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ROHM Co., Ltd.
High-Power Discrete Semiconductor Modules

ROHM Co., Ltd.- High-Power Discrete Semiconductor Modules

ROHM Co., Ltd., established in 1958 and headquartered in Kyoto, Japan, is a globally renowned multinational semiconductor and electronic component manufacturer. Upholding the corporate policy of 'Quality First', ROHM places product reliability at the core of all operations. The company designs and manufactures a comprehensive portfolio of integrated circuits (ICs), discrete semiconductors, optical components, passive components, modules, and medical devices. Key IC product lines include power management ICs, motor drivers, LED drivers, and standard logic ICs, along with specialized analog solutions like operational amplifiers and comparators. In the discrete space, ROHM is a leader in power devices, notably offering a wide range of silicon carbide (SiC) MOSFETs and Schottky barrier diodes, IGBTs, and EcoGaN™ gallium nitride devices for high-efficiency power conversion. The company also provides a vast array of sensors, including Hall effect, temperature, and ambient light sensors, as well as high-reliability resistors and silicon capacitors. With a strong focus on automotive and industrial markets, ROHM has earned a reputation for providing robust, long-lifecycle products that meet stringent reliability standards. The company operates a global network of design, sales, and manufacturing facilities, and has a significant presence in China, with factories in Dalian and Tianjin and design and quality assurance centers in Shanghai and Shenzhen. ROHM’s technology leadership in system ICs and advanced power solutions has positioned it as a top-tier supplier in the worldwide electronics industry.

High-Power Discrete Semiconductor Modules - 型号列表

177 parts in total

Mfr Part #	Quantity Available	Price	Current - Continuous Drain (Id) @ 25degC	Packaging	Package / Case	Operating Temperature	Series	Vgs(th) (Max) @ Id	FET Feature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Vgs (Max)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Part Status	Mfr	Grade	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Base Product Number	RoHS	Manufacturer	Configuration	Power - Max	Product	Factory Pack Quantity	Power - Average Forward	Vce(on) (Max) @ Vge, Ic	Mounting Style	Type	Standard Package	Tariff No	Transistor Type	Voltage - Threshold	Weight	Number of Pins	Material Finish	Number of Channels	Automotive	Leadfree Defin	Idle Current, Typ @ 25degC	Voltage - Supply (Vcc/Vdd)	Height	Length	Fall Time	Rise Time (Typ)	Delay to 1st Tap	Switch Time (Ton, Toff) (Max)
3 BSM120D12P2C005 SIC PWR MODULE 1200V 120A Discrete Semiconductor Modules Mod: 1200V 120A (w/ Diode) MODULE, POWER, SIC, 1200V, 120A SiC Power Module 120A 1200V Rohm Semiconductor	12	12: ¥1,989.252	120A	*	Module	:-40°C	*	2.7V @ 22mA	Silicon Carbide (SiC)	1200V (1.2kV)	14000pF @ 10V	*	Module	-	2 N-Channel (Half Bridge)	:780W	-	-	-	-	-	-	-	-	-	RoHS Compliant	-	-	780W	-	-	-	-	-	-	1	85359000	:N Channel	:2.7V	0.05	:10	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
3 BSM180D12P2C101 SIC PWR MOD DMOS HALF BRIDGE MODULE, POWER, SIC, 1200V, 180A Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) SiC Power Module 180A 1200V Rohm Semiconductor	12	1: ¥7,068.9639	180A	Bulk	Module	:-40°C	*	4V @ 35.2mA	Silicon Carbide (SiC)	1200V (1.2kV)	23000pF @ 10V	*	Module	-	2 N-Channel (Half Bridge)	:1.13kW	-	-	-	-	-	-	-	-	-	-	-	-	1130W	-	-	-	-	-	-	1	85359000	:N Channel	:2.7V	0.05	:10	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	-	-	-
BSM300D12P2E001 MOSFET 2N-CH 1200V 300A Discrete Semiconductor Modules 300A SiC Power Module SICDMOS 1200V 300A 1.6V Modul Rohm Semiconductor	10	1: ¥4,643.7461	300 A	Tray	MODUL	- 40 C	BSMx	2.7 V	-	-	-	-	-	22 V	-	-	THT mOhm	SiC nC	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	SiC-DSMOSFET, SiC-SBD	-	Power MOSFET Modules	4	1875 W	1.6 V	Screw	SiC Power Module	-	-	-	-	-	-	-	1 Channel	NO	RoHS-conform	1450 A	300 V	17 mm	122 mm	-	-	-	-
BSM080D12P2C008 Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V ROHM Semiconductor	12	1: ¥2,224.535	80 A	Bulk	Module	+ 150 C	BSMx	-	-	-	-	-	-	- 6 V, + 22 V	-	-	-	-	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	Half-Bridge	-	Power Semiconductor Modules	12	600 W	1.2 kV	Screw	SiC Power Module	-	-	-	-	-	-	-	2 Channel	-	-	-	-	-	-	-	-	-	-
BSM180D12P3C007 Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD ROHM Semiconductor	12	1: ¥10,161.6357	180 A	Tray	Module	+ 150 C	-	-	-	-	-	-	-	- 4 V, + 22 V	-	-	-	-	-	-	-	-	-	-	-	RoHS Compliant	ROHM Semiconductor	Half-Bridge	-	Power Semiconductor Modules	12	880 W	1200 V	Screw	SiC Power Module	-	-	-	-	-	-	-	-	-	-	-	-	-	-	50 ns	70 ns	165 ns	50 ns
R6511KNXC7G . R6511KNXC7G - N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	90	3: ¥22.0959	11A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 320µA	-	650 V	760 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	53W (Tc)	400mOhm @ 3.8A, 10V	22 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6511	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6524KNX3C16 . R6524KNX3C16 - N-Channel 650 V 24A (Tc) 253W (Tc) Through Hole TO-220AB from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1000: ¥14.6539	24A (Tc)	Tape & Reel (TR), Cut Tape (CT)	TO-220-3	150°C (TJ)	-	5V @ 750µA	-	650 V	1850 pF @ 25 V	Through Hole	TO-220AB	±20V	N-Channel	253W (Tc)	185mOhm @ 11.3A, 10V	45 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6524	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6511ENXC7G . R6511ENXC7G - N-Channel 650 V 11A (Ta) 53W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	54	3: ¥22.098	11A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 320µA	-	650 V	670 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	53W (Tc)	400mOhm @ 3.8A, 10V	32 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6511	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6015KNXC7G . R6015KNXC7G - N-Channel 600 V 15A (Tc) 60W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	810	7: ¥22.7295	15A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	1050 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	60W (Tc)	290mOhm @ 6.5A, 10V	27.5 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6015	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6009ENXC7G . R6009ENXC7G - N-Channel 600 V 9A (Ta) 48W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	100: ¥15.3921	9A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 1mA	-	600 V	430 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	48W (Tc)	535mOhm @ 2.8A, 10V	23 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6009	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4062KEHRC11 . SCT4062KEHRC11 - N-Channel 1200 V 26A (Tc) 115W Through Hole TO-247N from Rohm Semiconductor. from now! ROHM Co., Ltd.	260	2: ¥82.0541	26A (Tc)	Tube	TO-247-3	175°C (TJ)	-	4.8V @ 6.45mA	-	1200 V	1498 pF @ 800 V	Through Hole	TO-247N	+21V, -4V	N-Channel	115W	81mOhm @ 12A, 18V	64 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6007ENXC7G . R6007ENXC7G - N-Channel 600 V 7A (Ta) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1050	100: ¥14.7507	7A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 1mA	-	600 V	390 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	620mOhm @ 2.4A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6007	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R8005ANJGTL . R8005ANJGTL - N-Channel 800 V 5A (Tc) 120W (Tc) Surface Mount TO-263S from Rohm Semiconductor. from now! ROHM Co., Ltd.	1964	1: ¥31.008	5A (Tc)	Tape & Reel (TR), Cut Tape (CT)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	150°C (TJ)	-	5V @ 1mA	-	800 V	500 pF @ 25 V	Surface Mount	TO-263S	±30V	N-Channel	120W (Tc)	2.1Ohm @ 2.5A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R8005	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4026DRHRC15 . SCT4026DRHRC15 - N-Channel 750 V 56A (Tc) 176W Through Hole TO-247-4L from Rohm Semiconductor. from now! ROHM Co., Ltd.	30	30: ¥47.5956	56A (Tc)	Tube	TO-247-4	175°C (TJ)	-	4.8V @ 15.4mA	-	750 V	2320 pF @ 500 V	Through Hole	TO-247-4L	+21V, -4V	N-Channel	176W	34mOhm @ 29A, 18V	94 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6520ENXC7G . R6520ENXC7G - N-Channel 650 V 20A (Tc) 68W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	1: ¥22.3044	20A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 630µA	-	650 V	1400 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	68W (Tc)	205mOhm @ 9.5A, 10V	61 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6520	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6020KNXC7G . R6020KNXC7G - N-Channel 600 V 20A (Tc) 68W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	816	7: ¥23.199	20A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	1550 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	68W (Tc)	196mOhm @ 9.5A, 10V	40 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6020	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6007KNXC7G . R6007KNXC7G - N-Channel 600 V 7A (Tc) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	100: ¥14.7507	7A (Tc)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	5V @ 1mA	-	600 V	470 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	620mOhm @ 2.4A, 10V	14.5 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6007	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6507ENXC7G . R6507ENXC7G - N-Channel 650 V 7A (Ta) 46W (Tc) Through Hole TO-220FM from Rohm Semiconductor. from now! ROHM Co., Ltd.	1000	20: ¥10.5407	7A (Ta)	Tube	TO-220-3 Full Pack	150°C (TJ)	-	4V @ 200µA	-	650 V	390 pF @ 25 V	Through Hole	TO-220FM	±20V	N-Channel	46W (Tc)	665mOhm @ 2.4A, 10V	20 nC @ 10 V	MOSFET (Metal Oxide)	Active	Rohm Semiconductor	-	-	10V	R6507	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SCT4045DRHRC15 . SCT4045DRHRC15 - N-Channel 750 V 34A (Tc) 115W Through Hole TO-247-4L from Rohm Semiconductor. from now! ROHM Co., Ltd.	440	2: ¥79.9173	34A (Tc)	Tube	TO-247-4	175°C (TJ)	-	4.8V @ 8.89mA	-	750 V	1460 pF @ 500 V	Through Hole	TO-247-4L	+21V, -4V	N-Channel	115W	59mOhm @ 17A, 18V	63 nC @ 18 V	SiCFET (Silicon Carbide)	Active	Rohm Semiconductor	Automotive	AEC-Q101	18V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SP8M21HZGTB . SP8M21HZGTB - Mosfet Array 45V 6A (Ta), 4A (Ta) 2W (Ta) Surface Mount 8-SOP from Rohm Semiconductor. from now! ROHM Co., Ltd.	10	1: ¥17,034.00	6A (Ta), 4A (Ta)	Tape & Reel (TR), Cut Tape (CT), Digi-Reel®	8-SOIC (0.154", 3.90mm Width)	150°C (TJ)	-	2.5V @ 1mA	-	45V	1400pF @ 10V, 2400pF @10V	Surface Mount	8-SOP	-	-	-	25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V	21.6nC @ 5V, 28nC @ 5V	MOSFET (Metal Oxide)	Active	-	-	-	-	SP8M21	-	Rohm Semiconductor	N and P-Channel	2W (Ta)	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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ROHM Co., Ltd.- High-Power Discrete Semiconductor Modules

High-Power Discrete Semiconductor Modules - 型号列表

Current - Continuous Drain (Id) @ 25degC

Input Capacitance (Ciss) (Max) @ Vds

Vgs(th) (Max) @ Id

Rds On (Max) @ Id, Vgs

Gate Charge (Qg) (Max) @ Vgs

Power Dissipation (Max)

Base Product Number

Package / Case

Drain to Source Voltage (Vdss)

Supplier Device Package

Packaging

Vgs (Max)

Operating Temperature

Power - Max

Mounting Type

Power - Average Forward

Vce(on) (Max) @ Vge, Ic

Configuration

FET Type

Series

Product

Factory Pack Quantity

Number of Channels

Manufacturer

Technology

Drive Voltage (Max Rds On, Min Rds On)