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Magnatec GmbH
Discrete Semiconductors

Magnatec GmbH- Discrete Semiconductors

Magnatec GmbH is a German-based semiconductor manufacturer specializing in power discrete components. Founded in the early 1990s, the company is headquartered in Hückelhoven, Germany, with additional facilities and a global sales network. Magnatec focuses on the design, development, and production of high-performance power semiconductors including MOSFETs, IGBTs, thyristors, power diodes, and rectifier modules. Its product portfolio encompasses standard and fast recovery diodes, Schottky diodes, Zener diodes, and custom power modules for demanding applications. The company's devices are widely used in industrial motor drives, power supplies, renewable energy systems, automotive electronics, and traction applications. Magnatec is known for robust and reliable components capable of operating at high voltages and currents. The company maintains in-house wafer fabrication and assembly lines, ensuring strict quality control and rapid customer response. With decades of experience, Magnatec has established a strong position in the European market and serves customers worldwide through a network of distributors. It is recognized as a niche specialist in power discretes, competing with larger entities by offering flexible, customer-specific solutions. Through continuous innovation and adherence to international standards, Magnatec remains a trusted partner in the power electronics industry.

Discrete Semiconductors - 型号列表

29 parts in total

Mfr Part #	Quantity Available	Price	Vgs (Max)	Delay to 1st Tap	Number of Elements	Voltage - Breakdown	Power Dissipation (Max)	Switch Time (Ton, Toff) (Max)	Current - Peak Pulse (10/1000us)	Width	Height	Length	Mounting Type	Package Cooled	Size / Dimension	Number of Positions	Channel Type	Card Standard	Configuration	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Delay Time - ON	Transistor Type	Delay Time - OFF	Voltage - Supply	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25degC	Number of Pins	Package Quantity	Input Capacitance (Ciss) (Max) @ Vds	Output Function	On-State Resistance (Max)	Resistance - Input	Function
2 IRF250 IRF250, N-channel MOSFET Transistor 30A 200V, 2-Pin TO-3 Magnatec , N沟道 MOSFET, 30 A, Vds=200 V, 3针 TO-3封装 Magnatec	10	1: ¥269.55	±20 V	170 ns	1	200 V	150 W	35 ns	30 A	26.67mm	7.87mm	39.95mm	Through Hole	TO-3	39.95 x 26.67 x 7.87mm	2	N	Power MOSFET	Single	+150 °C	55 → 115 nC V @ 10	35 ns	Si	170 ns	200 V	4V	30 A	3	TO-3	3500 pF V @ 25	-	0.09 Ω	90 mΩ	Y
2 BUZ905P BUZ905P, P-channel MOSFET Transistor -8A -160V, 3-Pin TO-247 Magnatec , P沟道 MOSFET, 8 A, Vds=160 V, 3针 TO-247封装 Magnatec	10	1: ¥87.81	±14 V	60 ns	1	-160 V	125 W	120 ns	-8 A	2.49mm	21.46mm	16.26mm	Through Hole	TO-247	16.26 x 2.49 x 21.46mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	120 ns	Si	60 ns	160 V	1.5V	8 A	3	TO-247	734 pF V @ 10	增强	1.5 Ω	1.5 Ω	Y
2 2N6845 2N6845, P-channel MOSFET Transistor 4A 100V, 3-Pin TO-39 Magnatec Si P沟道 MOSFET , 4 A, Vds=100 V, 3针 TO-39封装 Magnatec	10	1: ¥214.45	±20 V	50 ns	1	100 V	20 W	60 ns	4 A	9.4mm	4.57mm	9.4mm	Through Hole	TO-39	9.4 x 9.4 x 4.57mm	3	Enhancement	Power MOSFET	Single	+150 °C	16.3 nC V @ 10	60 ns	Si	50 ns	100 V	4V	4 A	3	TO-39	380 pF V @ 25	增强	0.69 Ω	690 mΩ	Y
2 BUZ900 BUZ900, N-channel MOSFET Transistor 8A 160V, 2-Pin TO-3 Magnatec , N沟道 MOSFET, 8 A, Vds=160 V, 3针 TO-3封装 Magnatec	12	1: ¥102.60	±14 V	50 ns	1	160 V	125 W	100 ns	8 A	8.7mm	25mm	39mm	Through Hole	TO-3	39 x 8.7 x 25mm	2	Enhancement	Power MOSFET	Single	+150 °C	±14 V	100 ns	Si	50 ns	160 V	1.5V	8 A	3	TO-3	500 pF V @ 10	增强	-	-	-
BUZ900CDP BUZ900CDP, N-channel MOSFET Transistor 16A 160V, 2-Pin TO-3 Magnatec	391	1: ¥150.0692	±14 V	50 ns	1	160 V	125 W	100 ns	16 A	25mm	8.7mm	39mm	Through Hole	TO-3	39 x 25 x 8.7mm	2	Enhancement	Power MOSFET	Single	+150 °C	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 BUZ905DP BUZ905DP, P-channel MOSFET Transistor -16A -160V, 3-Pin TO-3PBL Magnatec P沟道 Si MOSFET , 16 A, Vds=160 V, 3针 TO-3PBL封装 Magnatec	10	1: ¥109.66	±14 V	110 ns	1	-160 V	250 W	150 ns	-16 A	5mm	26mm	20mm	Through Hole	TO-3PBL	20 x 5 x 26mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	150 ns	Si	110 ns	160 V	1.5V	16 A	3	TO-3PBL	-	增强	-	-	-
2 BUZ906 BUZ906, P-channel MOSFET Transistor 8A -200V, 2-Pin TO-3 Magnatec , P沟道 MOSFET, 8 A, Vds=200 V, 3针 TO-3封装 Magnatec	10	1: ¥69.96	±14 V	60 ns	1	-200 V	125 W	120 ns	8 A	25mm	8.7mm	39mm	Through Hole	TO-3	39 x 25 x 8.7mm	2	Enhancement	Power MOSFET	Single	+150 °C	±14 V	120 ns	Si	60 ns	200 V	1.5V	8 A	3	TO-3	-	增强	-	-	-
2 BUZ905D BUZ905D, P-channel MOSFET Transistor -16A -160V, 2-Pin TO-3 Magnatec , P沟道 MOSFET, 16 A, Vds=160 V, 3针 TO-3封装 Magnatec	10	1: ¥84.98	±14 V	110 ns	1	-160 V	250 W	150 ns	-16 A	25mm	8.7mm	39mm	Through Hole	TO-3	39 x 25 x 8.7mm	2	Enhancement	Power MOSFET	Single	+150 °C	±14 V	150 ns	Si	110 ns	160 V	1.5V	16 A	3	TO-3	-	增强	-	-	-
2 IRF740 IRF740, N-channel MOSFET Transistor 10A 400V, 3-Pin TO-220 Magnatec Si N沟道 MOSFET , 10 A, Vds=400 V, 3针 TO-220封装 Magnatec	214	1: ¥17.23	±20 V	50 ns	1	400 V	125 W	14 ns	10 A	4.7mm	8.76mm	10.54mm	Through Hole	TO-220	10.54 x 4.7 x 8.76mm	3	Enhancement	Power MOSFET	Single	+150 °C	63 nC V @ 10	14 ns	Si	50 ns	400 V	4V	10 A	3	TO-220	1400 pF V @ 25	增强	0.55 Ω	550 mΩ	Y
2 BUZ905 BUZ905, P-channel MOSFET Transistor 8A -160V, 2-Pin TO-3 Magnatec , P沟道 MOSFET, 8 A, Vds=160 V, 3针 TO-3封装 Magnatec	135	1: ¥55.05	±14 V	60 ns	1	-160 V	125 W	120 ns	8 A	25mm	8.7mm	39mm	Through Hole	TO-3	39 x 25 x 8.7mm	2	Enhancement	Power MOSFET	Single	+150 °C	±14 V	120 ns	Si	60 ns	160 V	1.5V	8 A	3	TO-3	-	增强	-	-	-
2 IRF9140 IRF9140, P-channel MOSFET Transistor -18A -100V, 2-Pin TO-3 Magnatec , P沟道 MOSFET, 18 A, Vds=100 V, 3针 TO-3封装 Magnatec	15	1: ¥236.11	±20 V	85 ns	1	-100 V	125 W	35 ns	-18 A	26.67mm	7.87mm	39.95mm	Through Hole	TO-3	39.95 x 26.67 x 7.87mm	2	P	Power MOSFET	Single	+150 °C	31 → 60 nC V @ -10	35 ns	Si	85 ns	100 V	4V	18 A	3	TO-3	1400 pF V @ -25	-	0.2 Ω	200 mΩ	Y
BUZ900D BUZ900D, N-channel MOSFET Transistor 16A 160V, 2-Pin TO-3 Magnatec	420	1: ¥139.6176	±14 V	80 ns	1	160 V	250 W	160 ns	16 A	8.7mm	25mm	39mm	Through Hole	TO-3	39 x 8.7 x 25mm	2	Enhancement	Power MOSFET	Single	+150 °C	-	-	-	-	-	-	-	-	-	950 pF V @ 10	-	-	-	-
2 BUZ900P BUZ900P, N-channel MOSFET Transistor 8A 160V, 3-Pin TO-247 Magnatec , N沟道 MOSFET, 8 A, Vds=160 V, 3针 TO-247封装 Magnatec	26	1: ¥75.76	±14 V	50 ns	1	160 V	125 W	100 ns	8 A	2.49mm	21.46mm	16.26mm	Through Hole	TO-247	16.26 x 2.49 x 21.46mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	100 ns	Si	50 ns	160 V	1.5V	8 A	3	TO-247	500 pF V @ 10	增强	-	-	-
2 IRF140 IRF140, N-channel MOSFET Transistor 28A 100V, 2-Pin TO-3 Magnatec , N沟道 MOSFET, 28 A, Vds=100 V, 3针 TO-3封装 Magnatec	72	1: ¥345.75	±20 V	21 ns	1	100 V	125 W	21 ns	28 A	26.67mm	7.87mm	39.95mm	Through Hole	TO-3	39.95 x 26.67 x 7.87mm	2	N	Power MOSFET	Single	+150 °C	30 → 59 nC V @ 10	21 ns	Si	21 ns	100 V	4V	28 A	3	TO-3	1660 pF V @ 25	-	0.089 Ω	89 mΩ	Y
2 BUZ906DP BUZ906DP, P-channel MOSFET Transistor -16A -200V, 3-Pin TO-3PBL Magnatec , P沟道 MOSFET, 16 A, Vds=200 V, 3针 TO-3PBL封装 Magnatec	19	1: ¥121.81	±14 V	110 ns	1	-200 V	250 W	150 ns	-16 A	5mm	26mm	20mm	Through Hole	TO-3PBL	20 x 5 x 26mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	150 ns	Si	110 ns	200 V	1.5V	16 A	3	TO-3PBL	-	增强	-	-	-
2 2N7000 2N7000, N-channel MOSFET Transistor 0.35A 60V, 3-Pin TO-92 Magnatec , N沟道 MOSFET 晶体管, 350 mA, Vds=60 V, 3针 TO-92封装 Magnatec	575	5: ¥5.076	±18 V	7 ns	1	60 V	1 W	5 ns	0.35 A	3.94mm	4.95mm	4.95mm	Through Hole	TO-92	4.95 x 3.94 x 4.95mm	3	Enhancement	Power MOSFET	Single	+150 °C	1.4 nC V @ 5	5 ns	Si	7 ns	60 V	3V	350 mA	3	TO-92	43 pF V @ 25	增强	5 Ω	5 Ω	Y
2 2N6796 2N6796, N-channel MOSFET Transistor 8A 100V, 3-Pin TO-39 Magnatec , N沟道 MOSFET, 8 A, Vds=100 V, 3针 TO-39封装 Magnatec	35	1: ¥175.37	±20 V	40 ns	1	100 V	25 W	30 ns	8 A	9.4mm	4.57mm	9.4mm	Through Hole	TO-39	9.4 x 9.4 x 4.57mm	3	Enhancement	Power MOSFET	Single	+150 °C	±20 V	30 ns	Si	40 ns	100 V	4V	8 A	3	TO-39	900 pF V @ 25	增强	0.18 Ω	180 mΩ	Y
2 BUZ906P BUZ906P, P-channel MOSFET Transistor -8A -200V, 3-Pin TO-247 Magnatec P沟道 Si MOSFET 晶体管 , 8 A, Vds=200 V, 3针 TO-247封装 Magnatec	14	1: ¥66.78	±14 V	60 ns	1	-200 V	125 W	120 ns	-8 A	2.49mm	21.46mm	16.26mm	Through Hole	TO-247	16.26 x 2.49 x 21.46mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	120 ns	Si	60 ns	200 V	1.5V	8 A	3	TO-247	734 pF V @ 10	增强	1.5 Ω	1.5 Ω	Y
2 BUZ901P BUZ901P, N-channel MOSFET Transistor 8A 200V, 3-Pin TO-247 Magnatec , N沟道 MOSFET, 8 A, Vds=200 V, 3针 TO-247封装 Magnatec	10	1: ¥108.24	±14 V	50 ns	1	200 V	125 W	100 ns	8 A	2.49mm	21.46mm	16.26mm	Through Hole	TO-247	16.26 x 2.49 x 21.46mm	3	Enhancement	Power MOSFET	Single	+150 °C	±14 V	100 ns	Si	50 ns	200 V	1.5V	8 A	3	TO-247	500 pF V @ 10	增强	-	-	-
IRF150 IRF150, N-channel MOSFET Transistor 38A 100V, 2-Pin TO-3 Magnatec	10	1: ¥318.24	±20 V	170 ns	1	100 V	150 W	35 ns	38 A	26.67mm	7.87mm	39.95mm	Through Hole	TO-3	39.95 x 26.67 x 7.87mm	2	N	Power MOSFET	Single	+150 °C	50 → 125 nC V @ 10	-	-	-	-	-	-	-	-	3700 pF V @ 25	-	0.065 Ω	-	-