH USM JFET Junction FET N-Ch 0.3 to 6.5mA 10mA Toshiba Semiconductor and Storage	574	1: ¥1.43	Single	Surface Mount	8.2pF @ 10V	SC-70, SOT-323	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	6.5 mA	N-Channel	100 mW	- 5 V	-	10 V	1.2mA @ 10V	-	SMD/SMT	USM	-	-	100mW	-	-	-	400mV @ 100nA	-	2SK879-Y(TE85LF)TR	3000	100 mW	2SK879	Toshiba	-	-	-	-	-	-	-	-	- 30 V	8.2 pF	400mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK3320-BL(TE85L,F JFET DUAL N-CH USV JFET Junction FET N-Ch x2 1.2V to 14mA 10mA Toshiba Semiconductor and Storage	202	1: ¥6.6255	Dual	Surface Mount	13pF @ 10V	6-TSSOP (5 Lead), SC-88A, SOT-353	-	3,000	-	Lead free / RoHS Compliant	Tape & Reel (TR)	N-Channel	14 mA	N-Channel	200 mW	- 1.5 V	-	10 V	6mA @ 10V	-	SMD/SMT	USV	-	-	200mW	-	-	-	- 30 V	-	2SK3320-BL(TE85LFTR	-	200 mW	2SK3320	Toshiba	-	-	-	-	-	-	-	-	- 30 V	13 pF	200mV @ 100nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCA8006-H(TE12L,Q,M) TPCA8006-H(TE12L,Q,M), N-channel MOSFET Transistor 18A 100V, 8-Pin SOP Advanced Toshiba	9018	5: ¥6.5076	Quad Drain, Single, Triple Source	Surface Mount	780 pF V @ 10	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	0.067 Ω	-	-	0.95mm	-	-	100 V	18 A	-	5mm	Enhancement	45 W	-	12 nC V @ 10	-	-	-	-	-	1	SOP Advanced	8	Power MOSFET	-	-	5mm	5 x 5 x 0.95mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPC8114(TE12L,Q) TPC8114(TE12L,Q), P-channel MOSFET Transistor 18A 30V, 8-Pin SOP Toshiba	7348	5: ¥7.99	Quad Drain, Single, Triple Source	Surface Mount	7480 pF V @ 10	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	0.005 Ω	-	-	1.5mm	-	-	30 V	18 A	-	5mm	Enhancement	1.9 W	-	180 nC V @ 10	-	-	-	-	-	1	SOP	8	Power MOSFET	-	-	4.4mm	5 x 4.4 x 1.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 2SK1120(F) 2SK1120(F), N-channel MOSFET Transistor 8A 1000V, 3-Pin TO-3P W, TO-3PN Toshiba	906	25: ¥42.6835	Single	Through Hole	1300 pF V @ 25	-	+150 °C	-	±20 V	-	-	-	-	-	-	-	1.8 Ω	-	-	19mm	-	-	1000 V	8 A	-	15.9mm	Enhancement	150 W	-	120 nC V @ 10	-	-	-	-	-	1	TO-3P W, TO-3PN	3	Power MOSFET	-	-	4.8mm	15.9 x 4.8 x 19mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-