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GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor, Inc.- Discrete IGBTs

GeneSiC Semiconductor, Inc., founded in 2004 and headquartered in Dulles, Virginia, is a leading developer and manufacturer of silicon carbide (SiC) power semiconductors. The company specializes in high-performance SiC discrete devices and modules for demanding applications such as electric vehicles, industrial motor drives, aerospace, and renewable energy systems. Its product portfolio includes 650V, 1200V, and 1700V SiC MOSFETs, Schottky diodes, bare dies, and custom power modules, all optimized for high-efficiency, high-temperature, and high-frequency operation. GeneSiC’s devices are known for their ruggedness, low switching losses, and excellent cost-performance ratios, making them a preferred choice in high-reliability sectors. In early 2023, the company was acquired by Navitas Semiconductor, forming a combined GaN and SiC powerhouse that accelerates the adoption of next-generation wide-bandgap technologies. GeneSiC holds a strong intellectual property portfolio with over 100 patents in SiC material and device design. It operates advanced fabrication and testing facilities in the United States, ensuring stringent quality control. The company has established a significant presence in the global SiC market, serving tier-one automotive and industrial customers. Prior to the acquisition, GeneSiC was recognized as one of the few independent SiC suppliers with a fully integrated manufacturing capability from epitaxy to packaged products.

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Discrete IGBTs - 型号列表

15 parts in total

Current - Continuous Drain (Id) @ 25degC

Package / Case

Power Dissipation (Max)

Operating Temperature

Power - Max

Rds On (Max) @ Id, Vgs

Packaging

Series

Gate Charge

Power - Average Forward

Vce(on) (Max) @ Vge, Ic

On-State Resistance (Max)

Factory Pack Quantity

Current

Mounting Style

Drain to Source Voltage (Vdss)

Current - Drain (Idss) @ Vds (Vgs=0)

Fall Time

Rise Time (Typ)

Delay to 1st Tap

Standard Package

RoHS

Vgs (Max)

Transistor Type

Tariff No

Number of Pins

Power - Rated

Mounting Type

Supplier Device Package

Mfr Part #Quantity AvailablePricePackagingOperating TemperatureCurrent - Continuous Drain (Id) @ 25degCPackage / CaseStandard PackageRoHSTransistor TypeDrain to Source Voltage (Vdss)Mounting StyleTariff NoPower Dissipation (Max)WeightNumber of PinsFactory Pack QuantityManufacturerConfigurationMounting TypeSupplier Device PackageVce(on) (Max) @ Vge, IcSeriesTechnologyFET TypeFET FeaturePower - MaxRds On (Max) @ Id, VgsVgs (Max)Gate ChargeNumber of ChannelsPower - Average ForwardOn-State Resistance (Max)Current - Drain (Idss) @ Vds (Vgs=0)Fall TimeRise Time (Typ)Delay to 1st TapCurrentVoltageChannel TypePower - RatedMaterial FinishCurrent Drain (Id) - MaxOther NamesIGBT TypeInput TypeSwitching EnergyVoltage - SupplyTd (on/off) @ 25degCVce Saturation (Max)Reverse Recovery Time (trr)Gate Charge (Qg) (Max) @ VgsCurrent - Collector Pulsed (Icm)Test ConditionSwitch Time (Ton, Toff) (Max)WidthHeightLengthType
GA10SICP12-247
GA10SICP12-247

SIC CO-PACK SJT/RECT 10A 1.2KV MOSFET 1200V 25A SIC CoPak

GeneSiC Semiconductor

101: ¥265.88Tube- 55 C25 ATO-247-330RoHS CompliantN-Channel-Through Hole----30GeneSiC SemiconductorSingle--1200 VGA10SICP12SiC----30 V55 nC1 Channel170 W100 mOhms----10A1200VEnhancement-------------------
GA20SICP12-247
GA20SICP12-247

SIC CO-PACK SJT/RECT 20A 1.2KV MOSFET 1200V 45A Std SIC CoPak

GeneSiC Semiconductor

-Tube----RoHS Compliant--------GeneSiC Semiconductor-----SiC-----------------------------------
GA100SICP12-227
2
GA100SICP12-227

SIC CO-PACK SJT/RECT 100A 1.2KV SIC CO-PACK, 1.2kV, TO-227 MOSFET 1200V 200A Standard

GeneSiC Semiconductor

101: ¥1,306.2256:Each:175°:100ASOT-227-4, miniBLOC10--:1.2kV-85412900:133W0:4---------------------100A1200V--------------------
GA06JT12-247
2
GA06JT12-247

TRANS SJT 1200V 6A TO-247AB MOSFET SiC Super Junc Trans 1200V-Rds 230mO-6A

GeneSiC Semiconductor

2511: ¥109.48Tube- 55 C6A (Tc) (90°C)TO-247-330RoHS CompliantN-Channel1200V (1.2kV)Through Hole----30GeneSiC SemiconductorSingleThrough HoleTO-247AB1200 VGA06JT12SiCSilicon Carbide, Normally OffSuper Junction146W220 mOhm @ 6A--1 Channel9 W220 mOhms6 A------9 W------------------
GA04JT17-247
4
GA04JT17-247

TRANS SJT 1700V 4A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A SIC SUPER JUNCTION TRANSITOR, TO-247AB

GeneSiC Semiconductor

1541: ¥217.056Tube- 55 C4A (Tc) (95°C)TO-247-330RoHS Compliant:JFET1700V (1.7kV)Through Hole85412900:91W0:3--SingleThrough HoleTO-247AB---Silicon Carbide, Normally OffSuper Junction91W500 mOhm @ 4A, 10V-----4 A50 ns28 ns73 ns---91 W-:10µA----------------
GA08JT17-247
4
GA08JT17-247

TRANS SJT 1700V 8A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 250mO- 8A SIC SUPER JUNCTION TRANSITOR, TO-247AB

GeneSiC Semiconductor

1101: ¥365.296Tube- 55 C8A (Tc) (90°C)TO-247-330RoHS Compliant:JFET1700V (1.7kV)Through Hole85412900:16W0:3--SingleThrough HoleTO-247AB---Silicon Carbide, Normally OffSuper Junction16W250 mOhm @ 8A-----4 A50 ns28 ns73 ns---91 W:------------------
GA05JT12-247
2
GA05JT12-247

TRANS SJT 5A 1.2KV SIC JUNCTION TRANS, 1.2KV, 5A, TO-247AB MOSFET 1200V 15A Standard

GeneSiC Semiconductor

101: ¥76.50*:175°5A (Tc)*30-:JFET1200V (1.2kV)-85412900:57W0:3---**-*-Silicon Carbide, Normally OffSuper Junction57W280 mOhm @ 5A, 100mA-------------------------------
GA10JT12-247
2
GA10JT12-247

TRANS SJT 1.2KV 10A SIC JUNCTION TRANS, 1.2KV, 10A, TO-247AB MOSFET 1200V 25A Standard

GeneSiC Semiconductor

101: ¥134.368:Each:175°:10A-30-:JFET:1.2kV-85412900:91W0:3------*------------------------------------
GA20JT12-247
2
GA20JT12-247

TRANS SJT 1.2KV 20A SIC JUNCTION TRANS, 1.2KV, 20A, TO-247AB MOSFET 1200V 45A Standard

GeneSiC Semiconductor

101: ¥244.256*:175°20A*30-:JFET1200V (1.2kV)-85412900:151W0:3---**---Silicon Carbide, Normally OffSuper Junction5W70 mOhm @ 20A, 400mA-------------------------------
GA16JT17-247
3
GA16JT17-247

TRANS SJT 1700V 16A TO-247AB MOSFET SiC Supr Jnctn Trans 1700V-Rds 110mO- 16A SIC SUPER JUNCTION TRANSITOR, TO-247AB

GeneSiC Semiconductor

101: ¥687.616Tube:-55°C16A (Tc) (90°C)TO-247-330RoHS Compliant:JFET1700V (1.7kV)-85413000:31W0:330--Through HoleTO-247AB-GA16JT17-Silicon Carbide, Normally OffSuper Junction32W110 mOhm @ 16A-----:100nA-------:------------------
GA35XCP12-247
GA35XCP12-247

IGBT 1200V 100A SOT-247 IGBT 1200V SOT247 IGBT Transistors 1200V 35A SIC IGBT CoPak

GeneSiC Semiconductor

321: ¥257.856Tube- 40 C-TO-247-330RoHS Compliant--Through Hole----30GeneSiC Semiconductor-Through HoleTO-247AB3V @ 15V, 35AGA35XCP12-----20 V50nC-------------1242-1141PTStandard2.66mJ (on), 4.35mJ (off)1200V40ns/232ns3 V36ns0.3 mA35A800V, 35A, 2.2 Ohm, 15V-----
GA20SICP12-263
2
GA20SICP12-263

SIC CO-PACK SJT/RECT 20A 1.2KV SIC CO-PACK, 1.2kV, TO-263 MOSFET 1200V 45A SIC CoPak

GeneSiC Semiconductor

931: ¥359.788:Each:175°:20ATO-263-4, D²Pak (3 Leads + Tab), TO-263AA30Lead free / RoHS Compliant-:1.2kV-85412900:157W0:3---------------------20A1200V--------------------
GA05JT03-46
GA05JT03-46

TRANS SJT 300V 9A MOSFET SiC High Temperature JT

GeneSiC Semiconductor

441: ¥498.032Bulk+ 225 C9 ATO-46-3-RoHS CompliantN-Channel-Through Hole----50GeneSiC SemiconductorSingle--300 V-SiC----30 V14.6 nC1 Channel20 W620 mOhms-12.4 ns6.6 ns12 ns--Enhancement-------------------
GA100JT17-227
GA100JT17-227

TRANS SJT 1700V 160A SOT227 MOSFET 1700V 160A SiC Junction Transistor

GeneSiC Semiconductor

1030: ¥1,708.50Tube+ 175 C160 ASOT-227-4-RoHS CompliantN-Channel-Chassis Mount----10GeneSiC SemiconductorSingle--1700 V-SiC----30 V478 nC1 Channel535 W21 mOhms-120 ns100 ns160 ns-----------------50 ns----
GA10SICP12-263
GA10SICP12-263

TRANS SJT 1200V 25A TO263-7 MOSFET 1200V 25A Std SIC CoPak

GeneSiC Semiconductor

981: ¥265.812Reel+ 175 C25 ATO-263-7-RoHS CompliantN-Channel-SMD/SMT----50GeneSiC SemiconductorSingle--1200 V-SiC----30 V55 nC1 Channel170 W100 mOhms------Enhancement---------------9.169 mm4.597 mm10.668 mmTransistor/Schottky Diode Co-Pack
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