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BSC011N03LS transistor Series
30V N - channel MOSFETs for power applications
The BSC011N03LS from Infineon is a 30V N-channel MOSFET designed for power applications. If you're working on anything that requires switching high currents at moderate voltages, these transistors are a go-to choice. They are particularly useful in power supplies, inverters, and motor drives where efficiency and reliability are key.
One thing worth noting is their low on-state resistance, which helps minimize power losses during operation. Engineers tend to reach for this when they need a balance between performance and cost. The 30V rating makes them suitable for a wide range of applications, from consumer electronics to industrial equipment. Another practical benefit is their thermal performance; they handle heat well, allowing for more compact designs without compromising on cooling requirements.
These MOSFETs are also known for their robustness against ESD (electrostatic discharge), which is crucial in environments where static electricity might be an issue. Overall, if you're looking for a reliable MOSFET for your next power application, the BSC011N03LS is definitely worth considering.
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BSC011N03LS transistor - Part List
6 parts in total| Mfr Part # | Quantity Available | Price | Category | Vgs (Max) | On-State Resistance (Max) | Width | Channel Type | Operating Temperature | Factory Pack Quantity | RoHS | Fall Time | Gate Charge | Rise Time (Typ) | Transistor Type | Delay to 1st Tap | Number of Channels | Number of Elements | Vgs(th) (Max) @ Id | Power - Average Forward | Power Dissipation (Max) | Vce(on) (Max) @ Vge, Ic | Current Transfer Ratio (Min) | Switch Time (Ton, Toff) (Max) | Current - Continuous Drain (Id) @ 25degC | Height | Length | Packaging | Mounting Type | Mounting Style | Package / Case | Package Quantity | Series | Technology | Manufacturer | Configuration | Tradename | Voltage - Breakdown | Rds On (Max) @ Id, Vgs | Current - Peak Pulse (10/1000us) | Other Names | Part # Aliases | Standard Package | FET Type | FET Feature | Power - Max | Power - Rated | Delay Time - ON | Output Function | Delay Time - OFF | Voltage - Supply | Resistance - Input | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Voltage - Gate Trigger (Vgt) (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Input Capacitance (Ciss) (Max) @ Vds | Number of Pins | Size / Dimension | Supplier Device Package | Function | Card Standard | Standard Package Name | EU RoHS | Lead Style | Length - Overall | Number of Positions | Shell Size - Insert | Printed Circuit Board | Fall Time (Typ) | Propagation Delay (Max) |
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BSC011N03LS Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP MOSFET N-CH 30V 100A 8TDSON MOSFET N-CH 30V 100A Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS infineon technologies | 13391 | 1: ¥8.908 | - | 20 V | 900 uOhms | 5.35mm | Enhancement | -55 to 150 °C | 5000 | Lead free / RoHS Compliant | 6.2 ns | 72 nC | 8.8 ns | N-Channel | 37 ns | 1 Channel | 1 | 2.2V @ 250µA | 96 W | 96 W | 30 V | 170 S | 6.7 ns | 37A (Ta), 100A (Tc) | 1.1mm | 6.1mm | Tape & Reel (TR) | Surface Mount | SMD/SMT | 8TDSON EP | TDSON | BSC011N03 | Si | Infineon Technologies | Single Quad Drain Triple Source | OptiMOS | 30 V | 1.1@10V mOhm | 37 A | BSC011N03LSCT | BSC011N03LSATMA1 SP000799082 | Tape & Reel | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 96W | 2.5 W | 6.7 ns | 增强 | 37 ns | 1V | 0.0014 Ω | 72nC @ 10V | 30V | +/- 20 V | 100 A | 4700pF @ 15V | 8 | 6.1 x 5.35 x 1.1mm | PG-TDSON-8 | Y | 功率 MOSFET | - | - | - | - | - | - | - | 6.2 ns | 8.8 ns |
BSC011N03LSIXT MOSFET OptiMOS Power MOSFET MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS Infineon Technologies | 10 | 1: ¥20.876 | - | 20 V | 900 uOhms | 5.15 mm | Enhancement | - 55 C | 5000 | RoHS Compliant | 6.2 ns | 72 nC | 8.8 ns | N-Channel | 37 ns | 1 Channel | - | 1.2 V | 96 W | - | 30 V | 80 S | 6.4 ns | 100 A | 1.27 mm | 5.9 mm | Reel | - | SMD/SMT | PG-TSDSON-8 | - | BSC011N03 | Si | Infineon Technologies | Single Quad Drain Triple Source | OptiMOS | - | 1.1 mOhms | - | - | BSC011N03LSIATMA1 SP000884574 | - | - | - | - | 96 W | - | - | - | - | - | - | - | +/- 20 V | 100 A | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
BSC011N03LSATMA1 Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP MOSFET N-Ch 30V 100A TDSON-8 OptiMOS Infineon Technologies AG | 8340 | 5000: ¥4.371 | - | 20 V | 900 uOhms | 5.15 mm | Enhancement | + 150 C | 5000 | RoHS Compliant | 6.2 ns | 96 nC | 8.8 ns | N-Channel | 37 ns | 1 Channel | 1 | 1.2 V | 96 W | 2500 | 30 V | 85 S | 6.7 ns | 100 A | 1.27 mm | 5.9 mm | Reel | Surface Mount | SMD/SMT | TDSON-8 | TDSON EP | BSC011N03 | Si | Infineon Technologies | 1 N-Channel | OptiMOS | 30 | - | 37 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SON | Compliant | No Lead | 5.15 | 8 | 1 | 8 | - | - |
| 60000 | 5000: ¥3.9173 | - | 20 | 1.1@10V | 5.9 | Enhancement | 150 | - | - | - | - | - | - | - | - | 1 | - | - | 2500 | - | - | - | - | - | - | - | Surface Mount | - | - | TDSON EP | - | - | - | - | - | 30 | - | 37 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | SON | Compliant | No Lead | 5.15 | 8 | 1 | 8 | - | - | |
BSC011N03LSI MOSFET N-CH 30V 37A TDSON-8 Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS Infineon Technologies | 10 | 1: ¥9.20 | - | 20 V | 900 uOhms | 5.35mm | N | +150 °C | 5000 | Lead free / RoHS Compliant | 6.2 ns | 90 nC | 9.2 ns | Si | 35 ns | 1 Channel | 1 | 2V @ 250µA | 96 W | 96 W | 30 V | 160s | 6.4 ns | 37A (Ta), 100A (Tc) | 1.1mm | 6.1mm | Tape & Reel (TR) | Surface Mount | SMD/SMT | 8-PowerTDFN | TDSON | BSC011N03 | Si | Infineon Technologies | 1 N-Channel | - | - | 1.1 mOhm @ 30A, 10V | - | BSC011N03LSICT | - | 5,000 | MOSFET N-Channel, Metal Oxide | Logic Level Gate | 96W | - | 6.4 ns | 增强 | 35 ns | 0.56V | 0.0014 Ω | 68nC @ 10V | 30V | - | - | 4300pF @ 15V | 8 | 6.1 x 5.35 x 1.1mm | PG-TDSON-8 | Y | 功率 MOSFET | - | - | - | - | - | - | - | - | - |
BSC011N03LSTATMA1 INFINEON | 100 | 1: ¥10.9146 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |


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