Vishay Intertechnology, Inc.- MOSFET Modules

Vishay Intertechnology, Inc. was founded in 1962 by Dr. Felix Zandman, with headquarters in Malvern, Pennsylvania, USA. The company is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. Its core business encompasses the design, manufacture, and supply of a vast array of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. In the discrete semiconductor segment, key product lines include TrenchFET® MOSFETs, Schottky diodes, and infrared (IR) emitter/detector components for sensing and remote control. For passive components, Vishay offers industry-leading series such as IHLP® power inductors for high-current applications, Power Metal Strip® resistors for precise current sensing, and Tantalum/MLCC capacitors under the Tantamount® brand. The company serves diverse end markets including industrial, power supply, automotive, computing, consumer, telecommunications, military, aerospace, and medical electronics. Vishay holds a leading market position globally in power discretes and passives, known for its technological innovation and extensive product portfolio. Its “one-stop shop” service model and successful acquisition strategy have enabled it to deliver complete component solutions. With manufacturing facilities across the Americas, Europe, and Asia, Vishay maintains a broad global footprint and is a major partner to distributors like Digi-Key, underscoring its supply chain strength.

MOSFET Modules - 型号列表

352 parts in total

Mfr Part #	Quantity Available	Price	RoHS	Packaging	Package / Case	Standard Package	FET Type	FET Feature	Power - Max	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25degC	Mounting Type	Supplier Device Package	Series	Product Category	Factory Pack Quantity	Transistor Type	Operating Temperature	Technology	Mounting Style	Current - Drain (Idss) @ Vds (Vgs=0)	Tradename	Manufacturer	Delay to 1st Tap	Vce(on) (Max) @ Vge, Ic	Configuration	Voltage - Gate Trigger (Vgt) (Max)	Power - Rated	Gate Charge	Current Transfer Ratio (Min)	Fall Time	Rise Time (Typ)	Width	Height	Length	MOQ	Unit Pack	Other Names	Tariff No	Vgs (Max)	Number of Elements	Voltage - Breakdown	Voltage - Threshold	Resistance - RDS(On)	Power Dissipation (Max)	On-State Resistance (Max)	Switch Time (Ton, Toff) (Max)	Current - Peak Pulse (10/1000us)	Weight	Number of Pins	Package Cooled	Material Finish	Size / Dimension	Number of Positions	Channel Type	Card Standard	Standard Package Name	EU RoHS	Tab Width	Length - Overall	Package Quantity	Shell Size - Insert	Printed Circuit Board	Part # Aliases	Lead Style	Voltage - Supply	Type	Mechanical Life	Automotive	Leadfree Defin	Logic Type	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Matchcode	Standard Leadtime	Thermal Resistance @ GPM
VSKC71/12P Discrete Semiconductor Modules 1200 Volt 80 Amp Vishay Semiconductors	-		RoHS Compliant	Bulk	ADD-A-PAK	-	-	-	-	-	-	-	-	-	-	-	-	-	Discrete Semiconductor Modules	10	-	-	-	Screw	-	-	-	-	-	-	1200 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	1.5 V	Switching Diode	Obsolete	-	-	-	-	-	-	-	-
4 SIHB24N65E-E3 MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS MOSFET N-CH 650V 24A D2PAK MOSFET N-Channel 650V 24A D2PAK MOSFET, N CH, 650V, 24A, D2PAK Vishay / Siliconix	910	1: ¥40.528	Lead free / RoHS Compliant	Tube	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	145 mOhm @ 12A, 10V	122nC @ 10V	650V	2740pF @ 100V	24A (Tc)	Surface Mount	D²PAK	E	MOSFET	-	N-Channel	+150 °C	-	SMD/SMT	24 A	-	-	70 ns	650 V	Single	+/- 20 V	250 W	81 nC	7.1 S	-	-	9.65mm	4.83mm	10.67mm	1	0	SIHB24N65EE3	85044090	±20 V	1	650 V	:2V	:0.12ohm	250 W	0.145 Ω	24 ns	24 A	0.00143	:3	D2PAK	:MSL 1 - Unlimited	10.67 x 9.65 x 4.83mm	3	Enhancement	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SIHG22N60E-E3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247AC MOSFET N-CH 600V 21A TO247AC MOSFET N-Channel 600V 21A TO247AC MOSFET, N CH, 600V, 21A, TO-247AC Vishay E Series 系列 N沟道 MOSFET 晶体管 , 21 A, Vds=600 V, 3针 TO-247AC封装 Vishay / Siliconix	1066	1: ¥30.464	Lead free / RoHS Compliant	Tube	TO-247-3	500	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	180 mOhm @ 11A, 10V	86nC @ 10V	600V	1920pF @ 100V	21A (Tc)	Through Hole	TO-247AC	E	MOSFET	-	N-Channel	+150 °C	-	Through Hole	21 A	-	-	59 ns	600 V	Single	+/- 20 V	227 W	57 nC	6.4 S	-	-	5.31mm	20.7mm	15.87mm	1	0	SIHG22N60EE3	85044090	±20 V	1	600 V	:2V	:0.15ohm	227 W	0.18 Ω	18 ns	21 A	0.006	:3	TO247AC	:MSL 1 - Unlimited	15.87 x 5.31 x 20.7mm	3	N	Power MOSFET	TO-247	Compliant	Tab	15.87(Max)	TO-247AC	20.7(Max)	3	-	Through Hole	-	-	-	-	-	-	-	-	-	-	-
4 SIHP24N65E-E3 MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220AB MOSFET N-CH 650V 24A TO220AB MOSFET N-Channel 650V 24A TO220AB MOSFET, N CH, 650V, 24A, TO-220AB Vishay / Siliconix	1000	1: ¥42.908	Lead free / RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	145 mOhm @ 12A, 10V	122nC @ 10V	650V	2740pF @ 100V	24A (Tc)	Through Hole	TO-220AB	-	-	-	:N Channel	+150 °C	-	-	-	-	-	70 ns	-	-	-	-	-	-	-	-	4.65mm	15.49mm	10.51mm	-	-	SIHP24N65EE3	85044090	±20 V	1	650 V	:2V	:0.12ohm	250 W	0.145 Ω	24 ns	24 A	0.00195	:3	TO220AB	:MSL 1 - Unlimited	10.51 x 4.65 x 15.49mm	3	Enhancement	Power MOSFET	TO-220	Compliant	Tab	10.41(Max)	TO-220AB	9.01(Max)	3	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB30N60E-E3 MOSFET N-Channel 600V MOSFET N-CH 600V 29A D2PAK Vishay / Siliconix	10	1000: ¥20.7536	Lead free / RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	125 mOhm @ 15A, 10V	130nC @ 10V	600V	2600pF @ 100V	29A (Tc)	Surface Mount	D²PAK (TO-263)	E	-	1000	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 SIHB22N60E-GE3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK MOSFET 650V 180mOhm 21A TO263 MOSFET N-CH 600V 21A D2PAK MOSFET N-Channel 600V 21A D2PAK MOSFET, N CH, 600V, 21A, D2PAK Vishay , N沟道 MOSFET, 21 A, Vds=600 V, 3针 D2PAK封装 Vishay / Siliconix	143	1: ¥28.152	Lead free / RoHS Compliant	Tube	TO263	1,000	MOSFET N-Channel, Metal Oxide	Super Junction	227W	4V @ 250µA	n.s.Ohm	86nC	600V	1920pF @ 100V	21A (Tc)	Surface Mount	D²PAK	-	-	-	:N Channel	+150 °C	ESeries	-	22A	-	-	59 ns	-	-	-	-	-	-	-	-	9.65mm	4.83mm	10.67mm	1000	1000	SIHB22N60EGE3	85044090	±20 V	1	600 V	:2V	:0.15ohm	227 W	0.18 Ω	18 ns	21 A	0.00143	:3	D2PAK	:MSL 1 - Unlimited	10.67 x 9.65 x 4.83mm	3	N	Power MOSFET	D2PAK	Compliant	Tab	10.41(Max)	D2PAK	4.83(Max)	2	-	Gull-wing	-	-	-	NO	RoHS-conform	NO	227W	600V	SIHB22N60E	12 weeks	0.55K/W
2 SIHB22N60E-E3 MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS MOSFET N-CH 600V 21A D2PAK Vishay / Siliconix	1000	1: ¥28.152	RoHS Compliant	Tube	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Super Junction	227W	4V @ 250µA	180 mOhm @ 11A, 10V	86nC @ 10V	600V	1920pF @ 100V	21A (Tc)	Surface Mount	D²PAK	E	-	1000	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHB22N60EE3	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SiHG32N50D-E3 MOSFET N-CH 500V 32A TO-247AC MOSFET 500V 32A 390W 150mOhm @ 10V MOSFET N-CH 500V 30A TO-247AC VISHAY	10	225: ¥28.968	Lead free / RoHS Compliant	Tube	TO-247-3	500	MOSFET N-Channel, Metal Oxide	Standard	390W	5V @ 250µA	150 mOhm @ 16A, 10V	96nC @ 5V	500V	2550pF @ 100V	30A (Tc)	Through Hole	TO-247AC	E	MOSFET	500	-	-	Si	-	-	TrenchFET	Vishay Semiconductors	-	-	-	-	-	-	-	-	-	5.31 mm	20.82 mm	15.87 mm	500	500	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHG32N50D	-	-	-	-	-	-	-	-	-	-	-	-
SIHD7N60E-E3 MOSFET N CH 600V 7A TO-252 MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS MOSFET N-CH 600V 7A TO-252 VISHAY	10	3000: ¥5.95	Lead free / RoHS Compliant	Tape & Reel (TR)	TO-252-3, DPak (2 Leads + Tab), SC-63	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	600 mOhm @ 3.5A, 10V	40nC @ 10V	600V	680pF @ 100V	7A (Tc)	Surface Mount	D-PAK (TO-252AA)	E	MOSFET	3000	N-Channel	- 55 C	Si	SMD/SMT	7 A	TrenchFET	Vishay Semiconductors	-	600 V	Single	-	-	-	-	-	-	-	-	-	3000	3000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHD7N60E	-	-	-	-	-	-	-	-	-	-	-	-
SIHP7N60E-E3 MOSFET N CH 600V 7A TO-220AB MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS MOSFET N-CH 600V 7A TO-220AB VISHAY	10	560: ¥8.296	Lead free / RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	600 mOhm @ 3.5A, 10V	40nC @ 10V	600V	680pF @ 100V	7A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	7 A	TrenchFET	Vishay Semiconductors	-	600 V	Single	-	78 W	-	-	-	-	-	-	-	1000	1000	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	SIHP7N60E	-	-	-	-	-	-	-	-	-	-	-	-
SIHD6N62E-GE3 MOSFET N-CH 620V 6A TO-252 MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS Vishay Siliconix	10	3000: ¥4.0902	RoHS Compliant	Tape & Reel (TR)	TO-252-3, DPak (2 Leads + Tab), SC-63	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	900 mOhm @ 3A, 10V	34nC @ 10V	620V	578pF @ 100V	6A (Tc)	Surface Mount	D-PAK (TO-252AA)	E	MOSFET	3000	N-Channel	- 55 C	Si	SMD/SMT	6 A	TrenchFET	Vishay Semiconductors	22 ns	700 V	Single	20 V	78 W	34 nC	1.8 S	16 ns	10 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHU6N62E-GE3 MOSFET N-CH 620V 6A TO-251 MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS Vishay Siliconix	2987	1: ¥11.288	RoHS Compliant	Tube	TO-251-3 Long Leads, IPak, TO-251AB	3,000	MOSFET N-Channel, Metal Oxide	Standard	78W	4V @ 250µA	900 mOhm @ 3A, 10V	34nC @ 10V	620V	578pF @ 100V	6A (Tc)	Through Hole	IPAK (TO-251)	E	MOSFET	3000	N-Channel	- 55 C	Si	Through Hole	6 A	TrenchFET	Vishay Semiconductors	22 ns	700 V	Single	20 V	78 W	34 nC	1.8 S	16 ns	10 ns	2.39 mm	6.22 mm	6.73 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP12N65E-GE3 MOSFET N-CH 650V 12A TO-220AB MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS Vishay Siliconix	95	1: ¥16.116	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	156W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHF12N65E-GE3 MOSFET N-CH 650V 12A TO-220 MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS Vishay Siliconix	640	5: ¥15.30	RoHS Compliant	Bulk	TO-220-3 Full Pack	1,000	MOSFET N-Channel, Metal Oxide	Standard	33W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Through Hole	TO-220 Full Pack	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB12N65E-GE3 MOSFET N-CH 650V 12A D2PAK MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS Vishay Siliconix	399	1: ¥13.125	RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	156W	4V @ 250µA	380 mOhm @ 6A, 10V	70nC @ 10V	650V	1224pF @ 100V	12A (Tc)	Surface Mount	D²PAK (TO-263)	E	MOSFET	1000	N-Channel	- 55 C	Si	SMD/SMT	12 A	TrenchFET	Vishay Semiconductors	35 ns	700 V	Single	20 V	156 W	70 nC	3.5 S	18 ns	19 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP23N60E-GE3 MOSFET N-CH 600V 23A TO-220AB MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS Vishay Siliconix	915	1: ¥22.10	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Through Hole	TO-220AB	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	227 W	95 nC	6.4 S	34 ns	38 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHF23N60E-GE3 MOSFET N-CH 600V 23A TO-220 MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS Vishay Siliconix	23	1: ¥23.256	RoHS Compliant	Bulk	TO-220-3 Full Pack	1,000	MOSFET N-Channel, Metal Oxide	Standard	35W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Through Hole	TO-220 Full Pack	E	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	35 W	95 nC	6.4 S	34 ns	38 ns	4.7 mm	15.49 mm	10.41 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SIHP21N65EF-GE3 MOSFET N-CH 650V 21A TO-220AB MOSFET 650V 180mOhms@10V 21A N-Ch EF-SRS MOSFET 650V Vds +/-30V Vgs Rds(On) 0.18@10V Vishay Siliconix	1043	1: ¥30.192	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	208W	4V @ 250µA	180 mOhm @ 11A, 10V	106nC @ 10V	650V	2322pF @ 100V	21A (Tc)	Through Hole	TO-220AB	EF	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	21 A	TrenchFET	Vishay Semiconductors	68 ns	700 V	Single	20 V	208 W	106 nC	7 S	68 ns	34 ns	4.7 mm	15.49 mm	10.41 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHB23N60E-GE3 MOSFET N-CH 60V 23A D2PAK MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS MOSFET N-CH 600V 23A D2PAK Vishay Siliconix	80	1: ¥26.86	RoHS Compliant	Tape & Reel (TR)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	1,000	MOSFET N-Channel, Metal Oxide	Standard	227W	4V @ 250µA	158 mOhm @ 12A, 10V	95nC @ 10V	600V	2418pF @ 100V	23A (Tc)	Surface Mount	D²PAK (TO-263)	E	MOSFET	1000	N-Channel	- 55 C	Si	SMD/SMT	23 A	TrenchFET	Vishay Semiconductors	66 ns	650 V	Single	20 V	227 W	95 nC	6.4 S	34 ns	38 ns	9.65 mm	4.83 mm	10.67 mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 SIHP24N65EF-GE3 MOSFET N-CH 650V 24A TO220AB MOSFET 650V 156mOhms@10V 24A N-Ch EF-SRS Vishay Siliconix	10	1000: ¥14.45	RoHS Compliant	Tube	TO-220-3	1,000	MOSFET N-Channel, Metal Oxide	Standard	250W	4V @ 250µA	156 mOhm @ 12A, 10V	122nC @ 10V	650V	2656pF @ 100V	24A (Tc)	Through Hole	TO-220AB	EF	MOSFET	50	N-Channel	- 55 C	Si	Through Hole	24 A	TrenchFET	Vishay Semiconductors	80 ns	700 V	Single	20 V	250 W	122 nC	7.2 S	46 ns	34 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Vishay Intertechnology, Inc.- MOSFET Modules

MOSFET Modules - 型号列表

Rds On (Max) @ Id, Vgs

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Package / Case

Power - Max

Current - Continuous Drain (Id) @ 25degC

Gate Charge

Delay to 1st Tap

Current - Drain (Idss) @ Vds (Vgs=0)

Width

Height

Length

Supplier Device Package

Power - Rated

Current Transfer Ratio (Min)

Factory Pack Quantity

Other Names

Fall Time

MOQ

Unit Pack

Drain to Source Voltage (Vdss)

Rise Time (Typ)

Voltage - Gate Trigger (Vgt) (Max)

Packaging

Mounting Style

Standard Package

Vce(on) (Max) @ Vge, Ic

Weight

Package Cooled

Size / Dimension

Standard Package Name

Package Quantity

Shell Size - Insert

Part # Aliases

Product Category

RoHS

FET Feature

Transistor Type

Vgs(th) (Max) @ Id

Voltage - Breakdown

Resistance - RDS(On)

Power Dissipation (Max)

On-State Resistance (Max)

Switch Time (Ton, Toff) (Max)

Current - Peak Pulse (10/1000us)

Mounting Type

Series

Channel Type

Operating Temperature

Lead Style

Length - Overall

Printed Circuit Board

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