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BSC011N03LS transistor Series

30V N - channel MOSFETs for power applications

The BSC011N03LS from Infineon is a 30V N-channel MOSFET designed for power applications. If you're working on anything that requires switching high currents at moderate voltages, these transistors are a go-to choice. They are particularly useful in power supplies, inverters, and motor drives where efficiency and reliability are key.

One thing worth noting is their low on-state resistance, which helps minimize power losses during operation. Engineers tend to reach for this when they need a balance between performance and cost. The 30V rating makes them suitable for a wide range of applications, from consumer electronics to industrial equipment. Another practical benefit is their thermal performance; they handle heat well, allowing for more compact designs without compromising on cooling requirements.

These MOSFETs are also known for their robustness against ESD (electrostatic discharge), which is crucial in environments where static electricity might be an issue. Overall, if you're looking for a reliable MOSFET for your next power application, the BSC011N03LS is definitely worth considering.

Series Images (4)

Frequently Asked Questions

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BSC011N03LS transistor - Part List

6 parts in total

Operating Temperature

Current Transfer Ratio (Min)

Package / Case

Gate Charge

Vgs(th) (Max) @ Id

Rds On (Max) @ Id, Vgs

Width

Other Names

Part # Aliases

Standard Package

RoHS

Vgs (Max)

Power - Rated

Delay Time - ON

Rise Time (Typ)

Transistor Type

Delay Time - OFF

Delay to 1st Tap

Voltage - Supply

Voltage - Breakdown

Power Dissipation (Max)

On-State Resistance (Max)

Gate Charge (Qg) (Max) @ Vgs

Switch Time (Ton, Toff) (Max)

Current - Peak Pulse (10/1000us)

Voltage - Gate Trigger (Vgt) (Max)

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25degC

Height

Length

Packaging

Package Quantity

Channel Type

Configuration

Mfr Part #Quantity AvailablePriceCategoryVgs (Max)On-State Resistance (Max)WidthChannel TypeOperating TemperatureFactory Pack QuantityRoHSFall TimeGate ChargeRise Time (Typ)Transistor TypeDelay to 1st TapNumber of ChannelsNumber of ElementsVgs(th) (Max) @ IdPower - Average ForwardPower Dissipation (Max)Vce(on) (Max) @ Vge, IcCurrent Transfer Ratio (Min)Switch Time (Ton, Toff) (Max)Current - Continuous Drain (Id) @ 25degCHeightLengthPackagingMounting TypeMounting StylePackage / CasePackage QuantitySeriesTechnologyManufacturerConfigurationTradenameVoltage - BreakdownRds On (Max) @ Id, VgsCurrent - Peak Pulse (10/1000us)Other NamesPart # AliasesStandard PackageFET TypeFET FeaturePower - MaxPower - RatedDelay Time - ONOutput FunctionDelay Time - OFFVoltage - SupplyResistance - InputGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Voltage - Gate Trigger (Vgt) (Max)Current - Drain (Idss) @ Vds (Vgs=0)Input Capacitance (Ciss) (Max) @ VdsNumber of PinsSize / DimensionSupplier Device PackageFunctionCard StandardStandard Package NameEU RoHSLead StyleLength - OverallNumber of PositionsShell Size - InsertPrinted Circuit BoardFall Time (Typ)Propagation Delay (Max)
BSC011N03LS
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BSC011N03LS

Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP MOSFET N-CH 30V 100A 8TDSON MOSFET N-CH 30V 100A Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

infineon technologies

133911: ¥8.908-20 V900 uOhms5.35mmEnhancement-55 to 150 °C5000Lead free / RoHS Compliant6.2 ns72 nC8.8 nsN-Channel37 ns1 Channel12.2V @ 250µA96 W96 W30 V170 S6.7 ns37A (Ta), 100A (Tc)1.1mm6.1mmTape & Reel (TR)Surface MountSMD/SMT8TDSON EPTDSONBSC011N03SiInfineon TechnologiesSingle Quad Drain Triple SourceOptiMOS30 V1.1@10V mOhm37 ABSC011N03LSCTBSC011N03LSATMA1 SP000799082Tape & ReelMOSFET N-Channel, Metal OxideLogic Level Gate96W2.5 W6.7 ns增强37 ns1V0.0014 Ω72nC @ 10V30V+/- 20 V100 A4700pF @ 15V86.1 x 5.35 x 1.1mmPG-TDSON-8Y功率 MOSFET-------6.2 ns8.8 ns
BSC011N03LSIXT
BSC011N03LSIXT

MOSFET OptiMOS Power MOSFET MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS

Infineon Technologies

101: ¥20.876-20 V900 uOhms5.15 mmEnhancement- 55 C5000RoHS Compliant6.2 ns72 nC8.8 nsN-Channel37 ns1 Channel-1.2 V96 W-30 V80 S6.4 ns100 A1.27 mm5.9 mmReel-SMD/SMTPG-TSDSON-8-BSC011N03SiInfineon TechnologiesSingle Quad Drain Triple SourceOptiMOS-1.1 mOhms--BSC011N03LSIATMA1 SP000884574----96 W-------+/- 20 V100 A---------------
BSC011N03LSATMA1
BSC011N03LSATMA1

Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

Infineon Technologies AG

83405000: ¥4.371-20 V900 uOhms5.15 mmEnhancement+ 150 C5000RoHS Compliant6.2 ns96 nC8.8 nsN-Channel37 ns1 Channel11.2 V96 W250030 V85 S6.7 ns100 A1.27 mm5.9 mmReelSurface MountSMD/SMTTDSON-8TDSON EPBSC011N03SiInfineon Technologies1 N-ChannelOptiMOS30-37----------------------SONCompliantNo Lead5.15818--
BSC011N03LSIATMA1
BSC011N03LSIATMA1

Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP

Infineon Technologies AG

600005000: ¥3.9173-201.1@10V5.9Enhancement150--------1--2500-------Surface Mount--TDSON EP-----30-37----------------------SONCompliantNo Lead5.15818--
BSC011N03LSI
3
BSC011N03LSI

MOSFET N-CH 30V 37A TDSON-8 Infineon , N沟道 MOSFET, 100 A, Vds=30 V, 8针 TDSON封装 MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS

Infineon Technologies

101: ¥9.20-20 V900 uOhms5.35mmN+150 °C5000Lead free / RoHS Compliant6.2 ns90 nC9.2 nsSi35 ns1 Channel12V @ 250µA96 W96 W30 V160s6.4 ns37A (Ta), 100A (Tc)1.1mm6.1mmTape & Reel (TR)Surface MountSMD/SMT8-PowerTDFNTDSONBSC011N03SiInfineon Technologies1 N-Channel--1.1 mOhm @ 30A, 10V-BSC011N03LSICT-5,000MOSFET N-Channel, Metal OxideLogic Level Gate96W-6.4 ns增强35 ns0.56V0.0014 Ω68nC @ 10V30V--4300pF @ 15V86.1 x 5.35 x 1.1mmPG-TDSON-8Y功率 MOSFET---------
1001: ¥10.9146--------------------------------------------------------------------
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