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Discrete IGBTs

Wolfspeed, Inc.- Discrete IGBTs
Discrete IGBTs - 型号列表
64 parts in total| Mfr Part # | Quantity Available | Price | RoHS | Transistor Type | Packaging | Package / Case | Factory Pack Quantity | Fall Time | Gate Charge | Rise Time (Typ) | Delay to 1st Tap | Number of Channels | Vgs(th) (Max) @ Id | Vce(on) (Max) @ Vge, Ic | On-State Resistance (Max) | Current Transfer Ratio (Min) | Current - Continuous Drain (Id) @ 25degC | Mounting Style | Technology | Channel Type | Manufacturer | Operating Temperature | Power - Average Forward | Configuration | Vgs (Max) | Switch Time (Ton, Toff) (Max) | Product | Delay Time - ON | Output Function | Delay Time - OFF | Voltage - Supply | Number of Elements | Resistance - Input | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Width | Height | Length | Mounting Type | Number of Pins | Package Quantity | Size / Dimension | Type | Card Standard | Function | Standard Package | Gain | Frequency | Power - Output | Voltage - Test | Voltage Rating | Current - Output | Current Rating (Max) | Tradename | Series | Supplier Device Package |
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C2M0040120D Wolfspeed , N沟道 MOSFET, 60 A, Vds=1200 V, 3针 TO-247封装 MOSFET SiC Power MOSFET 1200V, 60A WOLFSPEED | 1055 | 1: ¥232.016 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 34.4 ns | 283 nC | 52 ns | 26.4 ns | 1 Channel | 2V | 1200 V | 40 mOhms | 15.1s | 60 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 330 W | Single | - 10 V, + 25 V | 14.8 ns | Power MOSFET | 15 ns | 增强 | 26 ns | 3.3V | 1 | 0.052 Ω | 330 W | -5 V,20 V | 1893 pF @ 1000 V | 5.21mm | 21.1mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 5.21 x 21.1mm | Silicon Carbide Power MOSFET | 功率 MOSFET | - | - | - | - | - | - | - | - | - | - | - | - |
CMF20120D Wolfspeed , N沟道 MOSFET, 42 A, Vds=1200 V, 3针 TO-247封装 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT WOLFSPEED | 69 | 1: ¥226.644 | RoHS Compliant | SiC | - | TO-247-3 | 30 | 24 ns | 90.8 nC | 38 ns | 40 ns | 1 Channel | 4.8V | 1200 V | 80 mOhms | 7.9s | 42 A | Through Hole | SiC | N | Wolfspeed / Cree | +135 °C | 150 W | Single | 25 V | 13 ns | - | 13 ns | 增强 | 40 ns | 3.5V | 1 | 0.12 Ω | 215 W | -5/+20 V | 1915 pF @ 800 V | 5.21mm | 21.1mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 5.21 x 21.1mm | - | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
C2M0025120D Wolfspeed , N沟道 MOSFET, 90 A, Vds=1200 V, 3针 TO-247封装 MOSFET SIC MOSFET 1200V RDS ON 25 mOhm WOLFSPEED | 916 | 1: ¥474.64 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 28.4 ns | 406 nC | 31.6 ns | 28.8 ns | 1 Channel | 2V | 1200 V | 25 mOhms | 23.6s | 90 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 463 W | Single | - 10 V, + 25 V | 14.4 ns | Power MOSFET | 14 ns | 增强 | 29 ns | 3.3V | 1 | 0.034 Ω | 463 W | 25 V | 2788 pF @ 1000 V | 21.1mm | 5.21mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 21.1 x 5.21mm | Silicon Carbide Power MOSFET | 功率 MOSFET | - | - | - | - | - | - | - | - | - | - | - | - |
C2M1000170J Wolfspeed , N沟道 MOSFET, 5.3 A, Vds=1700 V, 7针 D2PAK封装 Wolfspeed SiC N沟道 MOSFET , 5.3 A, Vds=1700 V, 7针 D2PAK封装 MOSFET SIC MOSFET 1700V RDS ON 1 Ohm Wolfspeed | 2157 | 1: ¥38.012 | RoHS Compliant | SiC | Tube | TO-263-7 | 50 | 40.4 ns | 13 nC | 4.8 ns | 10.8 ns | 1 Channel | 4V | 1700 V | 1 Ohm | 0.82S | 5.3 A | SMD/SMT | SiC | N | Wolfspeed / Cree | +150 °C | - | - | - | 4 ns | - | 4 ns | 增强 | 10.8 ns | 3.8V | 1 | 1.4 Ω | 78 W | -10 V,25 V | 200 pF @ 1000 V | 10.99mm | 4.57mm | 10.23mm | 表面贴装 | 7 | D2PAK | 10.23 x 10.99 x 4.57mm | - | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
C3M0065090J Wolfspeed , N沟道 MOSFET, 35 A, Vds=900 V, 7针 D2PAK封装 MOSFET G3 SiC MOSFET 900V, 65mOhm Wolfspeed | 13075 | 1: ¥70.108 | RoHS Compliant | SiC | Tube | TO-263-7 | 50 | 5 ns | 30 nC | 6.5 ns | 15 ns | 1 Channel | 2.1V | 900 V | 90 mOhms | 13.6s | 35 A | SMD/SMT | SiC | N | Wolfspeed / Cree | +150 °C | 113 W | Single | - 8 V, + 18 V | 7.2 ns | Power MOSFET | 7.2 ns | 增强 | 15 ns | 4.4V | 1 | 0.078 Ω | 113 W | 25 V | 660 pF @ 600 V | 10.99mm | 4.57mm | 10.23mm | 表面贴装 | 7 | D2PAK | 10.23 x 10.99 x 4.57mm | Silicon Carbide MOSFET | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
C2M0280120D Wolfspeed , N沟道 MOSFET, 10 A, Vds=1200 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 10 A, Vds=1200 V, 3针 TO-247封装 MOSFET SIC MOSFET 1200V RDS ON 280 mOhm Wolfspeed | 80 | 1: ¥91.80 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 9.9 ns | 5.6 nC | 7.6 ns | 10.8 ns | 1 Channel | 4V | 1200 V | 280 mOhms | 2.8S | 10 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 62.5 W | Single | - 10 V to + 25 V | 5.2 ns | - | 5.2 ns | 增强 | 10.8 ns | 3.3V | 1 | 0.37 Ω | 62.5 W | 25 V | 259 pF @ 1000 V | 21.1mm | 5.21mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 21.1 x 5.21mm | - | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | Z-FET | - | - |
C3M0120090D Wolfspeed , N沟道 MOSFET, 23 A, Vds=900 V, 3针 TO-247封装 Wolfspeed SiC N沟道 MOSFET , 23 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 120mOhm Wolfspeed | 2100 | 30: ¥43.06 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 8 ns | 17.3 nC | 10 ns | 25 ns | 1 Channel | 3.5V | 900 V | 120 mOhms | 7.7S | 23 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 97 W | Single | - | 27 ns | Power MOSFET | 27 ns | 增强 | 25 ns | 4.8V | 1 | 0.155 Ω | 97 W | -8 V,18 V | 350 pF @ 600 V | 21.1mm | 5.21mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 21.1 x 5.21mm | Silicon Carbide MOSFET | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
C3M0065090D Wolfspeed , N沟道 MOSFET, 36 A, Vds=900 V, 3针 TO-247封装 Wolfspeed N沟道 SiC MOSFET , 36 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 65mOhm Wolfspeed | 10 | 1: ¥127.5855 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 25 ns | 30.4 nC | 36 ns | 28 ns | 1 Channel | 2.1V | 900 V | 90 mOhms | 13.6S | 36 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 125 W | Single | - 8 V, + 18 V | 21 ns | Power MOSFET | 21 ns | 增强 | 28 ns | 4.8V | 1 | 0.078 Ω | 125 W | 18 V | 660 pF @ 600 V | 21.1mm | 5.21mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 21.1 x 5.21mm | Silicon Carbide MOSFET | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
C3M0065100K Wolfspeed , N沟道 MOSFET, 35 A, Vds=1000 V, 4针 TO-247-4封装 Wolfspeed C3M 系列 SiC N沟道 MOSFET , 35 A, Vds=1000 V, 4针 TO-247-4封装 MOSFET 1000V 65 mOhm G3 SiC MOSFET TO-247-4 Wolfspeed | 2293 | 1: ¥82.688 | RoHS Compliant | SiC | Tube | TO-247-4 | 30 | 8 ns | 35 nC | 10 ns | 19 ns | 1 Channel | 3.5V | 1000 V | 65 mOhms | 14.3S | 35 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 113.5 W | 1 N-Channel | - 4 V, + 15 V | - | - | 20 ns | 增强 | 19 ns | 4.8V | 1 | 90 mΩ | 113.5 W | -4/+15(静态)V,-8/+19(动态)V | 660 pF @ 600 V | 5.21mm | 23.6mm | 16.13mm | 通孔 | 4 | TO-247-4 | 16.13 x 5.21 x 23.6mm | - | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | C3M | - |
C3M0280090D Wolfspeed N沟道 SiC MOSFET , 11.5 A, Vds=900 V, 3针 TO-247封装 MOSFET G3 SiC MOSFET 900V, 280mOhm Wolfspeed | 1291 | 1: ¥23.596 | RoHS Compliant | SiC | Tube | TO-247-3 | 30 | 7.5 ns | 9.5 nC | 10 ns | 17.5 ns | 1 Channel | 3.5V | 900 V | 280 mOhms | 3.6s | 11.5 A | Through Hole | SiC | N | Wolfspeed / Cree | +150 °C | 54 W | Single | - | 26 ns | Power MOSFET | 26 ns | 增强 | 17.5 ns | 4.8V | 1 | 0.36 Ω | 54 W | -8 V,18 V | 150 pF @ 600 V | 21.1mm | 5.21mm | 16.13mm | 通孔 | 3 | TO-247 | 16.13 x 21.1 x 5.21mm | Silicon Carbide MOSFET | 功率 MOSFET | Y | - | - | - | - | - | - | - | - | - | - | - |
| 799 | 1: ¥592.96 | RoHS Compliant | N-Channel | Tube | TO-247-3 | 30 | 18 ns | 188 nC | 20 ns | 48 ns | 1 Channel | 2 V | 1700 V | 45 mOhms | 21.7 S | 72 A | Through Hole | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 520 W | 1 N-Channel | - 5 V, + 20 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 561 | 1: ¥59.50 | RoHS Compliant | N-Channel | Tube | TO-247-4 | 30 | 8 ns | 21.5 nC | 15 ns | 19 ns | 1 Channel | 1.8 V | 1 kV | 120 mOhms | 7.7 S | 22 A | Through Hole | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 83 W | 1 N-Channel | - 4 V, + 15 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 10 | 1: ¥79.1805 | RoHS Compliant | N-Channel | Reel | TO-263-7 | 800 | 5 ns | 17.3 nC | 9 ns | 15 ns | 1 Channel | 1.8 V | 900 V | 170 mOhms | 6.7 S | 22 A | SMD/SMT | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 83 W | Single | - 8 V, + 18 V | 12.5 ns | Power MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 442 | 1: ¥44.948 | RoHS Compliant | N-Channel | Tube | TO-263-7 | 50 | 5 ns | 17.3 nC | 9 ns | 15 ns | 1 Channel | 1.8 V | 900 V | 170 mOhms | 6.7 S | 22 A | SMD/SMT | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 83 W | Single | - 8 V, + 18 V | 12.5 ns | Power MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 1386 | 1: ¥24.82 | RoHS Compliant | N-Channel | Tube | TO-263-7 | 50 | 4 ns | 9.5 nC | 6.5 ns | 11 ns | 1 Channel | 1.8 V | 900 V | 385 mOhms | 3.1 S | 11 A | SMD/SMT | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 50 W | Single | - 8 V, + 18 V | 10.5 ns | Power MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 1496 | 1: ¥24.82 | RoHS Compliant | N-Channel | Reel | TO-263-7 | 800 | 4 ns | 9.5 nC | 6.5 ns | 11 ns | 1 Channel | 1.8 V | 900 V | 385 mOhms | 3.1 S | 11 A | SMD/SMT | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 50 W | Single | - 8 V, + 18 V | 10.5 ns | Power MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | Silicon Carbide MOSFET | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| 1081 | 1: ¥66.572 | RoHS Compliant | N-Channel | Tube | TO-247-4 | 30 | 11 ns | 51 nC | 11 ns | 33 ns | 1 Channel | 1.7 V | 1.2 kV | 75 mOhms | 8.3 S | 30 A | Through Hole | SiC | Enhancement | Wolfspeed / Cree | + 150 C | 119 W | 1 N-Channel | - 4 V, + 15 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| - | Lead free / RoHS Compliant | HEMT | Bulk | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | 20dB | 1.8GHz ~ 2.2GHz | 100W | 50V | 125V | 500mA | 6A | - | - | - | ||
| - | Lead free / RoHS Compliant | HEMT | Tube | 440162 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 100 | 20dB | 1.8GHz ~ 2.2GHz | 100W | 50V | 125V | 500mA | 6A | - | - | 440162 | ||
| - | Lead free / RoHS Compliant | HEMT | Bulk | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2 | 18dB | 1.8GHz ~ 2.2GHz | 200W | 50V | 125V | 1A | 12A | - | - | - |

