STMicroelectronics N.V.- DIACs - Trigger Diodes

STMicroelectronics N.V., commonly known as ST, was formed in 1987 through the merger of Italian SGS Microelettronica and French Thomson Semiconducteurs. Headquartered in Geneva, Switzerland, it is one of the largest semiconductor companies globally. The company went public in 1994 and is listed on the New York Stock Exchange (NYSE: STM), Euronext Paris, and Borsa Italiana in Milan. STMicroelectronics serves customers across a broad spectrum of electronics applications with innovative semiconductor solutions. Its core business areas include automotive, industrial, personal electronics, and communications infrastructure. The company boasts an extensive product portfolio featuring microcontrollers (MCU), specifically the STM32 family which is widely adopted for embedded applications. In analog and mixed-signal ICs, ST offers operational amplifiers, comparators, and data converters, while its power management products include a wide range of voltage regulators and motor drivers. ST is a leader in power discrete and modules, such as MOSFETs, IGBTs, and silicon carbide (SiC) devices, crucial for high-efficiency power conversion. The sensor product line covers MEMS sensors like accelerometers, gyroscopes, and environmental sensors, as well as time-of-flight ranging sensors. ST is recognized as a top-tier semiconductor company, consistently ranking among the top 10 globally by revenue, and holds leading market positions in automotive ICs, MEMS sensors, and general-purpose MCUs, leveraging its advanced manufacturing and R&D strengths.

DIACs - Trigger Diodes - 型号列表

236 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	Power Dissipation (Max)	Packaging	Mounting Type	Package / Case	RoHS	Number of Positions	EU RoHS	Package Quantity	Supplier Device Package	On-State Resistance (Max)	Lead Style	Operating Temperature	MOQ	Unit Pack	Product Category	Standard Package Name	Power - Rated	Width	Mounting Style	Transistor Type	Current - Drain (Idss) @ Vds (Vgs=0)	Weight	Rds On (Max) @ Id, Vgs	Vce(on) (Max) @ Vge, Ic	Length - Overall	Type	Printed Circuit Board	SVHC	Tariff No	Number of Pins	Factory Pack Quantity	Voltage - Supply	Shell Size - Insert	Other Names	Operating Temperature - Junction	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25degC	Number of Outputs	Current - Peak Output	Current - Output (Typ)	Leadfree Defin	Matchcode	Standard Leadtime	Voltage - Threshold	Resistance - RDS(On)	Material Finish	Current - Output	Tab Width	Voltage - Input (Min)	Current - Leakage (IS(off)) (Max)	Input Type	Voltage Rating	Automotive	FET Type	FET Feature	Power - Max	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Fall Time	Rise Time (Typ)	Length	Configuration	Contact Voltage (Max)	Fault Protection	Channels	Rds On (Typ)	Current - Trip (It)	Number of Elements	Voltage - Breakdown	Current - Peak Pulse (10/1000us)	Channel Type	Package Cooled	Termination	Current Transfer Ratio (Min)	Voltage - Gate Trigger (Vgt) (Max)	Height	Size / Dimension	Current Rating (Max)	Delay to 1st Tap	Gate Charge	Current - Peak Pulse (8/20us)	Rad Hardened	Polarity	Schematic	Card Standard	Voltage	SCR Type	Tolerance	Voltage - Max	Current - Breakover	LED Forward Current	Voltage - Breakover	Current - Off State (Max)	Voltage - Protection Rating (VPR)	Series	Diode Type	Triac Type	Utilized IC / Part	Voltage - Clamping	Spg	DELETED	Switch Type	Number of Units	Other Specifications	Diameter - Outside	Current - Short Circuit (Isc)	Module/Board Type	Current	Slew Rate	Capacitance Ratio Condition	Delay Time - ON	Delay Time - OFF	Current Transfer Ratio (Max)	Depth	Polarization	Tape Width - Max	SMD Marking	Temperature - Test	Logic Type	Power (Watts) - Per Port	Voltage - Supply (Vcc/Vdd)	Switch Time (Ton, Toff) (Max)	Technology	Thermal Resistance @ GPM
2 VNB10N07 Power Switch Lo Side 7A 3-Pin(2+Tab) D2PAK Tube OMNIFET 70V 100 MOSFET POWER 70V 10A D2PAK VNB10N07, MOSFET Transistor, 3-Pin D2PAK MOSFET N-Ch 70V 10A OmniFET MOSFETVNB10N07 stmicroelectronics	3543	1: ¥16.5648	Rail / Tube	50000 mW	Tube	Surface Mount	3D2PAK	Lead free / RoHS Compliant	3	Not Compliant	D2PAK	D2PAK	0.14(Max) Ohm	Gull-wing	- 55 C	800	50	MOSFET	D2PAK	50 W	9.35mm	SMD/SMT	N-Channel	10 A	0.011640 oz	100 mOhms	70 V	10.28(Max)	Low Side	2	-	-	-	50	70(Max) V	4.6(Max)	-	-	-	-	-	1	10A	7 A	-	-	-	-	-	-	0.25 mA	Tab	-	-	Non-Inverting	18(Max) V	-	-	-	-	-	-	-	100 ns	80 ns	10.28mm	Single	-	-	-	-	-	-	-	-	-	D2PAK	-	-	-	4.6mm	10.28 x 9.35 x 4.6mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
8 DB4 Thyristor DIAC 2-Pin DO-35 T/R DIAC 40V +-5V 50uA DO35 DIAC 35-45V 2A DO35 Diacs 40 Volt Trigger DIAC, 35V to 45V, 300mA, DO-35, FULL REEL DIAC, DO-35 Trigger diode DO-35 35...45 V PU=5000 ST, DB4, ST STMicroelectronics 二端交流开关, 45V, 2针 DO-35封装, 2A stmicroelectronics	13597	1: ¥1.836	Cut Tape	:150mW	Tape and Reel	Through Hole	2DO-35	Lead free / RoHS Compliant	2	Compliant	DO-35	DO-35	-	Through Hole	-40 to 125 °C	10000	5000	Diacs	DO-204-AH	-	-	Through Hole	-	-	0	-	-	4.5(Max)	DIAC	2	:No SVHC (20-Jun-2013)	85413000	:2	5000	-	-	497-7223-1	-40 to 125	-	-	-	-	2A	-	RoHS-conform	DB4	18 weeks	-	-	-	-	-	:35V	0.01 mA	-	-	-	-	-	-	-	-	-	-	-	:4.5mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:300mA	-	-	-	-	:40V	:DO-35	5V	:45V	50µA	:2A	50yA	0.01 mA	36 V	DB4	:Diac	:Diac	:DB4	-	-	-	-	-	-	:2mm	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 VNS1NV04D Power Switch Lo Side 2.6A 8-Pin SO N Tube OMNIFET 40V 250 MOSFET, SMART SWITCH, SO-8 stmicroelectronics	10	1370: ¥5.4944	Rail / Tube	4000 mW	Tube	Surface Mount	8SO N	-	8	Not Compliant	SO N	-	0.25(Max) Ohm	Gull-wing	-40 to 150 °C	2000	100	-	SOIC	-	4(Max)	-	:N Channel	-	0.002	-	-	5(Max)	Low Side	8	:No SVHC (20-Jun-2013)	85423290	:8	-	45(Max) V	1.65(Max)	-	-	:25V	:55V	:1.7A	2	-	2.6(Max) A	-	-	-	:2.5V	:250mohm	:MSL 3 - 168 hours	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:45V	-	-	-	-	-	-	-	-	-	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:45V	-	-	-	-	-	-	:1.7A	:Dual	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 VNP35N07-E Power Switch Lo Side 35A 3-Pin(3+Tab) TO-220 Tube LSS 28mOhm 70V TO220-3 THT MOSFET OMNIFET 70V 35A TO-220 MOSFET N-Ch 70V 35A OmniFET Transistor: N-MOSFET; unipolar; 70V; 35A; TO220 Power FET TO-220 N 70 V 35 A, VNP35N07-E, ST STMicroelectronics 智能电源开关, 35A, 70V, 3针 TO-220封装 stmicroelectronics	32	1: ¥66.4335	Rail / Tube	125000 mW	Tube	Through Hole	3TO-220	Lead free / RoHS Compliant	3	Compliant	TO-220	TO-220AB	0.028(Max) Ohm	Through Hole	:-55°C	1000	50	MOSFET	TO-220	125 W	4.6(Max)	Through Hole	N-Channel	35 A	0.00195	28 mOhms	70 V	10.4(Max)	Low Side	3	:No SVHC (20-Jun-2013)	85412900	:3	50	70(Max) V	9.15(Max)	-	-40°C	:10V	:80V	:18A	1	35A	35(Max) A	RoHS-conform	VNP35N07-E	42 weeks	:3V	:28mohm	:-	35 A	Tab	70V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	-	-	:70V	NANY/N/NA/NAN	1	28mOhm	35A	-	-	-	-	TO-220	:Through Hole	25 S	-	-	-	:35A	-	-	-	No	unipolar	see	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	20	Compliant	Low Side	1	VNP35N07	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
VNS1NV04D13TR Power Switch Lo Side 2.6A 8-Pin SO N T/R MOSFET N-Ch 40V 1.7A Omni stmicroelectronics	10	1710: ¥5.4944	Tape & Reel	4000 mW	Tape and Reel	Surface Mount	8SO N	No	8	Not Compliant	SO N	-	0.25(Max) Ohm	Gull-wing	-40 to 150 °C	-	-	MOSFET	SOIC	4 W	4(Max)	SMD/SMT	-	-	-	-	-	5(Max)	Low Side	8	-	-	-	2500	45(Max) V	1.65(Max)	-	-	-	-	-	2	-	2.6(Max) A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 VND7N04TR-E Power Switch Lo Side 4A 3-Pin(2+Tab) DPAK T/R LSS 140mOhm 42V TO252-3 SMD MOSFET OMNIFET 42V 7A DPAK MOSFET N-Ch 42V 7A OmniFET VND7N04 Single Low Side Autoprotected 42 V 7 A 0.14 Ohm Power MOSFET -TO-252-3 stmicroelectronics	2445	1: ¥10.88	Tape & Reel	60000 mW	REEL	Surface Mount	3DPAK	Lead free / RoHS Compliant	3	Compliant	DPAK	D-Pak	0.28(Max) Ohm	Gull-wing	-	2500	2500	MOSFET	DPAK	60 W	6.2(Max)	SMD/SMT	N-Channel	7 A	-	140 mOhms	42 V	6.6(Max)	Low Side	2	-	-	-	2500	42(Max) V	2.4(Max)	-	-40°C	-	-	-	1	9A	4 A	RoHS-conform	VND7N04TR-E	42 weeks	-	-	-	0.25 mA	Tab	42V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	-	-	-	NANY/N/NA/NAN	1	140mOhm	7A	-	-	-	-	-	-	5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
9 SMDB3 Thyristor DIAC 3-Pin SOT-23 T/R DIAC 32V +-4V 10uA SOT23 DIAC 28-36V 1A SOT23-3 SMDB3, DIAC, 36V, 3-Pin SOT-23 Diacs 32 Volt Trigger DIAC, IN, SOT23 DIAC1A36VSOT-23 Trigger diode SOT-23 28...36 V, SMDB3, ST STMicroelectronics 二端交流开关, 36V, 3针 SOT-23封装, 1A stmicroelectronics	10	1: ¥15.5568	Tape & Reel	:150mW	Tape and Reel	Surface Mount	3SOT-23	Lead free / RoHS Compliant	3	Compliant	SOT-23	SOT-23-3	-	Gull-wing	-40 to 125 °C	3000	3000	Diacs	SOT-23	-	1.3mm	SMD/SMT	-	-	0.00001	-	-	-	DIAC	-	:No SVHC (20-Jun-2013)	85413000	:3	3000	-	-	497-3148-2	-40 to 125	-	-	-	-	1A	-	RoHS-conform	SMDB3	14 weeks	-	-	-	0.01	-	:36V	0.01 mA	-	-	-	-	-	-	-	-	-	-	-	2.9mm	-	-	-	-	-	-	-	-	-	-	SOT-23	-	-	-	0.95mm	2.9 x 1.3 x 0.95mm	-	-	-	-	No	-	-	-	:32V	:SOT-23	4V	:36V	10µA	:1A	10yA	0.01 mA	36 V	SMDB3	:Diac	:Diac	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 VND5N07-E Power Switch Lo Side 5A 3-Pin(2+Tab) TO-252 Tube LSS 200mOhm 70V TO252-3 SMD MOSFET N-CH 70V 5A TO252 VND5N07, MOSFET Transistor, 3-Pin TO-252 STMicroelectronics , 单输出智能电源开关, 5A, 70V, 3针 TO-252封装 MOSFET N-Ch 70V 5A OmniFET stmicroelectronics	6402	1: ¥12.172	Rail / Tube	60000 mW	TUBE	Surface Mount	3TO-252	Lead free / RoHS Compliant	3	-	-	TO-252	0.2(Max) Ohm	-	-40 to 150 °C	3000	75	-	-	60 W	6.2mm	-	-	-	-	-	-	-	Low Side	-	-	-	-	-	70(Max) V	-	VND5N07E	-40°C	-	-	-	1	5A	5(Max) A	RoHS-conform	VND5N07-E	42 weeks	-	-	-	0.25 mA	-	70V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	6.6mm	-	-	NANY/N/NA/NAN	1	200mOhm	5A	-	-	-	-	TO-252	-	-	-	2.4mm	6.6 x 6.2 x 2.4mm	-	-	-	-	No	-	-	Power Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	Compliant	Low Side	-	VND5N07	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 VNP28N04-E Power Switch Lo Side 20A 3-Pin(3+Tab) TO-220 Tube LSS 35mOhm 42V TO220-3 THT MOSFET OMNIFET 42V 28A TO-220 VNP28N04-E, MOSFET Transistor, 3-Pin TO-220 TRANSISTORVNP28N04 Transistor: N-MOSFET; unipolar; 42V; 28A; 83W; TO220 stmicroelectronics	10	740: ¥9.452	Rail / Tube	83000 mW	Tube	Through Hole	3TO-220	Lead free / RoHS Compliant	3	Compliant	TO-220	TO-220AB	0.05(Max) Ohm	Through Hole	:-55°C	1000	50	-	TO-220	83W	4.6mm	-	:N Channel	28A	0.00195	-	42V	10.4(Max)	Low Side	3	:No SVHC (20-Jun-2013)	85412900	:3	-	42(Max) V	9.15(Max)	-	-40°C	:10V	:48V	:14A	1	28A	20 A	RoHS-conform	VNP28N04-E	42 weeks	:3V	:35mohm	:-	0.25 mA	Tab	42V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	10.4mm	-	:42V	NANY/N/NA/NAN	1	35mOhm	28A	-	-	-	-	TO-220	:Through Hole	-	-	9.15mm	10.4 x 4.6 x 9.15mm	:28A	-	-	-	-	unipolar	see	Power Switch	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 VNB20N07-E Power Switch Lo Side 14A 3-Pin(2+Tab) D2PAK Tube LSS 50mOhm 70V TO263-3 SMD MOSFET OMNIFET 70V 20A D2PAK MOSFET N-Ch 70V 20A OmniFET Transistor: N-MOSFET; unipolar; 70V; 20A; 83W; D2PAK STMicroelectronics 负载开关集成电路, 3针 D2PAK封装 stmicroelectronics	396	1: ¥20.06	Rail / Tube	83000 mW	Tube	Surface Mount	3D2PAK	Lead free / RoHS Compliant	3	Compliant	D2PAK	D2PAK	0.07(Max) Ohm	Gull-wing	-	800	50	MOSFET	D2PAK	83 W	9.35(Max)	SMD/SMT	N-Channel	20 A	3.08 g	50 mOhms	70 V	10.4(Max)	Low Side	2	-	-	-	50	70(Max) V	4.6(Max)	-	-40°C	-	-	-	1	20A	14 A	RoHS-conform	VNB20N07-E	46 weeks	-	-	-	0.25 mA	Tab	70V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	150 ns	240 ns	-	Single	-	NANY/N/NA/NAN	1	50mOhm	20A	-	-	-	-	-	-	17 S	-	-	-	-	430 ns	60 nC	-	-	unipolar	see	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	150	-	-	1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 VNB20N07TR-E Power Switch Lo Side 14A 3-Pin(2+Tab) D2PAK T/R LSS 50mOhm 70V TO263-3 SMD MOSFET OMNIFET 70V 20A D2PAK MOSFET N-Ch 70V 20A OmniFET STMicroelectronics 负载开关集成电路, 3针 D2PAK封装 stmicroelectronics	7300	1: ¥22.372	Tape & Reel	83000 mW	Tape and Reel	Surface Mount	3D2PAK	Lead free / RoHS Compliant	3	Compliant	D2PAK	D2PAK	0.07(Max) Ohm	Gull-wing	-	1000	1000	MOSFET	D2PAK	83 W	9.35(Max)	SMD/SMT	-	-	-	-	-	10.4(Max)	Low Side	2	-	-	-	1000	70(Max) V	4.6(Max)	-	-40°C	-	-	-	1	20A	14 A	RoHS-conform	VNB20N07TR-E	46 weeks	-	-	-	0.25 mA	Tab	70V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	-	-	-	NANY/N/NA/NAN	1	50mOhm	14A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 VND7N04-E Power Switch Lo Side 4A 3-Pin(2+Tab) DPAK Tube LSS 140mOhm 42V TO252-3 SMD MOSFET OMNIFET 42V 7A DPAK MOSFET N-Ch 42V 7A OmniFET Power FET DPAK N 42 V 7 A, VND7N04-E, ST stmicroelectronics	10	2230: ¥4.7464	Rail / Tube	60000 mW	Tube	Surface Mount	3DPAK	Lead free / RoHS Compliant	3	Compliant	DPAK	D-Pak	0.28(Max) Ohm	Gull-wing	-	3000	75	MOSFET	DPAK	60 W	6.2(Max)	SMD/SMT	N-Channel	7 A	-	140 mOhms	42 V	6.6(Max)	Low Side	2	-	-	-	75	42(Max) V	2.4(Max)	-	-40°C	-	-	-	1	9A	4 A	RoHS-conform	VND7N04-E	42 weeks	-	-	-	0.25 mA	Tab	42V	NY/N/NA/NAN	Non-Inverting	18(Max) V	AEC-Q(100)	-	-	-	-	-	-	-	-	-	-	-	NANY/N/NA/NAN	1	140mOhm	7A	-	-	-	-	-	-	5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 STL24NM60N MOSFET N-Ch 600V 0.200 Ohm 16 A HV Mdmesh II Trans MOSFET N-CH 600V 16A 4-Pin Power Flat T/R MOSFET 600V 0.2 MOSFET N-CH 600V 16A POWERFLAT MOSFET, N CH, 600V, 16A, POWERFLAT STMicroelectronics	6987	1: ¥36.176	3,000	:125W	Tape and Reel	Surface Mount	4-PowerFlat™ HV	Lead free / RoHS Compliant	4	Compliant	Power Flat	PowerFlat™ (8x8) HV	215@10V	No Lead	:150°C	3000	3000	MOSFET	-	3 W	-	SMD/SMT	N-Channel	16 A	0.03	215 mOhm @ 8A, 10V	600 V	-	-	-	:No SVHC (20-Jun-2013)	85412900	:5	-	-	-	497-11206-2	-	:10V	600V	3.3A (Ta), 16A (Tc)	-	-	-	-	-	-	:4V	:0.2ohm	:MSL 3 - 168 hours	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	125W	5V @ 250µA	46nC @ 10V	1400pF @ 50V	37 ns	16.5 ns	-	-	-	-	-	-	-	1	600	16	Enhancement	-	-	-	25 V	-	-	-	-	46 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 STL26NM60N MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II Trans MOSFET N-CH 600V 19A 4-Pin Power Flat T/R MOSFET 600V 0.1 MOSFET N-CH 600V 19A POWERFLAT MOSFET, N CH, 600V, 19A, POWERFLAT STMicroelectronics	10	1: ¥22.10	3,000	:125W	Tape and Reel	Surface Mount	5-PowerFlat™ HV	Lead free / RoHS Compliant	4	Compliant	Power Flat	5-PowerFlat™ HV (8x8)	185@10V	No Lead	:150°C	3000	3000	MOSFET	-	3 W	-	SMD/SMT	N-Channel	19 A	0.03	185 mOhm @ 10A, 10V	600 V	-	-	-	:No SVHC (20-Jun-2013)	85412900	:5	-	-	-	497-11207-2	-	:10V	600V	2.7A (Ta), 19A (Tc)	-	-	-	-	-	-	:4V	:0.16ohm	:MSL 3 - 168 hours	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	125mW	5V @ 250µA	60nC @ 10V	1800pF @ 50V	50 ns	25 ns	-	-	-	-	-	-	-	1	600	19	Enhancement	-	-	-	25 V	-	-	-	-	60 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 STL55NH3LL MOSFET N-channel 30 V MOSFET N-CH 30V 15A POWERFLAT MOSFET, N CH, 30V, 15A, POWERFLAT STMicroelectronics	5892	1: ¥12.104	3,000	:60W	Tape & Reel (TR)	Surface Mount	8-PowerVDFN	Lead free / RoHS Compliant	-	-	-	PowerFlat™ (6x5)	-	-	- 55 C	-	-	MOSFET	-	60 W	-	SMD/SMT	N-Channel	55 A	0.0002	8.8 mOhm @ 7.5A, 10V	30 V	-	-	-	:No SVHC (20-Jun-2013)	85423300	:8	3000	-	-	497-7018-2	-	:10V	30V	55A (Tc)	-	-	-	-	-	-	:2.5V	:7.9mohm	:-	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Logic Level Gate	4W	2.5V @ 250µA	12nC @ 4.5V	965pF @ 25V	8.5 ns	32 ns	-	Single Quad Drain Triple Source	:30V	-	-	-	-	-	-	-	-	-	:SMD	-	+/- 16 V	-	-	-	18 ns	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 STB12NK80ZT4 MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH Trans MOSFET N-CH 800V 10.5A 3-Pin(2+Tab) D2PAK T/R MOSFET N-CH 800V 10.5A D2PAK MOSFET, N CH, 800V, 10.5A, D2PAK STMicroelectronics MDmesh, SuperMESH 系列 N沟道 Si MOSFET , 10.5 A, Vds=800 V, 3针 D2PAK封装 STMicroelectronics	799	1: ¥14.058	1,000	:190W	Tape and Reel	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Lead free / RoHS Compliant	3	Compliant	D2PAK	D2PAK	750@10V	Gull-wing	- 55 C	-	-	MOSFET	D2PAK	190 W	9.35(Max)	SMD/SMT	N-Channel	10.5 A	0.0002	750 mOhm @ 5.25A, 10V	800 V	10.4(Max)	-	2	:No SVHC (20-Jun-2013)	85423300	:3	1000	-	4.6(Max)	497-4320-2	-	:10V	800V	10.5A (Tc)	-	-	-	-	-	-	:3.75V	:650mohm	:MSL 1 - Unlimited	-	Tab	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	190W	4.5V @ 100µA	87nC @ 10V	2620pF @ 25V	20 ns	18 ns	-	Single	:800V	-	-	-	-	1	800	10.5	N	-	:SMD	12 S	+/- 30 V	-	-	:10.5A	70 ns	87 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 STL13NM60N MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II Trans MOSFET N-CH 600V 10A 4-Pin Power Flat T/R MOSFET N-CH 600V 10A POWERFLAT MOSFET, N CH, 600V, 10A, POWERFLAT STMicroelectronics N沟道 Si MOSFET , 10 A, Vds=650 V, 5针 PowerFLAT HV封装 STMicroelectronics	28	1: ¥36.897	3,000	:90W	Tape and Reel	Surface Mount	5-PowerVDFN	Lead free / RoHS Compliant	4	Compliant	Power Flat	5-PowerFlat™ HV (8x8)	385@10V	No Lead	- 55 C	-	-	MOSFET	-	90 W	-	SMD/SMT	N-Channel	10 A	0.03	385 mOhm @ 5A, 10V	600 V	-	-	-	:No SVHC (20-Jun-2013)	85412900	:5	-	-	-	497-11845-2	-	:10V	600V	10A (Tc)	-	-	-	-	-	-	:3V	:0.32ohm	:MSL 3 - 168 hours	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	90W	4V @ 250µA	30nC @ 10V	790pF @ 50V	-	-	-	Single	-	-	-	-	-	1	600	10	Enhancement	-	-	-	+/- 25 V	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 STB12NM50N MOSFET N-CHANNEL MOSFET Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R MOSFET N-CH 500V 11A D2PAK MOSFET, N, D2-PAK STMicroelectronics	179	1: ¥28.356	1,000	:100W	Tape and Reel	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	Lead free / RoHS Compliant	3	Compliant	D2PAK	D2PAK	:380mohm	Gull-wing	- 55 C	-	-	MOSFET	D2PAK	1000 W	9.35(Max)	SMD/SMT	N-Channel	11 A	0.0015	380 mOhm @ 5.5A, 10V	500 V	10.4(Max)	-	2	:No SVHC (20-Jun-2013)	85412900	:3	-	-	4.6(Max)	497-5781-1	:150°C	:10V	500V	11A (Tc)	-	-	-	-	-	-	:3V	:380mohm	:MSL 1 - Unlimited	-	Tab	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Standard	100W	4V @ 250µA	30nC @ 10V	940pF @ 50V	14 ns	15 ns	-	Single	:500V	-	-	-	-	1	500	11	N	-	:SMD	17 S	+/- 25 V	-	-	:11A	60 ns	-	:44A	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:350mJ	-	-	-	-	-	-	-	-	:5A	:15V/ns	:880pF	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 2N7002 MOSFET N-Ch 60 Volt 0.20 A 1.8 Ohm STripFET Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R Z MOSFET N-CH 60V 200MA SOT-23-3 Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R MOSFET, N, 0.2A, 60V, SOT-23 MOSFET,Power;N-Ch;VDSS60V;RDS(ON)1.8Ohms;ID0.2A;SOT-23-3L;PD0.35W;VGS+/-1 STMicroelectronics	10	1: ¥0.5236	3,000	:360mW	Tape and Reel	Surface Mount	TO-236-3, SC-59, SOT-23-3	Lead free / RoHS Compliant	3	Compliant	SOT-23	SOT-23-3	1.8Ohms	Gull-wing	:-55°C	18000	3000	-	SOT-23	-	:3.05mm	-	:N Channel	0.2A	0.002	5 Ohm @ 500mA, 10V	60V	-	-	-	:No SVHC (20-Jun-2013)	85412900	:3	-	1.2V	-	497-3111-2	+150°C	:10V	60V	115mA	-	-	-	-	-	-	:2.1V	:7.5ohm	:MSL 1 - Unlimited	-	-	-	-	-	-	-	MOSFET N-Channel, Metal Oxide	Logic Level Gate	350mW	3V @ 250µA	2nC @ 5V	43pF @ 25V	-	-	:1.12mm	-	:60V	-	-	-	-	1	60	0.2	Enhancement	-	-	-	-	-	-	:200mA	-	-	:800mA	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	:ST2N	-	-	-	-	-	-	-	-	-	-	-	-	5ns	7ns	0.6S	:2.5mm	N-Channel	:8mm	:72	:25°C	-	-	-	-	-	-
3 STE30NK90Z MOSFET N-Ch 900 Volt 30 Amp Zener SuperMESH Trans MOSFET N-CH 900V 28A 4-Pin ISOTOP Tube N-CH 900V 30A 300mOhm ISOTOP MOSFET N-CH 900V 28A ISOTOP STE30NK90Z, N-channel MOSFET Transistor 28A 900V, 4-Pin ISOTOP STE30NK90Z Series 900 V 0.26 Ohm N-Channel Zener-Protected SuperMESH?MOSFET STMicroelectronics	10	10: ¥150.465	10	500 W	Tube	THT	ISOTOP	Lead free / RoHS Compliant	4	Compliant	ISOTOP	ISOTOP®	0.26 Ω	-	+150 °C	10	10	-	ISOTOP	-	25.5mm	-	-	30A	-	0.3Ohm	-	-	-	-	-	-	-	-	-	-	497-4336-5	-	±30 V	900V	28A	-	-	-	RoHS-conform	STE30NK90Z	99 weeks	-	-	-	-	-	-	-	-	-	NO	MOSFET N-Channel, Metal Oxide	Standard	500W	4.5V @ 150µA	490nC	12000pF @ 25V	-	-	38.2mm	Single	-	-	-	-	-	1	900 V	28 A	Enhancement	ISOTOP	-	-	-	9.1mm	38.2 x 25.5 x 9.1mm	-	250 ns	-	-	-	-	-	Power MOSFET	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	NO	600W	900V	67 ns	SuperMESH	0.23K/W

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STMicroelectronics N.V.- DIACs - Trigger Diodes

DIACs - Trigger Diodes - 型号列表

On-State Resistance (Max)

Package / Case

Power Dissipation (Max)

Rds On (Max) @ Id, Vgs

Current - Drain (Idss) @ Vds (Vgs=0)

Other Names

Current - Continuous Drain (Id) @ 25degC

Power - Rated

Width

Supplier Device Package

Matchcode

Resistance - RDS(On)

Weight

Drain to Source Voltage (Vdss)

MOQ

Unit Pack

Current - Peak Output

Vce(on) (Max) @ Vge, Ic

Package Quantity

Power - Max

Input Capacitance (Ciss) (Max) @ Vds

Standard Package Name

Fall Time

Rise Time (Typ)

Current - Output (Typ)

Length

Contact Voltage (Max)

Gate Charge (Qg) (Max) @ Vgs

Current - Peak Pulse (10/1000us)

Standard Package

Factory Pack Quantity

Operating Temperature

Current - Trip (It)

Vgs(th) (Max) @ Id

Height

Packaging

Package Cooled

Length - Overall

Size / Dimension

Standard Leadtime

Voltage - Threshold

Rds On (Typ)

Current Rating (Max)

Delay to 1st Tap

Voltage - Breakdown

Voltage - Supply

Number of Positions

Shell Size - Insert

Tariff No

Voltage - Input (Min)

Number of Pins

Operating Temperature - Junction

Current Transfer Ratio (Min)

Voltage - Gate Trigger (Vgt) (Max)

Current - Output

Lead Style

Mounting Type

Printed Circuit Board

Current - Peak Pulse (8/20us)

Vgs (Max)

Material Finish

Gate Charge

Product Category

RoHS

EU RoHS

Transistor Type

Number of Outputs

Mounting Style

Type

Configuration

Voltage

SCR Type

Tolerance

Voltage - Max

Current - Breakover

LED Forward Current

Voltage - Breakover

Current - Leakage (IS(off)) (Max)