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Wolfspeed, Inc.

Wolfspeed, Inc.- Discrete IGBTs

Wolfspeed, Inc. is a leading American semiconductor company specializing in wide-bandgap silicon carbide (SiC) and gallium nitride (GaN) technologies. Originally founded in 1987 as Cree, Inc., the company pioneered SiC material development and commercialization. Headquartered in Durham, North Carolina, Wolfspeed rebranded from Cree's power and RF division in 2015 and became a pure-play wide-bandgap semiconductor company in 2021 after divesting its LED business. Its core business spans SiC substrates, epitaxy, power devices, and RF GaN-on-SiC solutions. The power portfolio includes industry-leading SiC MOSFETs (e.g., C3M series), Schottky diodes, power modules, and gate driver boards for electric vehicles, fast charging, renewable energy, and industrial drives. For RF applications, Wolfspeed offers high-performance GaN HEMTs and MMICs targeting 5G infrastructure, defense radar, and satellite communications. The company operates the world's largest and first 200mm SiC wafer fab in Marcy, New York, underscoring its manufacturing leadership. Wolfspeed is the largest global supplier of SiC wafers and holds a dominant technological position in the SiC power device market. Its vertical integration from substrate to device, combined with strategic partnerships with major automotive OEMs and tier-one suppliers, positions it as a critical enabler of the electric vehicle revolution and next-generation high-efficiency power systems.

03

Discrete IGBTs - 型号列表

64 parts in total

Current Transfer Ratio (Min)

Gate Charge

Power - Average Forward

Current - Continuous Drain (Id) @ 25degC

Fall Time

Rise Time (Typ)

Delay to 1st Tap

On-State Resistance (Max)

Switch Time (Ton, Toff) (Max)

Delay Time - ON

Power Dissipation (Max)

Delay Time - OFF

Resistance - Input

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Vgs (Max)

Vce(on) (Max) @ Vge, Ic

Voltage - Supply

Height

Package / Case

Size / Dimension

Factory Pack Quantity

Transistor Type

Width

Packaging

Number of Pins

Package Quantity

Operating Temperature

RoHS

Length

Mounting Type

Mounting Style

Type

Channel Type

Configuration

Standard Package

Gain

Power - Output

Current - Output

Current Rating (Max)

Mfr Part #Quantity AvailablePriceRoHSTransistor TypePackagingPackage / CaseFactory Pack QuantityFall TimeGate ChargeRise Time (Typ)Delay to 1st TapNumber of ChannelsVgs(th) (Max) @ IdVce(on) (Max) @ Vge, IcOn-State Resistance (Max)Current Transfer Ratio (Min)Current - Continuous Drain (Id) @ 25degCMounting StyleTechnologyChannel TypeManufacturerOperating TemperaturePower - Average ForwardConfigurationVgs (Max)Switch Time (Ton, Toff) (Max)ProductDelay Time - ONOutput FunctionDelay Time - OFFVoltage - SupplyNumber of ElementsResistance - InputPower Dissipation (Max)Gate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsWidthHeightLengthMounting TypeNumber of PinsPackage QuantitySize / DimensionTypeCard StandardFunctionStandard PackageGainFrequencyPower - OutputVoltage - TestVoltage RatingCurrent - OutputCurrent Rating (Max)TradenameSeriesSupplier Device Package
C2M0040120D
3
C2M0040120D

Wolfspeed , N沟道 MOSFET, 60 A, Vds=1200 V, 3针 TO-247封装 MOSFET SiC Power MOSFET 1200V, 60A

WOLFSPEED

10551: ¥232.016RoHS CompliantSiCTubeTO-247-33034.4 ns283 nC52 ns26.4 ns1 Channel2V1200 V40 mOhms15.1s60 AThrough HoleSiCNWolfspeed / Cree+150 °C330 WSingle- 10 V, + 25 V14.8 nsPower MOSFET15 ns增强26 ns3.3V10.052 Ω330 W-5 V,20 V1893 pF @ 1000 V5.21mm21.1mm16.13mm通孔3TO-24716.13 x 5.21 x 21.1mmSilicon Carbide Power MOSFET功率 MOSFET------------
CMF20120D
3
CMF20120D

Wolfspeed , N沟道 MOSFET, 42 A, Vds=1200 V, 3针 TO-247封装 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT

WOLFSPEED

691: ¥226.644RoHS CompliantSiC-TO-247-33024 ns90.8 nC38 ns40 ns1 Channel4.8V1200 V80 mOhms7.9s42 AThrough HoleSiCNWolfspeed / Cree+135 °C150 WSingle25 V13 ns-13 ns增强40 ns3.5V10.12 Ω215 W-5/+20 V1915 pF @ 800 V5.21mm21.1mm16.13mm通孔3TO-24716.13 x 5.21 x 21.1mm-功率 MOSFETY-----------
C2M0025120D
2
C2M0025120D

Wolfspeed , N沟道 MOSFET, 90 A, Vds=1200 V, 3针 TO-247封装 MOSFET SIC MOSFET 1200V RDS ON 25 mOhm

WOLFSPEED

9161: ¥474.64RoHS CompliantSiCTubeTO-247-33028.4 ns406 nC31.6 ns28.8 ns1 Channel2V1200 V25 mOhms23.6s90 AThrough HoleSiCNWolfspeed / Cree+150 °C463 WSingle- 10 V, + 25 V14.4 nsPower MOSFET14 ns增强29 ns3.3V10.034 Ω463 W25 V2788 pF @ 1000 V21.1mm5.21mm16.13mm通孔3TO-24716.13 x 21.1 x 5.21mmSilicon Carbide Power MOSFET功率 MOSFET------------
C2M1000170J
2
C2M1000170J

Wolfspeed , N沟道 MOSFET, 5.3 A, Vds=1700 V, 7针 D2PAK封装 Wolfspeed SiC N沟道 MOSFET , 5.3 A, Vds=1700 V, 7针 D2PAK封装 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm

Wolfspeed

21571: ¥38.012RoHS CompliantSiCTubeTO-263-75040.4 ns13 nC4.8 ns10.8 ns1 Channel4V1700 V1 Ohm0.82S5.3 ASMD/SMTSiCNWolfspeed / Cree+150 °C---4 ns-4 ns增强10.8 ns3.8V11.4 Ω78 W-10 V,25 V200 pF @ 1000 V10.99mm4.57mm10.23mm表面贴装7D2PAK10.23 x 10.99 x 4.57mm-功率 MOSFETY-----------
C3M0065090J
2
C3M0065090J

Wolfspeed , N沟道 MOSFET, 35 A, Vds=900 V, 7针 D2PAK封装 MOSFET G3 SiC MOSFET 900V, 65mOhm

Wolfspeed

130751: ¥70.108RoHS CompliantSiCTubeTO-263-7505 ns30 nC6.5 ns15 ns1 Channel2.1V900 V90 mOhms13.6s35 ASMD/SMTSiCNWolfspeed / Cree+150 °C113 WSingle- 8 V, + 18 V7.2 nsPower MOSFET7.2 ns增强15 ns4.4V10.078 Ω113 W25 V660 pF @ 600 V10.99mm4.57mm10.23mm表面贴装7D2PAK10.23 x 10.99 x 4.57mmSilicon Carbide MOSFET功率 MOSFETY-----------
C2M0280120D
2
C2M0280120D

Wolfspeed , N沟道 MOSFET, 10 A, Vds=1200 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 10 A, Vds=1200 V, 3针 TO-247封装 MOSFET SIC MOSFET 1200V RDS ON 280 mOhm

Wolfspeed

801: ¥91.80RoHS CompliantSiCTubeTO-247-3309.9 ns5.6 nC7.6 ns10.8 ns1 Channel4V1200 V280 mOhms2.8S10 AThrough HoleSiCNWolfspeed / Cree+150 °C62.5 WSingle- 10 V to + 25 V5.2 ns-5.2 ns增强10.8 ns3.3V10.37 Ω62.5 W25 V259 pF @ 1000 V21.1mm5.21mm16.13mm通孔3TO-24716.13 x 21.1 x 5.21mm-功率 MOSFETY--------Z-FET--
C3M0120090D
2
C3M0120090D

Wolfspeed , N沟道 MOSFET, 23 A, Vds=900 V, 3针 TO-247封装 Wolfspeed SiC N沟道 MOSFET , 23 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 120mOhm

Wolfspeed

210030: ¥43.06RoHS CompliantSiCTubeTO-247-3308 ns17.3 nC10 ns25 ns1 Channel3.5V900 V120 mOhms7.7S23 AThrough HoleSiCNWolfspeed / Cree+150 °C97 WSingle-27 nsPower MOSFET27 ns增强25 ns4.8V10.155 Ω97 W-8 V,18 V350 pF @ 600 V21.1mm5.21mm16.13mm通孔3TO-24716.13 x 21.1 x 5.21mmSilicon Carbide MOSFET功率 MOSFETY-----------
C3M0065090D
2
C3M0065090D

Wolfspeed , N沟道 MOSFET, 36 A, Vds=900 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 36 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 65mOhm

Wolfspeed

101: ¥127.5855RoHS CompliantSiCTubeTO-247-33025 ns30.4 nC36 ns28 ns1 Channel2.1V900 V90 mOhms13.6S36 AThrough HoleSiCNWolfspeed / Cree+150 °C125 WSingle- 8 V, + 18 V21 nsPower MOSFET21 ns增强28 ns4.8V10.078 Ω125 W18 V660 pF @ 600 V21.1mm5.21mm16.13mm通孔3TO-24716.13 x 21.1 x 5.21mmSilicon Carbide MOSFET功率 MOSFETY-----------
C3M0065100K
2
C3M0065100K

Wolfspeed , N沟道 MOSFET, 35 A, Vds=1000 V, 4针 TO-247-4封装 Wolfspeed C3M 系列 SiC N沟道 MOSFET , 35 A, Vds=1000 V, 4针 TO-247-4封装 MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4

Wolfspeed

22931: ¥82.688RoHS CompliantSiCTubeTO-247-4308 ns35 nC10 ns19 ns1 Channel3.5V1000 V65 mOhms14.3S35 AThrough HoleSiCNWolfspeed / Cree+150 °C113.5 W1 N-Channel- 4 V, + 15 V--20 ns增强19 ns4.8V190 mΩ113.5 W-4/+15(静态)V,-8/+19(动态)V660 pF @ 600 V5.21mm23.6mm16.13mm通孔4TO-247-416.13 x 5.21 x 23.6mm-功率 MOSFETY---------C3M-
C3M0280090D
2
C3M0280090D

Wolfspeed N沟道 SiC MOSFET , 11.5 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 280mOhm

Wolfspeed

12911: ¥23.596RoHS CompliantSiCTubeTO-247-3307.5 ns9.5 nC10 ns17.5 ns1 Channel3.5V900 V280 mOhms3.6s11.5 AThrough HoleSiCNWolfspeed / Cree+150 °C54 WSingle-26 nsPower MOSFET26 ns增强17.5 ns4.8V10.36 Ω54 W-8 V,18 V150 pF @ 600 V21.1mm5.21mm16.13mm通孔3TO-24716.13 x 21.1 x 5.21mmSilicon Carbide MOSFET功率 MOSFETY-----------
C2M0045170D
C2M0045170D

MOSFET SiC Power MOSFET 1700V, 72A

Wolfspeed, Inc.

7991: ¥592.96RoHS CompliantN-ChannelTubeTO-247-33018 ns188 nC20 ns48 ns1 Channel2 V1700 V45 mOhms21.7 S72 AThrough HoleSiCEnhancementWolfspeed / Cree+ 150 C520 W1 N-Channel- 5 V, + 20 V--------------------------------
C3M0120100K
C3M0120100K

MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4

Wolfspeed, Inc.

5611: ¥59.50RoHS CompliantN-ChannelTubeTO-247-4308 ns21.5 nC15 ns19 ns1 Channel1.8 V1 kV120 mOhms7.7 S22 AThrough HoleSiCEnhancementWolfspeed / Cree+ 150 C83 W1 N-Channel- 4 V, + 15 V--------------------------------
C3M0120090J-TR
C3M0120090J-TR

MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm

Wolfspeed, Inc.

101: ¥79.1805RoHS CompliantN-ChannelReelTO-263-78005 ns17.3 nC9 ns15 ns1 Channel1.8 V900 V170 mOhms6.7 S22 ASMD/SMTSiCEnhancementWolfspeed / Cree+ 150 C83 WSingle- 8 V, + 18 V12.5 nsPower MOSFET----------------Silicon Carbide MOSFET-------------
C3M0120090J
C3M0120090J

MOSFET G3 SiC MOSFET 900V, 120 mOhm

Wolfspeed, Inc.

4421: ¥44.948RoHS CompliantN-ChannelTubeTO-263-7505 ns17.3 nC9 ns15 ns1 Channel1.8 V900 V170 mOhms6.7 S22 ASMD/SMTSiCEnhancementWolfspeed / Cree+ 150 C83 WSingle- 8 V, + 18 V12.5 nsPower MOSFET----------------Silicon Carbide MOSFET-------------
C3M0280090J
C3M0280090J

MOSFET G3 SiC MOSFET 900V, 280 mOhm

Wolfspeed, Inc.

13861: ¥24.82RoHS CompliantN-ChannelTubeTO-263-7504 ns9.5 nC6.5 ns11 ns1 Channel1.8 V900 V385 mOhms3.1 S11 ASMD/SMTSiCEnhancementWolfspeed / Cree+ 150 C50 WSingle- 8 V, + 18 V10.5 nsPower MOSFET----------------Silicon Carbide MOSFET-------------
C3M0280090J-TR
C3M0280090J-TR

MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm

Wolfspeed, Inc.

14961: ¥24.82RoHS CompliantN-ChannelReelTO-263-78004 ns9.5 nC6.5 ns11 ns1 Channel1.8 V900 V385 mOhms3.1 S11 ASMD/SMTSiCEnhancementWolfspeed / Cree+ 150 C50 WSingle- 8 V, + 18 V10.5 nsPower MOSFET----------------Silicon Carbide MOSFET-------------
C3M0075120K
C3M0075120K

MOSFET SIC MOSFET 1200V 75 mOhm

Wolfspeed, Inc.

10811: ¥66.572RoHS CompliantN-ChannelTubeTO-247-43011 ns51 nC11 ns33 ns1 Channel1.7 V1.2 kV75 mOhms8.3 S30 AThrough HoleSiCEnhancementWolfspeed / Cree+ 150 C119 W1 N-Channel- 4 V, + 15 V--------------------------------
CGHV22100-TB
CGHV22100-TB

MOSF RF 125V 6A 2.2GHZ 440162

Wolfspeed, Inc.

-Lead free / RoHS CompliantHEMTBulk-----------------------------------------220dB1.8GHz ~ 2.2GHz100W50V125V500mA6A---
CGHV22100F
CGHV22100F

MOSF RF 125V 6A 2.2GHZ 440162

Wolfspeed, Inc.

-Lead free / RoHS CompliantHEMTTube440162----------------------------------------10020dB1.8GHz ~ 2.2GHz100W50V125V500mA6A--440162
CGHV22200-TB
CGHV22200-TB

MOSF RF 125V 12A 2.2GHZ 440162

Wolfspeed, Inc.

-Lead free / RoHS CompliantHEMTBulk-----------------------------------------218dB1.8GHz ~ 2.2GHz200W50V125V1A12A---
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