Texas Instruments Incorporated- IGBTs

Texas Instruments Incorporated (TI) was originally founded in 1930 as Geophysical Service Incorporated and renamed in 1951, evolving into a global semiconductor design and manufacturing company. Headquartered in Dallas, Texas, USA, TI focuses on analog and embedded processing semiconductors. The company's product portfolio includes a vast array of analog chips such as amplifiers, data converters, power management ICs, and interface products. In embedded processing, TI offers highly popular microcontroller families like the ultra-low-power MSP430 series, real-time control C2000 series, and ARM-based Sitara and Tiva microcontroller series. TI also designs digital signal processors (DSPs) and application processors, notably the AM series for industrial and automotive applications. Beyond standard semiconductors, the company provides DLP (Digital Light Processing) technology for projection and advanced sensing solutions. TI is widely recognized as a market leader in analog semiconductors, holding approximately 19% of the global analog market share, the largest in the industry. The company consistently ranks among the top 10 semiconductor manufacturers worldwide and operates design, manufacturing, and sales facilities in over 30 countries.

IGBTs - 型号列表

346 parts in total

Mfr Part #	Quantity Available	Price	Standard Package	RoHS	FET Type	Vgs (Max)	FET Feature	Power - Max	Transistor Type	Number of Elements	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vce(on) (Max) @ Vge, Ic	On-State Resistance (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25degC	Packaging	Mounting Type	Package / Case	Number of Positions	Supplier Device Package	Channel Type	Configuration	Operating Temperature	EU RoHS	Fall Time (Typ)	Delay to 1st Tap	Voltage - Breakdown	Power Dissipation (Max)	Propagation Delay (Max)	Switch Time (Ton, Toff) (Max)	Current - Peak Pulse (10/1000us)	Width	Weight	Length - Overall	Package Quantity	Shell Size - Insert	Printed Circuit Board	Other Names	Power - Rated	Current - Drain (Idss) @ Vds (Vgs=0)	Part Status	Input Capacitance (Ciss) (Max) @ Vds	Software	Utilized IC / Part	Temperature - Test	Factory Pack Quantity	Fall Time	Rise Time (Typ)	Mounting Style	Type	Tariff No	Voltage - Threshold	Current Rating (Max)	Resistance - RDS(On)	Current - Peak Pulse (8/20us)	Other Specifications	Product Category	Rad Hardened	Package Cooled	Series	Pattern Number	Standard Package Name	Logic Voltage - VIL, VIH	Voltage - Gate Trigger (Vgt) (Max)	Polarity	Number of Pins	SVHC	Material Finish	Noise Figure	Power - Output	Frequency - Max	Current Drain (Id) - Max	Vce Saturation (Max) @ Ib, Ic	Lead Style	Tradename	DELETED	Contact Voltage (Max)	Termination	Functional Diagram	Height	Length	Number of Channels	Power - Average Forward	Technology	Manufacturer	Current Transfer Ratio (Min)	Product	DC Resistance (DCR) - Primary	Gate Charge	Size / Dimension	Current	Power Level	Delay Time - ON	Output Function	Delay Time - OFF	Voltage - Supply	Resistance - Input	Function	Development Kit	Operating Temperature - Junction	Card Standard	Base Unit	Mechanical Life
5 CSD17303Q5 Trans MOSFET N-CH 30V 32A 8-Pin SON T/R MOSFET N-CH 30V 100A 8SON MOSFET Transistor 30V N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 100 A, Vds=30 V, 8针 SON封装 MOSFET 30V N Channel NexFET Power MOSFET texas instruments	1029	1: ¥11.56	Cut Tape, Tape & Reel	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	10 V	Standard	3.2W	:N, :N Channel	1	1.6V @ 250µA	2.4@8V mOhm	30	2.4@8V	23nC @ 4.5V	30V	32A (Ta), 100A (Tc)	Tape and Reel	Surface Mount	8SON	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	10.4 ns	27 ns	30 V	:3.2W	16 ns	11.4 ns	32 A	6.1(Max)	0	5.1(Max)	SON	1.05(Max)	8	296-27232-2	-	-	ACTIVE	3420pF @ 15V	SLPS246B	View	-55 to 150	-	-	-	-	-	85412900	:1.1V	Catalog	:2mohm	200	4	-	-	-	-	-	SON	Yes	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 CSD17309Q3 Trans MOSFET N-CH 30V 20A 8-Pin SON T/R MOSFET N-CH 30V 60A 8SON MOSFET 30V N Channel NexFET Power MOSFET N CHANNEL, MOSFET, 30V, 60A, SON 30V N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 60 A, Vds=30 V, 8针 SON封装 texas instruments	164	1: ¥5.565	Cut Tape, Tape & Reel	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	2.8W	N-Channel	1	1.7V @ 250µA	5.4@8V mOhm	30 V	5.4@8V	10nC @ 4.5V	30V	20A (Ta), 60A (Tc)	Tape and Reel	Surface Mount	8SON	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	3.6 ns	13.2 ns	30 V	2800	9.9 ns	6.1 ns	20 A	3.3	0	3.3	SON	1	8	296-27250-2	2.8 W	20 A	ACTIVE	1440pF @ 15V	SLPS261B	View	-55 to 150	2500	3.6 ns	9.9 ns	SMD/SMT	Power MOSFET	85412900	:1.2V	Catalog	:4.9mohm	112	1.7	MOSFET	No	SON	CSD17309Q3	Y	SON	Yes	- 8 V, + 10 V	N	-	-	-	Not Required dB	Not Required dB	Not Required MHz	20 A	Not Required %	-	NexFET	Compliant	-	-	fbd_slps261b.gif	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 CSD86350Q5D Synchronous Buck NexFET Power Block 8-Pin SON T/R MOSFET N-CH 25V 40A 8SON Synchronous Buck NexFET™ Power Block MOSFET Pair Texas Instruments 双 N沟道 Si MOSFET 模块 , 120 A, Vds=25 V, 8针 SON封装 MOSFET Synch Buck NexFET Pwr Block MOSFET texas instruments	496	4: ¥17.34	Cut Tape, Tape & Reel	Contains lead / RoHS non-compliant	2 N-Channel (Half Bridge)	10	Logic Level Gate	13W	Si	2	2.1V @ 250µA	6 mOhm @ 20A, 8V	25	5 mOhms, 1.1 mOhms	10.7nC @ 4.5V	25V	40A	Tape and Reel	Surface Mount	8SON	8	8-SON (5x6)	N	PowerBlock	N/A to 125 °C	Compliant	-	-	-	13 W	-	-	-	5.1mm	-	5.1(Max)	SON	1.05(Max)	8	296-27532-2	-	-	ACTIVE	1870pF @ 12.5V	SLPS223E	View	-55 to 150	2500	21 ns	23 ns	SMD/SMT	Synchronous Buck MOSFET Driver	-	-	-	-	-	-	-	No	SON	NexFET™	Y	SON	-	-	-	8	-	-	-	-	-	-	-	-	NexFET	Compliant	-	-	alt_slps223e.gif	1.5mm	6.1mm	2 Channel	13 W	Si	Texas Instruments	-	-	-	-	6.1 x 5.1 x 1.5mm	25	2.8	8 ns，9 ns	增强	9 ns, 24 ns	25 V	1.1 mΩ，5 mΩ	Y	CSD86350Q5DEVM-604	125C	-	-	-
5 TPS1100D Trans MOSFET P-CH 15V 1.6A 8-Pin SOIC Tube MOSFET MOSFET 10ns RT MOSFET P-CH 15V 1.6A 8-SOIC texas instruments	710	1: ¥12.444	Rail / Tube	RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	791mW	P-Channel	1	1.5V @ 250µA	400@4.5V mOhm	- 15 V	0.4 ohm	5.45nC @ 10V	15V	1.6A (Ta)	Tube	Surface Mount	8SOIC	8	8-SOIC	P	Single Quad Drain Triple Source	-40 to 125 °C	Compliant	2 ns	13 ns	15 V	791	10 ns	4.5 ns	1.6 A	4(Max)	0.002677 oz	5(Max)	SOIC	1.5(Max)	8	296-3379-5	0.791 W	+/- 1.6 A	-	-	-	-	-	75	10 ns	10 ns	SMD/SMT	Small Signal	-	-	-	-	-	-	MOSFET	No	SOIC	TPS1100	-	SOIC	-	- 15 V	P	-	-	-	Not Required dB	Not Required dB	Not Required MHz	1.6 A	Not Required %	Gull-wing	-	-	-	-	-	1.75 mm	4.9 mm	1 Channel	0.791 W	Si	Texas Instruments	2.5 S	MOSFET Small Signal	2.5 S	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TPS1101DRG4 Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC T/R MOSFET P-CH 15V 2.3A 8-SOIC MOSFET Single P-Ch Enh-Mode MOSFET texas instruments	10	2500: ¥5.7392	Tape & Reel	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	791mW	P-Channel	1	1.5V @ 250µA	90(Typ)@10V mOhm	15 V	0.09 ohm	11.25nC @ 10V	15V	2.3A (Ta)	Tape & Reel (TR)	Surface Mount	8SOIC	8	8-SOIC	P	Single Quad Drain Triple Source	-40 to 125 °C	-	13 ns	19 ns	15 V	-	5.5 ns	6.5 ns	2.3 A	-	0.002677 oz	-	-	-	-	-	791 mW	2.3 A	-	-	-	-	-	2500	5.5 ns	5.5 ns	SMD/SMT	Small Signal	-	-	-	-	-	-	MOSFET	No	SOIC	TPS1101	-	-	-	- 15 V, 2 V	P	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPS1101PWR Trans MOSFET P-CH 15V 2.18A 16-Pin TSSOP T/R MOSFET P-CH 15V 2.18A 16-TSSOP MOSFET Single P-Ch Enh-Mode MOSFET texas instruments	1272	1: ¥16.524	Tape & Reel	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	710mW	P-Channel	1	1.5V @ 250µA	90(Typ)@10V mOhm	15 V	90 mOhms	11.25nC @ 10V	15V	2.18A (Ta)	Tape and Reel	Surface Mount	16TSSOP	16	16-TSSOP	P	Single Hex Drain Quint Source	-40 to 125 °C	Compliant	13 ns	19 ns	15 V	710	5.5 ns	6.5 ns	2.18 A	4.5(Max)	0.002183 oz	5.1(Max)	TSSOP	1.05(Max)	16	296-13384-2	710 mW	2.18 A	-	-	-	-	-	2000	5.5 ns	5.5 ns	SMD/SMT	PMOS Switches	-	-	-	-	-	-	MOSFET	-	-	TPS1101	-	TSSOP	-	- 15 V, 2 V	-	-	-	-	-	-	-	-	-	Gull-wing	-	-	-	-	-	1.2 mm	5 mm	1 Channel	710 mW	Si	Texas Instruments	-	MOSFET Small Signal	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPS1100DR Trans MOSFET P-CH 15V 1.6A 8-Pin SOIC T/R MOSFET Single P-Ch Enh-Mode MOSFET MOSFET P-CH 15V 1.6A 8-SOIC texas instruments	10	2500: ¥3.5972	Tape & Reel	RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	791mW	P-Channel	1	1.5V @ 250µA	400@4.5V mOhm	15 V	400@4.5V	5.45nC @ 10V	15V	1.6A (Ta)	Reel	Surface Mount	8SOIC	8	8-SOIC	P	Single Quad Drain Triple Source	-40 to 125 °C	Compliant	2 ns	13 ns	15 V	791	10 ns	4.5 ns	1.6 A	4(Max)	0.002677 oz	5(Max)	SOIC	1.5(Max)	8	-	791 mW	1.6 A	-	-	-	-	-	2500	10 ns	10 ns	SMD/SMT	-	-	-	-	-	-	-	MOSFET	-	-	TPS1100	-	SOIC	-	- 15 V, 2 V	-	-	-	-	-	-	-	-	-	Gull-wing	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2 TPS1120DG4 Trans MOSFET P-CH 15V 1.17A 8-Pin SOIC Tube MOSFET 2P-CH 15V 1.17A 8-SOIC TPS1120DG4, Dual P-channel MOSFET Transistor 1.17A 15V, 8-Pin SOIC MOSFET Dual P-Ch Enh-Mode MOSFET texas instruments	10	75: ¥9.248	Rail / Tube	Lead free / RoHS Compliant	2 P-Channel (Dual)	2 V	Logic Level Gate	840mW	P-Channel	2	1.5V @ 250µA	400@4.5V mOhm	15 V	0.4 Ω	5.45nC @ 10V	15V	1.17A	Tube	Surface Mount	8SOIC	8	8-SOIC	P	Dual, Dual Drain	-40 to 125 °C	Compliant	2 ns	13 ns	15 V	0.84 W	10 ns	4.5 ns	1.17 A	3.91mm	0.002677 oz	5(Max)	SOIC	1.5(Max)	8	-	0.84 W	- 2.7 V	-	-	-	-	-	75	10 ns	10 ns	SMD/SMT	Small Signal	-	-	-	-	-	-	MOSFET	No	SOIC	TPS1120	-	SOIC	-	+ 2 V, - 15 V	P	-	-	-	-	-	-	-	-	Gull-wing	-	-	-	-	-	1.58mm	4.9mm	-	-	-	-	2.5 S	-	-	-	4.9 x 3.91 x 1.58mm	-	-	-	-	-	-	-	-	-	-	Small Signal	-	-
TPS1101PWRG4 Trans MOSFET P-CH 15V 2.18A 16-Pin TSSOP T/R MOSFET P-CH 15V 2.18A 16-TSSOP MOSFET Single P-Ch Enh-Mode MOSFET texas instruments	10	2000: ¥5.7392	Tape & Reel	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	710mW	P-Channel	1	1.5V @ 250µA	90(Typ)@10V mOhm	15 V	0.09 ohm	11.25nC @ 10V	15V	2.18A (Ta)	Tape and Reel	Surface Mount	16TSSOP	16	16-TSSOP	P	Single Hex Drain Quint Source	-40 to 125 °C	Compliant	13 ns	19 ns	15 V	710	5.5 ns	6.5 ns	2.18 A	4.5(Max)	0.002183 oz	5.1(Max)	TSSOP	1.05(Max)	16	-	710 mW	2.18 A	-	-	-	-	-	2000	5.5 ns	5.5 ns	SMD/SMT	Small Signal	-	-	-	-	-	-	MOSFET	No	TSSOP	TPS1101	-	TSSOP	-	- 15 V, 2 V	P	-	-	-	-	-	-	-	-	Gull-wing	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 CSD16321Q5 Trans MOSFET N-CH 25V 31A 8-Pin SON T/R MOSFET N-CH 25V 100A 8-SON MOSFET N-Channel NexFET Power MOSFET MOSFET, N CH, 25V, 100A, 8SON N-Channel NexFET Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 100 A, Vds=25 V, 8针 SON封装 texas instruments	10113	1: ¥10.948	Cut Tape, Tape & Reel	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	3.1W	N-Channel	1	1.4V @ 250µA	2.4@8V mOhm	25 V	2.4@8V	19nC @ 4.5V	25V	31A (Ta), 100A (Tc)	Tape and Reel	Surface Mount	8SON	8	8-SON	Enhancement	Single Quad Drain Triple Source	-55 to 150 °C	Compliant	17 ns	27 ns	25 V	:3.1W	15 ns	9 ns	31 A	6	0.0001	5	SON	1	8	296-24517-2	3.1 W	31 A	ACTIVE	3100pF @ 12.5V	SLPS220B	View	-55 to 150	2500	17 ns	15 ns	SMD/SMT	-	85423990	:1.1V	:100A	:2.1mohm	200	2.5	MOSFET	-	-	CSD16321Q5	Y	SON	Yes	- 8 V, + 10 V	-	:8	:No SVHC (16-Dec-2013)	:MSL 1 - Unlimited	-	-	-	-	-	No Lead	NexFET	-	:25V	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
3 TPS1101DR Trans MOSFET P-CH 15V 2.3A 8-Pin SOIC T/R MOSFET P-CH 15V 2.3A 8-SOIC MOSFET Single P-Ch Enh-Mode MOSFET texas instruments	423	1: ¥14.212	Tape & Reel	Lead free / RoHS Compliant	MOSFET P-Channel, Metal Oxide	2 V	Logic Level Gate	791mW	P-Channel	1	1.5V @ 250µA	90(Typ)@10V mOhm	15 V	0.09 ohm	11.25nC @ 10V	15V	2.3A (Ta)	Tape and Reel	Surface Mount	8SOIC	8	8-SOIC	P	Single Quad Drain Triple Source	-40 to 125 °C	Compliant	13 ns	19 ns	15 V	791	5.5 ns	6.5 ns	2.3 A	4(Max)	0.002677 oz	5(Max)	SOIC	1.5(Max)	8	-	791 mW	2.3 A	-	-	-	-	-	2500	5.5 ns	5.5 ns	SMD/SMT	Small Signal	-	-	-	-	-	-	MOSFET	No	SOIC	TPS1101	-	SOIC	-	- 15 V, 2 V	P	-	-	-	Not Required dB	Not Required dB	Not Required MHz	2.3 A	Not Required %	Gull-wing	-	-	-	-	-	1.75 mm	4.9 mm	1 Channel	791 mW	Si	Texas Instruments	-	MOSFET Small Signal	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 CSD17313Q2 Trans MOSFET N-CH 30V 5A 6-Pin SON T/R MOSFET N-CH 30V 5A 6SON MOSFET Transistor 30V N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 5 A, Vds=30 V, 6针 SON封装 MOSFET 30V N Channel NexFET Power MOSFET texas instruments	3937	1: ¥0.9604	Tape & Reel, Cut Tape	Lead free / RoHS Compliant	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	2.3W	:N Channel	1	1.8V @ 250µA	30@8V mOhm	30	30@8V	2.7nC @ 4.5V	30V	5A (Tc)	Tape and Reel	Surface Mount	6SON	6	6-SON (2x2)	Enhancement	Single	-55 to 150 °C	Compliant	1.3 ns	4.2 ns	30 V	:2.3W	3.9 ns	2.8 ns	5 A	2	0.00001	2	SON	0.75(Max)	6	296-27233-2	-	-	ACTIVE	340pF @ 15V	SLPS260D	View	-55 to 150	-	-	-	-	-	85412100	:1.3V	Catalog	:26mohm	20	0.4	-	-	-	-	Y	SON	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	alt_slps260d.gif	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 CSD16325Q5 Trans MOSFET N-CH 25V 33A 8-Pin SON EP T/R MOSFET N-Channel NexFET Power MOSFET MOSFET N-CH 25V 5X6 100A 8SON MOSFET, N CH, 25V, 100A, 8SON N-Channel NexFET™ Power MOSFET texas instruments	2480	7: ¥6.6701	Cut Tape, Tape & Reel	RoHS Compliant	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	3.1W	N-Channel	1	1.4V @ 250µA	2@8V mOhm	25	2@8V	25nC @ 4.5V	25V	33A (Ta), 100A (Tc)	Reel	Surface Mount	8SON EP	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	12 ns	32 ns	25 V	:3.1W	16 ns	10.5 ns	33 A	6.1(Max)	0.0035	5.1(Max)	SON EP	1.05(Max)	8	296-24964-2	3.1 W	33 A	ACTIVE	4000pF @ 12.5V	SLPS218C	View	-55 to 150	2500	12 ns	16 ns	SMD/SMT	-	85412900	:1.1V	:100A	:1.7mohm	200	3.5	MOSFET	-	-	-	Y	-	Yes	-	-	:8	:No SVHC (20-Jun-2013)	:MSL 1 - Unlimited	-	-	-	-	-	-	NexFET	-	:25V	:SMD	-	-	-	-	-	-	-	-	-	159 S	18 nC	-	-	-	-	-	-	-	-	-	-	-	-	:16325	-
6 CSD16323Q3 Trans MOSFET N-CH 25V 21A 8-Pin SON EP MOSFET N-CH 25V 3.3X3.3 8-SON MOSFET, N CH, 25V, 60A, 8SON N-Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 60 A, Vds=25 V, 8针 SON封装 MOSFET N-Ch NexFET Pwr MOSFET texas instruments	10	1: ¥3.024	Tape & Reel	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	3W	:N Channel	1	1.4V @ 250µA	4.5@8V mOhm	25	4.5@8V	8.4nC @ 4.5V	25V	21A (Ta), 60A (Tc)	Tape & Reel (TR)	Surface Mount	8SON EP	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	6.3 ns	13 ns	25 V	:3W	15 ns	5.3 ns	21 A	3.3	0.0001	3.3	SON EP	1	8	296-24522-2	-	-	ACTIVE	1300pF @ 12.5V	SLPS224B	View	-55 to 150	-	-	-	-	-	85412900	:1.1V	:60A	:4.4mohm	112	1.1	-	-	-	-	Y	-	Yes	-	-	:8	:No SVHC (20-Jun-2013)	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	:25V	:SMD	alt_slps224b.gif	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
7 CSD17308Q3 Trans MOSFET N-CH 30V 47A 8-Pin SON EP T/R MOSFET N-CH 30V 47A 8SON MOSFET 30V NCh NexFET Pwr MOSFET MOSFET, N CH, 30V, 47A, 8SON 30V N-Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 47 A, Vds=30 V, 8针 SON封装 texas instruments	120	1: ¥1.0391	Cut Tape	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	10 V	Standard	2.7W	N-Channel	1	1.8V @ 250µA	10.3@8V mOhm	30 V	10.3@8V	5.1nC @ 4.5V	30V	13A (Ta), 47A (Tc)	Tape and Reel	Surface Mount	8SON EP	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	2.3 ns	9.9 ns	30 V	:2.7W	5.7 ns	4.5 ns	47 A	3.3	0.0035	3.3	SON EP	1	8	296-27210-2	2.7 W	47 A	ACTIVE	700pF @ 15V	SLPS262A	View	-55 to 150	2500	2.3 ns	5.7 ns	SMD/SMT	Power MOSFET	85412900	:1.3V	Catalog	:0.0094ohm	78	0.8	MOSFET	No	SON EP	CSD17308Q3	Y	-	Yes	10 V	N	:8	:No SVHC (16-Dec-2013)	:MSL 1 - Unlimited	-	-	-	-	-	-	NexFET	-	-	-	-	-	-	-	-	-	-	37 S	-	-	3.9 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 CSD16340Q3 Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R MOSFET N-CH 25V 60A 8SON MOSFET, N CH, 25V, 21A, 8SON 25V, N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 60 A, Vds=25 V, 8针 SON封装 MOSFET N Channel NexFET Power MOSFET texas instruments	5895	1: ¥6.384	Cut Tape, Tape & Reel	Contains lead / RoHS non-compliant	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	3W	:N Channel	1	1.1V @ 250µA	4.5@8V mOhm	25 V	4.5@8V	9.2nC @ 4.5V	25V	21A (Ta), 60A (Tc)	Tape and Reel	Surface Mount	8SON EP	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	5.2 ns	13.8 ns	25 V	:3W	16.1 ns	4.8 ns	21 A	3.3	0.0001	3.3	SON EP	1	8	296-25646-2	3 W	21 A	ACTIVE	1350pF @ 12.5V	SLPS247E	View	-55 to 150	-	-	-	-	Power MOSFET	85412900	:850mV	:60A	:3.8mohm	115	1.2	-	No	SON EP	-	Y	-	Yes	-	N	:8	:No SVHC (20-Jun-2013)	:MSL 1 - Unlimited	Not Required dB	Not Required dB	Not Required MHz	21 A	Not Required %	-	-	Compliant	-	-	fbd_slps247e.gif	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
5 CSD16410Q5A Trans MOSFET N-CH 25V 16A 8-Pin SON EP T/R MOSFET N-Ch NexFET Power MOSFETs MOSFET N-CH 25V 59A 8-SON FET, N CH, SINGLE, 25V, 8SON N-Channel NexFET Power MOSFET texas instruments	1340	20: ¥2.225	Tape & Reel	RoHS Compliant	MOSFET N-Channel, Metal Oxide	16 V	Logic Level Gate	3W	N-Channel	1	2.3V @ 250µA	8.5@10V mOhm	25 V	0.0085 ohm	5nC @ 4.5V	25V	16A (Ta), 59A (Tc)	Reel	Surface Mount	8SON EP	8	8-SON (5x6)	Enhancement	Single Quad Drain Triple Source	-55 to 150 °C	Compliant	3.6 ns	6.5 ns	25 V	:3W	10.7 ns	6.2 ns	16 A	5.75	0.0001	4.9	SON EP	1	8	296-24254-2	3 W	59 A	ACTIVE	740pF @ 12.5V	SLPS205A	View	-55 to 150	2500	3.6 ns	10.7 ns	SMD/SMT	Power MOSFET	85423190	:1.9V	:59A	:6.8mohm	158	1.1	MOSFET	No	SON EP	CSD16410Q5A	Y	-	Yes	- 12 V, + 16 V	N	:8	:No SVHC (16-Dec-2013)	:MSL 1 - Unlimited	Not Required dB	Not Required dB	Not Required MHz	16 A	Not Required %	-	NexFET	Compliant	:25V	:SMD	-	-	-	-	-	-	-	38 S	-	38 S	3.9 nC	-	-	-	-	-	-	-	-	-	-	-	-	-	New Technology: Cutting edge technology for the newest designs.
5 CSD16414Q5 Trans MOSFET N-CH 25V 34A 8-Pin SON EP T/R MOSFET N-CH 25V 100A 8-SON FET, N CH, SINGLE, 25V, 8SON N-Channel NexFET Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 100 A, Vds=25 V, 8针 SON封装 MOSFET N-Ch NexFET Power MOSFETs texas instruments	2437	1: ¥13.192	Tape & Reel	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	16 V	Logic Level Gate	3.2W	:N Channel	1	2V @ 250µA	1.9@10V mOhm	25	1.9@10V	21nC @ 4.5V	25V	34A (Ta), 100A (Tc)	Tape and Reel	Surface Mount	8SON EP	8	8-SON	Enhancement	Single	-55 to 150 °C	Compliant	11.1 ns	18.4 ns	25 V	:3.2W	24 ns	15 ns	34 A	6	0.0001	5	SON EP	1	8	296-24257-2	-	-	ACTIVE	3650pF @ 12.5V	SLPS208A	View	-55 to 150	-	-	-	-	-	85423190	:1.6V	:100A	:1.5mohm	213	4.4	-	-	-	-	Y	-	Yes	-	-	:8	:No SVHC (16-Dec-2013)	:MSL 1 - Unlimited	-	-	-	-	-	-	-	-	:25V	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
6 CSD17301Q5A Trans MOSFET N-CH 30V 28A 8-Pin SON EP T/R MOSFET N-CH 30V 28A 8SON MOSFET, N CH, 30V, 100A, 8SON 30V N Channel NexFET™ Power MOSFET Texas Instruments , N沟道 MOSFET 晶体管, 100 A, Vds=30 V, 8针 SON封装 MOSFET 30V N Channel NexFET Pwr MOSFET texas instruments	1987	10: ¥4.8219	2,500	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	10 V	Logic Level Gate	3.2W	:N Channel	1	1.55V @ 250µA	2.6@8V mOhm	30 V	2.6@8V	25nC @ 4.5V	30V	28A (Ta), 100A (Tc)	Tape and Reel	Surface Mount	8SON EP	8	8-SON (5x6)	Enhancement	Single	-55 to 150 °C	Compliant	10.5 ns	28 ns	30 V	:3.2W	16.2 ns	10.7 ns	28 A	5.75	0.0001	4.9	SON EP	1	8	296-25795-2	3.2 W	28 A	ACTIVE	3480pF @ 15V	SLPS215C	View	-55 to 150	-	-	-	-	Power MOSFET	85412900	:1.1V	:100A	:2mohm	181	4.3	-	No	SON EP	-	Y	-	Yes	-	N	:8	:No SVHC (20-Jun-2013)	:MSL 1 - Unlimited	Not Required dB	Not Required dB	Not Required MHz	28 A	Not Required %	-	-	Compliant	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
4 CSD16404Q5A Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R MOSFET N-CH 25V 81A 8-SON FET, N CH, SINGLE, 25V, 8SON N-Channel NexFET Power MOSFET MOSFET N-Ch NexFET Power MOSFETs texas instruments	1367	1: ¥4.2105	Tape & Reel	Contains lead / RoHS compliant by exemption	MOSFET N-Channel, Metal Oxide	16 V	Standard	3W	:N Channel	1	2.1V @ 250µA	5.1@10V mOhm	25 V	0.0051 ohm	8.5nC @ 4.5V	25V	21A (Ta), 81A (Tc)	Tape and Reel	Surface Mount	8SON EP	8	8-SON (5x6)	Enhancement	Single	-55 to 150 °C	Compliant	4.6 ns	8.4 ns	25 V	:3W	13.4 ns	7.8 ns	21 A	5.75	0.0001	4.9	SON EP	1	8	296-24250-2	3 W	21 A	ACTIVE	1220pF @ 12.5V	SLPS198B	View	-55 to 150	-	-	-	-	Power MOSFET	85423190	:1.8V	:81A	:4.1mohm	135	1.7	-	No	SON EP	-	Y	-	Yes	-	N	:8	:No SVHC (16-Dec-2013)	:MSL 1 - Unlimited	Not Required dB	Not Required dB	Not Required MHz	21 A	Not Required %	-	-	Compliant	:25V	:SMD	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Texas Instruments Incorporated- IGBTs

IGBTs - 型号列表

On-State Resistance (Max)

Current - Continuous Drain (Id) @ 25degC

Other Names

Gate Charge (Qg) (Max) @ Vgs

Current - Peak Pulse (10/1000us)

Fall Time (Typ)

Rds On (Max) @ Id, Vgs

Switch Time (Ton, Toff) (Max)

Input Capacitance (Ciss) (Max) @ Vds

Software

Delay to 1st Tap

Propagation Delay (Max)

Current - Drain (Idss) @ Vds (Vgs=0)

Resistance - RDS(On)

Power - Max

Vgs(th) (Max) @ Id

Power Dissipation (Max)

Other Specifications

Current - Peak Pulse (8/20us)

Width

Power - Rated

Rise Time (Typ)

Series

Voltage - Threshold

Fall Time

Standard Package

Vce(on) (Max) @ Vge, Ic

Weight

Length - Overall

Current Drain (Id) - Max

Voltage - Gate Trigger (Vgt) (Max)

Transistor Type

Current Rating (Max)

Package / Case

Supplier Device Package

Configuration

Functional Diagram

RoHS

Tariff No

FET Type

Vgs (Max)

Packaging

Package Quantity

Shell Size - Insert

Package Cooled

Type

Power - Average Forward

Height

Length

Standard Package Name

Voltage - Breakdown

Drain to Source Voltage (Vdss)

Number of Positions

Channel Type

Printed Circuit Board

Operating Temperature

Factory Pack Quantity

Current Transfer Ratio (Min)

DC Resistance (DCR) - Primary

FET Feature

Number of Elements

Polarity

Number of Channels

Number of Pins

Size / Dimension

Lead Style

SVHC

Gate Charge