Microchip Technology Inc.- IGBT Modules

Microchip Technology Inc. is a global semiconductor company founded in 1989 and headquartered in Chandler, Arizona, USA. It is a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions. The company's extensive product portfolio includes 8-bit, 16-bit, and 32-bit microcontrollers (MCUs) under the PIC, AVR, and SAM families, as well as dsPIC digital signal controllers. Key MCU product lines are the PIC10/PIC12/PIC16/PIC18 series for 8-bit, AVR for 8-bit and 32-bit, SAM ARM Cortex-M based MCUs, and the PIC32 family. In addition, Microchip offers a broad range of analog, power management, linear, mixed-signal, thermal management, and RF products. The company has expanded into FPGAs with the PolarFire family, enhancing its total system solution capability. Microchip holds a dominant position in the 8-bit MCU market and is consistently ranked among the top global MCU suppliers. Its products are used in a wide variety of applications including automotive, industrial, consumer, aerospace, defense, and IoT. Known for low risk development, lower total system cost, and fast time to market, Microchip provides outstanding technical support and reliable delivery. The company's technology strengths lie in low power, high performance, high integration, and ease of use.

IGBT Modules - 型号列表

483 parts in total

Mfr Part #	Quantity Available	Standard Package	RoHS	IGBT Type	Vgs (Max)	Power - Max	Voltage - Supply	Voltage - Input (Min)	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max)	Current - Collector Cutoff (Max)	Mounting Type	Package / Case	Supplier Device Package	Configuration	Product	Vce Saturation (Max)	Power - Average Forward	Current - Continuous Drain (Id) @ 25degC	Mounting Style	Manufacturer	Operating Temperature	Input	NTC Thermistor	Input Capacitance (Cies) @ Vce	Gate Charge (Qg) (Max) @ Vgs	Number of Positions	Packaging	Tradename	Factory Pack Quantity	Width	Height	Length	Input Type	Gate Charge	Switching Energy	Td (on/off) @ 25degC	Current - Collector Pulsed (Icm)	Test Condition	Standard Package Name	EU RoHS	Power Dissipation (Max)	Package Quantity	Channel Type	Lead Style
APTGF50DA120CT1G Trans IGBT Module N-CH 1.2KV 75A 10-Pin Case SP1 MOD IGBT NPT SIC CHOPPER SP1 Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	NPT	±20 V	312W	1200V	1200 V	3.7V @ 15V, 50A	75A	75 A	Screw	10Case SP1	SP1	Single	-	-	-	-	-	-	-	Standard	Yes	3.45nF @ 25V	-	10	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGF50SK120T1G Trans IGBT Module N-CH 1.2KV 75A 12-Pin Case SP1 IGBT 1200V 75A 312W SP1 Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	NPT	±20 V	312W	1200V	1200 V	3.7V @ 15V, 50A	75A	75 A	Screw	12Case SP1	SP1	Single	-	-	-	-	-	-	-	Standard	Yes	3.45nF @ 25V	-	12	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGF660U60D4G Trans IGBT Module N-CH 600V 860A 4-Pin Case D4 IGBT 600V 860A 2800W D4 Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	NPT	±20 V	2800W	600V	600 V	2.45V @ 15V, 800A	860A	860 A	Screw	4Case D4	D4	Single Dual Emitter	-	-	-	-	-	-	-	Standard	No	36nF @ 25V	-	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGL700U120D4G Trans IGBT Module N-CH 1.2KV 910A 5-Pin Case D-4 IGBT 1200V 910A 3000W D4 IGBT Modules Power Module - IGBT Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	Trench and Field Stop	±20 V	3000W	1200V	1200 V	2.2V @ 15V, 600A	910A	910 A	Screw	5Case D-4	D4	Single	IGBT Silicon Modules	1.8 V	3 kW	910 A	Screw	Microsemi	- 40 C	Standard	No	37.2nF @ 25V	-	5	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT100SK60T1G Trans IGBT Module N-CH 600V 150A 20-Pin Case SP4 IGBT 600V 150A 340W SP4 IGBT Modules Power Module - IGBT Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	Trench and Field Stop	±20 V	340W	600V	600 V	1.9V @ 15V, 100A	150A	150 A	Screw	20Case SP4	SP4	Single	IGBT Silicon Modules	1.5 V	340 W	150 A	Screw	Microsemi	- 40 C	Standard	Yes	6.1nF @ 25V	400 nA	20	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTGT600U120D4G Trans IGBT Module N-CH 1.2KV 900A 4-Pin Case D4 IGBT 1200V 900A 2500W D4 IGBT Modules Power Module - IGBT Microchip Technology Inc.	-	Bulk	Lead free / RoHS Compliant	Trench and Field Stop	±20 V	2500W	1200V	1200 V	2.1V @ 15V, 600A	900A	900 A	Screw	4Case D4	D4	Single Dual Emitter	IGBT Silicon Modules	1.7 V	2.5 kW	900 A	Screw	Microsemi	- 40 C	Standard	No	40nF @ 25V	400 nA	4	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 APT100GN120J Trans IGBT Chip N-CH 1.2KV 153A 4-Pin SOT-227 IGBT 1200V 153A 446W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	446W	1200V	1200 V	2.1V @ 15V, 100A	153A	153 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Modules	1.7 V	446 W	153 A	Screw	Microsemi	- 55 C to + 150 C	Standard	No	6.5nF @ 25V	600 nA	-	Bulk	ISOTOP	15	25.4 mm	9.6 mm	38.2 mm	-	-	-	-	-	-	-	-	-	-	-	-
APT100GN120JDQ4 Trans IGBT Chip N-CH 1.2KV 153A 4-Pin SOT-227 IGBT 1200V 153A 446W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	446W	1200V	1200 V	2.1V @ 15V, 100A	153A	153 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Carbide Modules	1.7 V	446 W	153 A	SMD/SMT	Microsemi	- 55 C	Standard	No	6.5nF @ 25V	600 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 APT100GT60JR Trans IGBT Chip N-CH 600V 148A 4-Pin SOT-227 IGBT 600V 148A 500W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	500W	600V	600 V	2.5V @ 15V, 100A	148A	148 A	Screw	4SOT-227	ISOTOP®	Single	IGBT Silicon Carbide Modules	2.1 V	500 W	148 A	SMD/SMT	Microsemi	- 55 C	Standard	No	5.15nF @ 25V	300 nA	4	Bulk	-	-	-	-	-	-	-	-	-	-	-	SOT-227	Compliant	500000	SOT-227	N	-
2 APT100GT60JRDQ4 Trans IGBT Chip N-CH 600V 148A 4-Pin SOT-227 IGBT 600V 148A 500W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	500W	600V	600 V	2.5V @ 15V, 100A	148A	148 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Carbide Modules	2.1 V	500 W	148 A	SMD/SMT	Microsemi	- 55 C	Standard	No	5.15nF @ 25V	300 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT150GN60B2G Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-247 IGBT 600V 220A 536W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	536W	600V	600 V	1.85V @ 15V, 150A	220A	220 A	Through Hole	3TO-247	*	Single	IGBT Silicon Carbide Modules	1.45 V	536 W	220 A	Through Hole	Microsemi	- 55 C	-	-	-	600 nA	-	Tube	-	-	-	-	-	Standard	970nC	8.81mJ (on), 4.295mJ (off)	44ns/430ns	450A	400V, 150A, 1 Ohm, 15V	-	-	-	-	-	-
3 APT150GN60J Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227 IGBT 600V 220A 536W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	536W	600V	600 V	1.85V @ 15V, 150A	220A	220 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Modules	1.5 V	536 W	220 A	Screw	Microsemi	- 55 C	Standard	No	9.2nF @ 25V	600 nA	-	-	ISOTOP	1	25.4 mm	9.6 mm	38.2 mm	-	-	-	-	-	-	-	-	-	-	-	-
3 APT150GN60JDQ4 Trans IGBT Chip N-CH 600V 220A 4-Pin SOT-227 IGBT 600V 220A 536W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	536W	600V	600 V	1.85V @ 15V, 150A	220A	220 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Modules	1.5 V	536 W	220 A	Screw	Microsemi	- 55 C to + 175 C	Standard	No	9.2nF @ 25V	600 nA	4	Tray	ISOTOP	1	25.4 mm	9.6 mm	38.2 mm	-	-	-	-	-	-	SOT-227	Compliant	536000	SOT-227	N	Screw
APT150GN60LDQ4G Trans IGBT Chip N-CH 600V 220A 3-Pin(3+Tab) TO-264 IGBT 600V 220A 536W TO-264L IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	Trench and Field Stop	±30 V	536W	600V	600 V	1.85V @ 15V, 150A	220A	220 A	Through Hole	3TO-264	TO-264 [L]	Single	IGBT Silicon Carbide Modules	1.45 V	536 W	220 A	Through Hole	Microsemi	- 55 C	-	-	-	600 nA	-	Tube	-	-	-	-	-	Standard	970nC	8.81mJ (on), 4.295mJ (off)	44ns/430ns	450A	400V, 150A, 1 Ohm, 15V	-	-	-	-	-	-
APT200GT60JR Trans IGBT Chip N-CH 600V 195A 4-Pin SOT-227 IGBT 600V 195A ISOTOP IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	500W	600V	600 V	2.5V @ 15V, 200A	195A	195 A	Screw	4SOT-227	SOT-227	Single Dual Emitter	IGBT Silicon Carbide Modules	2 V	500 W	195 A	SMD/SMT	Microsemi	- 55 C	Standard	No	8.65nF @ 25V	300 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 APT46GA90JD40 Trans IGBT Chip N-CH 900V 87A 4-Pin SOT-227 IGBT 900V 87A 284W SOT-227 IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	PT	±30 V	284W	900V	900 V	3.1V @ 15V, 47A	87A	87 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Modules	2.5 V	284 W	87 A	Screw	Microsemi	- 55 C	Standard	No	4.17nF @ 25V	100 nA	-	-	POWER MOS 8, ISOTOP	1	25.4 mm	9.6 mm	38.2 mm	-	-	-	-	-	-	-	-	-	-	-	-
APT50GF120B2RG Trans IGBT Chip N-CH 1.2KV 135A 3-Pin(3+Tab) T-MAX IGBT 1200V 135A 781W TMAX IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	781W	1200V	1200 V	3V @ 15V, 50A	135A	135 A	Through Hole	3T-MAX	*	Single	IGBT Silicon Carbide Modules	2.5 V	781 W	135 A	Through Hole	Microsemi	- 55 C	-	-	-	+/- 100 nA	-	Tube	-	-	-	-	-	Standard	340nC	3.6mJ (on), 2.64mJ (off)	25ns/260ns	150A	800V, 50A, 1 Ohm, 15V	-	-	-	-	-	-
3 APT50GF120JRDQ3 Trans IGBT Chip N-CH 1.2KV 120A 4-Pin SOT-227 IGBT 1200V 120A 521W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	521W	1200V	1200 V	3V @ 15V, 75A	120A	120 A	Screw	4SOT-227	ISOTOP®	Single	IGBT Silicon Modules	2.5 V	521 W	120 A	Screw	Microsemi	- 55 C to + 150 C	Standard	No	5.32nF @ 25V	100 nA	-	Bulk	ISOTOP	1	25.4 mm	9.6 mm	38.2 mm	-	-	-	-	-	-	-	-	-	-	-	-
2 APT50GF120LRG Trans IGBT Chip N-CH 1.2KV 135A 3-Pin(3+Tab) TO-264 IGBT 1200V 135A 781W TO264 IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	NPT	±30 V	781W	1200V	1200 V	3V @ 15V, 50A	135A	135 A	Through Hole	3TO-264	TO-264 [L]	Single	IGBT Silicon Carbide Modules	2.5 V	781 W	135 A	Through Hole	Microsemi	- 55 C	-	-	-	+/- 100 nA	-	Tube	-	-	-	-	-	Standard	340nC	3.6mJ (on), 2.64mJ (off)	25ns/260ns	150A	800V, 50A, 1 Ohm, 15V	-	-	-	-	-	-
APT50GP60J Trans IGBT Chip N-CH 600V 100A 4-Pin SOT-227 IGBT 600V 100A 329W SOT227 IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single Microchip Technology Inc.	-	Rail / Tube	Lead free / RoHS Compliant	PT	±20 V	329W	600V	600 V	2.7V @ 15V, 50A	100A	100 A	Screw	4SOT-227	ISOTOP®	Single Dual Emitter	IGBT Silicon Modules	2.2 V	329 W	100 A	SMD/SMT	Microsemi	- 55 C	Standard	No	5.7nF @ 25V	+/- 100 nA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-