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High-Power Discrete Semiconductor Modules

Toshiba Corporation- High-Power Discrete Semiconductor Modules

Toshiba Corporation is a Japanese multinational conglomerate headquartered in Minato, Tokyo, founded in 1939 through the merger of Shibaura Seisakusho and Tokyo Denki, with roots dating back to 1875. Its core business areas include semiconductors, storage solutions, infrastructure systems, and digital solutions. In semiconductors, Toshiba offers a broad portfolio of discrete devices, optoelectronics, analog ICs, and microcontrollers. Key product series include the TLP photocoupler family for optoelectronics, power MOSFETs such as the SSM and DT series, and IGBT modules like the MG series. The company also provides the TXZ family of ARM-based microcontrollers for embedded applications and motor driver ICs for industrial and automotive markets. Toshiba has been consistently ranked as the world's number one supplier of optoelectronics and discrete components since 1986. Its technological advantages include proprietary semiconductor processes and a strong focus on high-efficiency power devices, including silicon carbide (SiC) technology. The company's electronic devices and storage division drives innovation in IoT, automotive, and data center applications. Toshiba's legacy in quality and reliability makes it a trusted partner for global electronics manufacturers.

High-Power Discrete Semiconductor Modules - 型号列表

88 parts in total

Mfr Part #	Quantity Available	Price	Packaging	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature	FET Feature	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Series	Technology	Gate Charge (Qg) (Max) @ Vgs	Part Status	Qualification	Grade	FET Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mfr	Base Product Number	Configuration	Power - Max	Manufacturer	Standard Package	RoHS	Voltage - Input (Min)	Channel Type	Product Category	Output Type	Current - Output	Number of Outputs	Frequency - Switching	Synchronous Rectifier	Type	Other Names	Factory Pack Quantity	Fall Time	Gate Charge	Power - Rated	Rise Time (Typ)	Transistor Type	Delay to 1st Tap	Number of Channels	Power - Average Forward	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Switch Time (Ton, Toff) (Max)	Voltage - Gate Trigger (Vgt) (Max)	Current - Drain (Idss) @ Vds (Vgs=0)	Height	Length	Mounting Style	Current - Collector Cutoff (Max)
TB7106F(T2LPP1,Q) X35 PB-F POWER MOSFET TRANSISTOR SOP-8-ADV MOQ=3000 PD=45W F X35 PB-F POWER MOSFET TRANSIST IC REG BUCK SYNC ADJ 3A 8SOP-ADV Voltage Regulators - Switching Regulators DC DC Converter IC 4.5 to 20V 0.18Ohm toshiba	10	3000: ¥5.0932	Tape & Reel (TR)	Surface Mount	8-PowerVDFN	8-SOP Advance	-40°C ~ 125°C	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	3,000	RoHS Compliant	0.8 V ~ 18 V	-	Voltage Regulators - Switching Regulators	Adjustable	3A	1	380kHz	Yes	Step-Down (Buck)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TK5A60W,S4VX DTMOSIV_600V_900MOHM MAX(VGS=1 MOSFET N CH 600V 5.4A TO-220SIS MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC TK5A60W,S4VX MOSFET N-Ch 9.7A 100W FET 600V 380pF 20nC Toshiba	117	1: ¥14.28	Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	- 55 C	Super Junction	3.7V @ 270µA	900 mOhm @ 2.7A, 10V	600V	380pF @ 300V	5.4A (Ta)	TK5A60W	Si	10.5nC @ 10V	-	-	-	MOSFET N-Channel, Metal Oxide	30 V	-	-	-	-	Single	30W	Toshiba	50	RoHS Compliant	-	Enhancement	-	-	-	-	-	-	-	TK5A60WS4VX	50	7 ns	10.5 nC	30 W	18 ns	N-Channel	50 ns	1 Channel	30 W	600 V	770 mOhms	40 ns	30 V	5.4 A	15 mm	10 mm	Through Hole	-
FMG2G75US120 FMG2G75US120, IGBT Module, N-channel, Dual, 100A 1200V Toshiba	10	1: ¥389.164	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Dual	-	-	-	-	1200 V	N	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	100 A
SSM6K809R,LXHF . SSM6K809R,LXHF - N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	2292	3000: ¥1.9481	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	36mOhm @ 5A, 10V	60 V	550 pF @ 10 V	6A (Ta)	-	MOSFET (Metal Oxide)	9.3 nC @ 10 V	Active	AEC-Q101	Automotive	N-Channel	±20V	1.5W (Ta)	4V, 10V	Toshiba Semiconductor and Storage	SSM6K809	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K810R,LXHF . SSM6K810R,LXHF - N-Channel 100 V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	4615	3000: ¥1.9481	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	69mOhm @ 2A, 10V	100 V	430 pF @ 15 V	3.5A (Ta)	-	MOSFET (Metal Oxide)	3.2 nC @ 4.5 V	Active	AEC-Q101	Automotive	N-Channel	±20V	1.5W (Ta)	4.5V, 10V	Toshiba Semiconductor and Storage	SSM6K810	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6N813R,LXHF . SSM6N813R,LXHF - Mosfet Array 100V 3.5A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	50	1: ¥3.3488	Tape & Reel (TR)	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	Logic Level Gate, 4.5V Drive	2.5V @ 100µA	112mOhm @ 3.5A, 10V	100V	242pF @ 15V	3.5A (Ta)	-	MOSFET (Metal Oxide)	3.6nC @ 4.5V	Active	AEC-Q101	Automotive	-	-	-	-	-	SSM6N813	2 N-Channel (Dual)	1.5W (Ta)	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK090Z65Z,S1F . TK090Z65Z,S1F - N-Channel 650 V 30A (Ta) 230W (Tc) Through Hole TO-247-4L(T) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tube	Through Hole	TO-247-4	TO-247-4L(T)	150°C	-	4V @ 1.27mA	90mOhm @ 15A, 10V	650 V	2780 pF @ 300 V	30A (Ta)	DTMOSVI	MOSFET (Metal Oxide)	47 nC @ 10 V	Active	-	-	N-Channel	±30V	230W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM5N16FU,LF . SSM5N16FU,LF - Mosfet Array 20V 100mA (Ta) 200mW (Ta) Surface Mount USV from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV	150°C	-	1.1V @ 100µA	3Ohm @ 10mA, 4V	20V	9.3pF @ 3V	100mA (Ta)	-	MOSFET (Metal Oxide)	-	Active	-	-	-	-	-	-	-	SSM5N16	2 N-Channel (Dual)	200mW (Ta)	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K16FS,LF . SSM3K16FS,LF - N-Channel 20 V 100mA (Ta) 100mW (Ta) Surface Mount SSM from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	SC-75, SOT-416	SSM	150°C	-	1.1V @ 100µA	3Ohm @ 10mA, 4V	20 V	9.3 pF @ 3 V	100mA (Ta)	-	MOSFET (Metal Oxide)	-	Active	-	-	N-Channel	±10V	100mW (Ta)	1.5V, 4V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK065Z65Z,S1F . TK065Z65Z,S1F - N-Channel 650 V 38A (Ta) 270W (Tc) Through Hole TO-247-4L(T) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	25	1: ¥79.764	Tube	Through Hole	TO-247-4	TO-247-4L(T)	150°C	-	4V @ 1.69mA	65mOhm @ 19A, 10V	650 V	3650 pF @ 300 V	38A (Ta)	DTMOSVI	MOSFET (Metal Oxide)	62 nC @ 10 V	Active	-	-	N-Channel	±30V	270W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK3A90E,S4X . TK3A90E,S4X - N-Channel 900 V 2.5A (Ta) 35W (Tc) Through Hole TO-220SIS from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	150°C	-	4V @ 250µA	4.6Ohm @ 1.3A, 10V	900 V	650 pF @ 25 V	2.5A (Ta)	-	MOSFET (Metal Oxide)	15 nC @ 10 V	Active	-	-	N-Channel	±30V	35W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K72KFS,LXHF . SSM3K72KFS,LXHF - N-Channel 60 V 300mA (Ta) 150mW (Ta) Surface Mount SSM from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	SC-75, SOT-416	SSM	150°C	-	2.1V @ 250µA	1.5Ohm @ 100mA, 10V	60 V	40 pF @ 10 V	300mA (Ta)	U-MOSVII-H	MOSFET (Metal Oxide)	0.6 nC @ 4.5 V	Active	AEC-Q101	Automotive	N-Channel	±20V	150mW (Ta)	4.5V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K809R,LF . SSM6K809R,LF - N-Channel 60 V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	3098	3000: ¥1.4517	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	6-SMD, Flat Leads	6-TSOP-F	175°C	-	2.5V @ 100µA	36mOhm @ 5A, 10V	60 V	550 pF @ 10 V	6A (Ta)	U-MOSVIII-H	MOSFET (Metal Oxide)	9.3 nC @ 10 V	Active	-	-	N-Channel	±20V	1.5W (Ta)	4V, 10V	Toshiba Semiconductor and Storage	SSM6K809	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPCP8407,LF . TPCP8407,LF - Mosfet Array 40V 5A (Ta), 4A (Ta) 690mW (Ta) Surface Mount PS-8 from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	36	1: ¥11.991	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-SMD, Flat Leads	PS-8	150°C	-	3V @ 1mA	36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V	40V	505pF @ 10V, 810pF @ 10V	5A (Ta), 4A (Ta)	-	MOSFET (Metal Oxide)	11.8nC @ 10V, 18nC @ 10V	Active	AEC-Q101	Automotive	-	-	-	-	-	TPCP8407	N and P-Channel	690mW (Ta)	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK4P60D,RQ . TK4P60D,RQ - N-Channel 600 V 4A (Ta) 100W (Tc) Surface Mount DPAK from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	150°C	-	4.4V @ 1mA	1.7Ohm @ 2A, 10V	600 V	600 pF @ 25 V	4A (Ta)	-	MOSFET (Metal Oxide)	12 nC @ 10 V	Active	-	-	N-Channel	±30V	100W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK12A50W,S5X . TK12A50W,S5X - N-Channel 500 V 11.5A (Ta) 35W (Tc) Through Hole TO-220SIS from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	10	1: ¥25.676	Tube	Through Hole	TO-220-3 Full Pack	TO-220SIS	150°C	-	3.7V @ 600µA	300mOhm @ 5.8A, 10V	500 V	890 pF @ 300 V	11.5A (Ta)	DTMOSIV	MOSFET (Metal Oxide)	25 nC @ 10 V	Active	-	-	N-Channel	±30V	35W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPN1200APL,L1Q . TPN1200APL,L1Q - N-Channel 100 V 40A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	48	1: ¥10.6575	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-TSON Advance (3.1x3.1)	175°C	-	2.5V @ 300µA	11.5mOhm @ 20A, 10V	100 V	1855 pF @ 50 V	40A (Tc)	U-MOSIX-H	MOSFET (Metal Oxide)	24 nC @ 10 V	Active	-	-	N-Channel	±20V	630mW (Ta), 104W (Tc)	4.5V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPH9R00CQH,LQ . TPH9R00CQH,LQ - N-Channel 150 V 64A (Tc) 960mW (Ta), 210W (Tc) Surface Mount 8-SOP Advance (5x5) from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	10	1: ¥35.7105	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-SOP Advance (5x5)	175°C	-	4.3V @ 1mA	9mOhm @ 32A, 10V	150 V	5400 pF @ 75 V	64A (Tc)	-	MOSFET (Metal Oxide)	44 nC @ 10 V	Active	-	-	N-Channel	±20V	960mW (Ta), 210W (Tc)	8V, 10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPW2R508NH,L1Q . TPW2R508NH,L1Q - N-Channel 75 V 150A (Ta) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	-		Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	Surface Mount	8-PowerVDFN	8-DSOP Advance	150°C	-	4V @ 1mA	2.5mOhm @ 50A, 10V	75 V	6000 pF @ 37.5 V	150A (Ta)	U-MOSVIII-H	MOSFET (Metal Oxide)	72 nC @ 10 V	Active	-	-	N-Channel	±20V	800mW (Ta), 142W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK155E65Z,S1X . TK155E65Z,S1X - N-Channel 650 V 18A (Ta) 150W (Tc) Through Hole TO-220 from Toshiba Semiconductor and Storage. from now! Toshiba Corporation	344	1: ¥31.688	Tube	Through Hole	TO-220-3	TO-220	150°C	-	4V @ 730µA	155mOhm @ 9A, 10V	650 V	1635 pF @ 300 V	18A (Ta)	-	MOSFET (Metal Oxide)	29 nC @ 10 V	Active	-	-	N-Channel	±30V	150W (Tc)	10V	Toshiba Semiconductor and Storage	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Toshiba Corporation- High-Power Discrete Semiconductor Modules

High-Power Discrete Semiconductor Modules - 型号列表

Input Capacitance (Ciss) (Max) @ Vds

Rds On (Max) @ Id, Vgs

Gate Charge (Qg) (Max) @ Vgs

Current - Continuous Drain (Id) @ 25degC

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Supplier Device Package

Power Dissipation (Max)

Package / Case

Series

Drive Voltage (Max Rds On, Min Rds On)

Base Product Number

Operating Temperature

Vgs (Max)

Power - Max

Configuration

Packaging

Standard Package

Voltage - Input (Min)

Mounting Type

FET Type

FET Feature

Technology

Channel Type

Manufacturer